IXBH20N360HV [IXYS]
Insulated Gate Bipolar Transistor;
| 型号： | IXBH20N360HV |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 3600V
IC110 = 20A
VCE(sat) 3.4V
IXBT20N360HV
IXBH20N360HV
TO-268HV (IXBT)
Symbol
VCES
Test Conditions
Maximum Ratings
G
TJ = 25°C to 150°C
3600
3600
V
V
E
C (Tab)
VCGR
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
TO-247HV (IXBH)
IC25
IC110
ICM
TC = 25°C
70
20
A
A
A
TC = 110°C
TC = 25°C, 1ms
220
G
E
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10
Clamped Inductive Load
ICM = 160
VCES 1500
A
V
C (Tab)
C
TSC
(SCSOA)
VGE = 15V, TJ = 125°C,
RG = 52, VCE =1500V, Non-Repetitive
G = Gate
E = Emitter
C
= Collector
10
μs
Tab = Collector
PC
TC = 25°C
430
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
High Voltage Packages
High Blocking Voltage
Md
Mounting Torque (TO-247HV)
1.13/10
Nm/lb.in
High Peak Current Capability
Low Saturation Voltage
Weight
TO-268HV
TO-247HV
4
6
g
g
Advantages
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Low Gate Drive Requirement
High Power Density
Min.
3600
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
5.0
Applications
25 μA
500 μA
TJ = 125°C
TJ = 125°C
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = 20A, VGE = 15V, Note 1
2.9
3.6
3.4
V
V
© 2014 IXYS CORPORATION, All Rights Reserved
DS100643(12/14)
1
IXBT20N360HV
IXBH20N360HV
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-268HV Outline
Min.
Typ.
Max.
E
A
E1
L2
C2
gfs
IC = 20A, VCE = 10V, Note 1
10
17
S
3
D1
3
D
H
D2
Cies
Coes
Cres
2045
110
50
pF
pF
pF
1
2
D3
2
1
VCE = 25V, VGE = 0V, f = 1MHz
A1
L4
C
e
e
b
Qg(on)
Qge
Qgc
110
13
nC
nC
nC
PINS:
1 - Gate 2 - Emitter
3 - Collector
IC = 20A, VGE = 15V, VCE = 1000V
43
L3
A2
td(on)
tri
Eon
td(off)
tfi
18
14
ns
ns
L
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
15.50
238
mJ
ns
VCE = 1500V, RG = 10
206
ns
Note 2
Eof
4.30
mJ
f
td(on)
tri
Eon
td(off)
tfi
20
22
ns
ns
Inductive load, TJ = 125°C
IC = 20A, VGE = 15V
16.10
247
mJ
ns
VCE = 1500V, RG = 10
216
ns
Note 2
Eoff
4.15
mJ
td(on)
tr
td(off)
tf
30
ns
ns
Resistive load, TJ = 25°C
325
IC = 20A, VGE = 15V
TO-247HV Outline
165
ns
ns
E1
E
A
VCE = 960V, RG = 10
R
0P
0P1
A2
1045
Q
S
D1
D2
td(on)
tr
td(off)
tf
32
ns
ns
D
4
Resistive load, TJ = 125°C
890
IC = 20A, VGE = 15V
1
2
3
185
ns
ns
L1
A3
2X
D3
VCE = 960V, RG = 10
E2
E3
4X
1100
A1
L
RthJC
RthCS
0.29°C/W
°C/W
e
b
b1
c
e1
3X
3X
TO-247HV
0.21
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max
VF
IF = 20A, VGE = 0V, Note 1
3.5
V
trr
1.7
35
30
μs
A
IF = 10A, VGE = 0V, -diF/dt = 100A/μs
IRM
QRM
VR = 100V, VGE = 0V
μC
Note: 1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCETECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to
change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBT20N360HV
IXBH20N360HV
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
40
35
30
25
20
15
10
5
V
= 25V
GE
V
= 25V
GE
17V
15V
240
200
160
120
80
19V
15V
13V
11V
21V
19V
9V
13V
11V
7V
9V
7V
40
6V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
40
35
30
25
20
15
10
5
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
= 25V
GE
21V
17V
15V
13V
11V
V
= 15V
GE
9V
I
= 40A
C
I
= 20A
C
7V
I
= 10A
C
6V
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
8
7
6
5
4
3
2
60
50
40
30
20
10
0
T
J
= 25ºC
I
= 40A
20A
C
T
J
= 125ºC
25ºC
- 40ºC
10A
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
6
7
8
9
10
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXBT20N360HV
IXBH20N360HV
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
30
25
20
15
10
5
T
J
= - 40ºC
VCE = 1000V
IC = 20A
I
G = 10mA
25ºC
125ºC
6
4
2
0
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
90
100
110
IC - Amperes
QG - NanoCoulombs
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Capacitance
60
50
40
30
20
10
0
10,000
1,000
100
= 1 MHz
f
T
= 25ºC
125ºC
J
J
C
C
ies
V
= 0V
GE
oes
V
= 15V
GE
C
res
10
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
35
40
VCE - Volts
VF - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Reverse-Bias Safe Operating Area
1
180
160
140
120
100
80
0.1
60
0.01
0.001
T
= 125ºC
J
40
R
= 10Ω
G
20
dv / dt < 10V / ns
0
200
600
1000
1400
1800
2200
2600
3000
3400
0.00001
0.0001
0.001
0.01
0.1
1
10
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
Pulse Width - Seconds
IXBT20N360HV
IXBH20N360HV
Fig. 13. Forward-Bias Safe Operating Area @ T = 25ºC
Fig. 14. Forward-Bias Safe Operating Area @ T = 75ºC
C
C
1000
100
10
1000
100
10
V
Limit
V
Limit
CE(sat)
CE(sat)
25µs
25µs
100µs
100µs
1
1
1ms
1ms
T
= 150ºC
T
= 150ºC
J
J
0.1
0.01
0.1
0.01
10ms
T
= 75ºC
T
= 25ºC
C
C
10ms
DC
100ms
Single Pulse
10
Single Pulse
10
100ms
DC
1,000
1
100
1,000
10,000
1
100
10,000
VCE - Volts
VCE - Volts
Fig. 16. Inductive Switching Energy Loss vs.
Collector Current
Fig. 15. Inductive Switching Energy Loss vs.
Gate Resistance
14
12
10
8
56
48
40
32
24
16
8
18
16
14
12
10
8
46
42
38
34
30
26
22
18
14
10
E
E
on - - - -
off
E
E
on - - - -
off
T
= 125ºC , V = 15V
GE
J
T
= 125ºC , V = 15V
GE
J
V
= 1500V
CE
V
= 1500V
CE
I
= 40A
C
T
J
= 125ºC
6
T
J
= 25ºC
6
4
4
2
I
= 20A
40
C
2
0
0
0
10
15
20
25
30
35
45
50
10
15
20
25
30
35
40
RG - Ohms
IC - Amperes
Fig. 18. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 17. Inductive Switching Energy Loss vs.
Junction Temperature
420
380
340
300
260
220
180
140
100
900
800
700
600
500
400
300
200
100
16
14
12
10
8
40
36
32
28
24
20
16
12
8
E
E
on - - - -
t f i
t
d(off) - - - -
off
G
R
= 10Ω , V = 15V
GE
T
J
= 125ºC,
= 15V
VGE
V
= 1500V
CE
= 1500V
VCE
I
= 40A
C
I
= 40A
C
I
= 20A
C
6
4
I
= 20A
105
C
2
0
25
35
45
55
65
75
85
95
115
125
10
15
20
25
30
35
40
45
50
RG - Ohms
TJ - Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
IXBT20N360HV
IXBH20N360HV
Fig. 20. Inductive Turn-off Switching Times vs.
Fig. 19. Inductive Turn-off Switching Times vs.
Collector Current
Junction Temperature
t
d(off) - - - -
400
360
320
280
240
200
160
120
280
270
260
250
240
230
220
210
400
360
320
280
240
200
160
120
80
280
270
260
250
240
230
220
210
200
t f i
t
d(off) - - - -
t f i
R
G
= 10Ω , V = 15V
R
G
= 10Ω , V = 15V
GE
GE
V
= 1500V
V
= 1500V
CE
CE
I
= 40A
C
T
J
= 125ºC
I
= 20A
C
T
J
= 25ºC
I
= 40A
55
C
25
35
45
65
75
85
95
105
115
125
10
15
20
25
30
35
40
IC - Amperes
TJ - Degrees Centigrade
Fig. 22. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 21. Inductive Turn-on Switching Times vs.
Gate Resistance
60
50
40
30
20
10
0
34
30
26
22
18
14
10
120
100
80
60
40
20
0
70
60
50
40
30
20
10
t r i
t d(on)
- - - -
t r i
t
d(on) - - - -
R
G
= 10Ω , V = 15V
GE
T
J
= 125ºC, V = 15V
GE
V
= 1500V
CE
V
= 1500V
CE
I
= 40A
C
T
J
= 125ºC
I
= 20A
C
T
J
= 25ºC
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
RG - Ohms
IC - Amperes
Fig. 23. Inductive Turn-on Switching Times vs.
Junction Temperature
70
60
50
40
30
20
10
0
31
28
25
22
19
16
13
10
t r i
t d(on)
- - - -
R
G
= 10Ω , V = 15V
GE
V
= 1500V
CE
I
C
= 40A
I
C
= 20A
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: B_20N360(H7-B11)12-12-14-A
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