IXFK250N10P [IXYS]
Polar HiPerFET Power MOSFET; 极地HiPerFET功率MOSFET
| 型号： | IXFK250N10P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM HiPerFETTM
Power MOSFET
VDSS = 100V
ID25 = 250A
RDS(on) ≤ 6.5mΩ
IXFK250N10P
IXFX250N10P
trr
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
G
D
S
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
100
100
V
V
Tab
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
PLUS247 (IXFX)
ID25
ILRMS
IDM
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
250
160
700
A
A
A
TC = 25°C, Pulse Width Limited by TJM
IA
TC = 25°C
TC = 25°C
125
3
A
J
G
D
S
Tab
EAS
PD
TC = 25°C
1250
20
W
G = Gate
S = Source
D
= Drain
Tab = Drain
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
V/ns
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z Dynamic dv/dt Rating
z Avalanche Rated
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
z Fast Intrinsic Diode
z Low QG and RDS(on)
20..120 /4.5..27
z Low Package Inductance
Weight
TO-264
PLUS247
10
6
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
z
Easy to Mount
Space Savings
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
100
V
V
3.0
5.0
Applications
z DC-DC Converters
z Battery Chargers
± 200 nA
50 μA
IDSS
z Switch-Mode and Resonant-Mode
Power Supplies
TJ = 150°C
1
mA
z Uninterrupted Power Supplies
z AC Motor Drives
RDS(on)
VGS = 10V, ID = 50A, Note 1
6.5 mΩ
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100021A(6/10)
IXFK250N10P
IXFX250N10P
Symbol
Test Conditions
Characteristic Values
TO-264 Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
50
83
S
Ciss
Coss
Crss
16
4470
290
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
25
30
50
18
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter
Inches
Min. Max.
Dim.
Min.
Max.
Qg(on)
Qgs
205
77
nC
nC
nC
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Qgd
80
RthJC
RthCS
0.12 °C/W
°C/W
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
25.91 26.16
0.15
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
250
750
1.3
PLUS247TM Outline
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
trr
200
ns
μC
A
IF = 125A, -di/dt = 100A/μs
QRM
IRM
0.7
VR = 50V, VGS = 0V
10.4
Terminals: 1 - Gate
2 - Drain
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK250N10P
IXFX250N10P
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
250
225
200
175
150
125
100
75
350
300
250
200
150
100
50
VGS = 15V
VGS = 15V
10V
9V
10V
9V
8V
8V
7V
6V
7V
50
25
6V
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDS - Volts
1
1.1 1.2 1.3 1.4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 125A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
250
225
200
175
150
125
100
75
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 15V
10V
9V
VGS = 10V
8V
I D = 250A
I D = 125A
7V
6V
50
5V
25
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VDS - Volts
2
2.2 2.4 2.6 2.8
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 125A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
180
160
140
120
100
80
TJ = 175ºC
External Lead Current Limit
VGS = 10V
15V - - - -
60
TJ = 25ºC
40
20
0
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXFK250N10P
IXFX250N10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
200
180
160
140
120
100
80
140
120
100
80
TJ = - 40ºC
25ºC
TJ = 150ºC
25ºC
- 40ºC
150ºC
60
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0
20
40
60
80
100
120
140
160
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
350
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
VDS = 50V
I D = 125A
I G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
20
40
60
80
100
120
140
160
180
200
220
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000
100
10
= 1 MHz
f
RDS(on) Limit
C
C
isss
25µs
100µs
External Lead Limit
1ms
oss
10ms
C
rss
TJ = 175ºC
100ms
DC
TC = 25ºC
Single Pulse
10
1
0
5
10
15
20
25
30
35
40
1
10
100
1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK250N10P
IXFX250N10P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXF_250N10P (93)8-04-08
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