IXFR24N100 [IXYS]
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface); HiPerFETTM功率MOSFET ISOPLUS247TM （电隔离背面）
| 型号： | IXFR24N100 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface) |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFR 24N100 VDSS = 1000 V
ISOPLUS247TM
ID25
=
22 A
(Electrically Isolated Back Surface)
RDS(on) = 0.39 W
trr £ 250 ns
Single MOSFET Die
ISOPLUS 247TM
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
Isolated back surface*
D = Drain
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
22
96
24
A
A
A
G = Gate
S = Source
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
*Patentpending
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
400
W
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electricalisolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 min
• Fast intrinsic Rectifier
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
1000
2.5
V
5.0 V
±100nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 mA
2 mA
Advantages
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 24A
Note 1
0.39 W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98599(3/99)
1 - 2
IXFR 24N100
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 (IXFR) OUTLINE
VDS = 10 V; ID = 24A
Note 2
15
22
S
Ciss
Coss
Crss
7000
750
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
260
td(on)
tr
td(off)
tf
35
35
75
21
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 24A
RG = 1 W (External),
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Qg(on)
Qgs
250
55
nC
nC
nC
Dim.
Millimeter
Min. Max. Min. Max.
Inches
VGS = 10 V, VDS = 0.5 • VDSS, ID = 24A
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
135
RthJC
RthCK
0.30 K/W
K/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Symbol
TestConditions
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
IS
VGS = 0 V
24
96
A
A
S
T
U
13.21 13.72
15.75 16.26
1.65
.520 .540
.620 .640
.065 .080
ISM
Repetitive;
3.03
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
250 ns
IF = IS,-di/dt = 100 A/ms, VR = 100 V
QRM
IRM
1.0
8
mC
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相关型号：
IXFR24N100Q3
Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明