BUP300 [INFINEON]
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated); IGBT （低正向压降高开关速度低尾电流闭锁免费额定雪崩）
| 型号： | BUP300 |
| 厂家： | 
Infineon |
| 描述： | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) |
| 文件： | 总7页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 300
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
Package
Ordering Code
C
BUP 300
1200V 3.6A TO-218 AB
Q67078-A4203-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
1200
V
CE
V
CGR
Ω
R
= 20 k
1200
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
A
C
T = 25 °C
3.6
2.4
C
T = 90 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
7.2
4.8
C
T = 90 °C
C
Avalanche energy, single pulse
E
AS
P
tot
mJ
W
Ω
I = 1.5 A, V = 50 V, R = 25
C
CC
GE
L = 3.3 mH, T = 25 °C
3.5
40
j
Power dissipation
T = 25 °C
C
Chip or operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Semiconductor Group
1
Jul-30-1996
BUP 300
Maximum Ratings
Parameter
Symbol
Values
E
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
-
55 / 150 / 56
Thermal Resistance
≤
Thermal resistance, chip case
R
thJC
3.1
K/W
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
GE
= V
I = 0.1 mA
CE, C
4.5
5.5
6.5
Collector-emitter saturation voltage
CE(sat)
V
GE
V
GE
V
GE
= 15 V, I = 1.5 A, T = 25 °C
-
-
-
2.8
3.8
4
3.3
4.3
4.5
C
j
= 15 V, I = 1.5 A, T = 125 °C
C
j
= 15 V, I = 1.5 A, T = 150 °C
C
j
Zero gate voltage collector current
I
I
µA
nA
CES
GES
V
= 1000 V, V = 0 V, T = 25 °C
-
-
1
-
25
CE
CE
GE
j
V
= 1000 V, V = 0 V, T = 125 °C
100
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
V
GE
-
0.1
100
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 1.5 A
-
-
-
-
0.6
225
25
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
CE
320
40
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
13
24
GE
Semiconductor Group
2
Jul-30-1996
BUP 300
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 600 V, V = 15 V, I = 1.5 A
t
t
t
t
ns
d(on)
V
CC
GE
C
Ω
R
Gon
= 100
-
-
-
-
-
30
50
30
250
25
-
Rise time
= 600 V, V = 15 V, I = 1.5 A
r
V
CC
GE
C
R
Gon
= 100 Ω
20
Turn-off delay time
= 600 V, V = -15 V, I = 1.5 A
d(off)
V
CC
GE
C
R
Goff
= 100 Ω
170
15
Fall time
= 600 V, V = -15 V, I = 1.5 A
f
V
CC
GE
C
R
Goff
= 100 Ω
Total turn-off loss energy
= 600 V, V = -15 V, I = 1.5 A
E
mWs
off
V
CC
GE
C
R
Goff
= 100 Ω
0.25
Semiconductor Group
3
Jul-30-1996
BUP 300
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
45
W
4.5
A
Ptot
35
IC
3.5
30
25
20
15
10
3.0
2.5
2.0
1.5
1.0
5
0
0.5
0.0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 1
10 1
t
= 4.5µs
10 µs
p
A
K/W
IC
ZthJC
100 µs
1 ms
10 0
10 -1
10 -2
10 0
D = 0.50
0.20
10 ms
10 -1
0.10
0.05
0.02
single pulse
0.01
DC
10 -2
10 -5
10 0
10 1
10 2
10 3
V
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Jul-30-1996
BUP 300
Typ. output characteristics
I = f(V
Typ. transfer characteristics
I = f (V
)
CE
)
GE
C
C
parameter: t = 80 µs, T = 125 °C
parameter: t = 80 µs, V = 20 V, T = 25 °C
P CE j
p
j
Typ. saturation characteristics
= f (V
Typ. saturation characteristics
VCE(sat) = f (V )
V
)
CE(sat)
GE
GE
parameter: T = 25 °C
parameter: T = 125 °C
j
j
Semiconductor Group
5
Jul-30-1996
BUP 300
Typ. capacitances
C = f (V
Typ. gate charge
)
ƒ
V
= (Q
)
CE
GE
Gate
parameter: V = 0 V, f = 1 MHz
parameter: I
= 1 A
GE
C puls
20
V
16
VGE
14
12
10
8
400 V
800 V
6
4
2
0
0
4
8
12
16
20
24
32
QGate
Semiconductor Group
6
Jul-30-1996
BUP 300
Package Outlines
Dimensions in mm
Weight: 8 g
Semiconductor Group
7
Jul-30-1996
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