IXFX48N50Q [IXYS]

; - 12号的铝制车身绘( RAL 7032 )
IXFX48N50Q
型号: IXFX48N50Q
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:


- 12号的铝制车身绘( RAL 7032 )

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HiPerFETTM  
Power MOSFETs  
Q-Class  
VDSS ID25  
RDS(on)  
IXFN 44N50Q  
IXFN 48N50Q  
500 V 44 A 120 mW  
500 V 48 A 100 mW  
trr £ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, High dv/dt  
miniBLOC, SOT-227 B (IXFN)  
E153432  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW  
G
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
D
ID25  
IDM  
IAR  
TC = 25°C  
44N50  
48N50  
44  
48  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25°C, pulse width limited by TJM  
44N50  
48N50  
176  
192  
A
A
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TC = 25°C  
TC = 25°C  
48  
A
Features  
EAR  
EAS  
60  
2.5  
mJ  
mJ  
IXYS advanced low Qg process  
Low gate charge and capacitances  
- easier to drive  
- faster switching  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
UnclampedInductiveSwitching(UIS)  
rated  
PD  
TC = 25°C  
500  
W
TJ  
-55 to +150  
150  
°C  
°C  
°C  
Low RDS (on)  
Fastintrinsicdiode  
Internationalstandardpackage  
miniBLOC withAluminiumnitride  
isolationforlowthermalresistance  
Low terminal inductance (<10 nH) and  
stray capacitance to heatsink (<35pf)  
Molding epoxies meet UL 94 V-0  
flammabilityclassification  
TJM  
Tstg  
VISOL  
-55 to +150  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V~  
V~  
IISOL£ 1 mA  
t = 1 s  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13  
1.5/13  
Nm/lb.in.  
Nm/lb.in.  
Weight  
Symbol  
30  
g
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
DC-DC converters  
Battery chargers  
min.  
typ.  
max.  
Switched-modeandresonant-mode  
powersupplies  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 4 mA  
500  
2.0  
V
V
VGS(th)  
4.0  
DC choppers  
Temperatureandlightingcontrols  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100  
2
mA  
mA  
Advantages  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
44N50  
48N50  
120 mW  
100 mW  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98715(03/30/00)  
1 - 2  
IXFN 44N50Q  
IXFN 48N50Q  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
VDS = 20 V; ID = 0.5 • ID25, pulse test  
30  
45  
S
Ciss  
Coss  
Crss  
6400  
930  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
220  
td(on)  
tr  
td(off)  
tf  
33  
22  
75  
10  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
RG = 4.7 W (External),  
Max.  
A
B
7.80  
8.20 0.307 0.323  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
Qg(on)  
Qgs  
190  
40  
nC  
nC  
nC  
E
F
4.09  
4.29 0.161 0.169  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
14.91 15.11 0.587 0.595  
Qgd  
86  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
J
K
11.68 12.22 0.460 0.481  
RthJC  
RthCK  
0.26 K/W  
K/W  
8.92  
9.60 0.351 0.378  
L
M
0.76  
0.84 0.030 0.033  
0.05  
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
N
O
1.98  
2.13 0.078 0.084  
P
4.95  
5.97 0.195 0.235  
Q
26.54 26.90 1.045 1.059  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
Symbol  
IS  
TestConditions  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
VGS = 0 V  
48  
192  
1.5  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
250 ns  
QRM  
IRM  
IF = IS, -di/dt = 100 A/ms, VR = 100 V  
1.4  
10  
mC  
A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  

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