IXFK64N60P [IXYS]
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode; N沟道增强模式额定雪崩快速内在二极管
| 型号： | IXFK64N60P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |
| 文件： | 总5页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFK 64N60P
IXFX 64N60P
VDSS
ID25
RDS(on)
=
=
≤
≤
600 V
64 A
96 mΩ
200 ns
N-Channel Enhancement Mode
Avalanche Rated
trr
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
TO-264 (IXFK)
VDSS
VDGR
TJ = 25° C to 150° C
600
600
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
S
(TAB)
ID25
IDM
TC =25° C
64
A
A
TC = 25° C, pulse width limited by TJM
150
IAR
TC =25° C
64
A
PLUS247 (IXFX)
EAR
EAS
TC =25° C
TC =25° C
80
mJ
J
3.5
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 2 Ω
,
20
V/ns
TC =25° C
1040
W
(TAB)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
D
= Drain
S = Source Tab = Drain
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
FC
Mounting force (PLUS247)
Mounting torque (TO-264)
20..120/4.5..25
N/lb
Features
Md
1.13/10 Nm/lb.in.
l
l
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Weight
TO-264
PLUS247
10
6
g
g
l
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
Min. Typ.
(TJ = 25° C, unless otherwise specified)
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = 30 VDC, VDS = 0
600
V
V
Advantages
3.0
5.0
l
Easy to mount
Space savings
200
nA
l
l
High power density
IDSS
VDS = VDSS
VGS = 0 V
25
1000
µA
µA
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
96 mΩ
DS99442E(01/06)
© 2006 IXYS All rights reserved
IXFK 64N60P
IXFX 64N60P
PLUS 247TM Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, Note 1
40
63
S
Ciss
Coss
Crss
12
1150
80
nF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
28
23
79
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
Terminals: 1 - Gate
2 - Drain (Collector)
RG = 1 Ω (External)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
200
70
nC
nC
nC
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
68
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
RthJC
RthCS
0.12 ° C/W
° C/W
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
Symbol
Test Conditions
IS
VGS = 0 V
64
150
1.5
A
TO-264 Outline
ISM
VSD
trr
Repetitive
A
V
IF = IS, VGS = 0 V, Note 1
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.6
6.0
µC
A
Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
0.53
25.91 26.16
0.83
.021
1.020
.780
.033
1.030
.786
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFK 64N60P
IXFX 64N60P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
65
60
55
50
45
40
35
30
25
20
15
10
5
160
140
120
100
80
V
= 10V
V
= 10V
8V
GS
GS
8V
7V
7V
6V
6V
5V
60
40
20
5V
14
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 32A vs.
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
65
60
55
50
45
40
35
30
25
20
15
10
5
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 64A
D
I
= 32A
D
5V
10
0.7
0.4
0
0
2
4
6
8
12
14
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 32A vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
60
50
40
30
20
10
0
3.2
3
V
= 10V
GS
T
J
= 125ºC
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
T
J
= 25ºC
140
0.8
0
20
40
60
80
100
120
160
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
ID - Amperes
© 2006 IXYS All rights reserved
IXFK 64N60P
IXFX 64N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
130
120
110
100
90
80
T
J
= - 40ºC
25ºC
125ºC
70
T
J
= 125ºC
60
25ºC
- 40ºC
50
40
30
20
10
0
3.5
4
4.5
5
5.5
6
6.5
7
0
10
20
30
40
50
60
70
80
90
100
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
V
= 300V
DS
I
I
= 32A
D
G
= 10mA
60
T
J
= 125ºC
40
T
J
= 25ºC
20
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
20
40
60
80
100 120 140 160 180 200
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1,000
100
10
f = 1 MHz
T
T
= 150ºC
= 25ºC
J
C
C
iss
R
Limit
DS(on)
25µs
100µ
1ms
C
C
oss
10ms
DC
rss
30
10
1
0
5
10
15
20
25
35
40
10
100
1000
VDS - Volts
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
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