IXFX48N50Q [IXYS]
; - 12号的铝制车身绘( RAL 7032 )型号: | IXFX48N50Q |
厂家: | IXYS CORPORATION |
描述: |
|
文件: | 总2页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-Class
VDSS ID25
RDS(on)
IXFN 44N50Q
IXFN 48N50Q
500 V 44 A 120 mW
500 V 48 A 100 mW
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
D
ID25
IDM
IAR
TC = 25°C
44N50
48N50
44
48
A
A
G = Gate
S = Source
D = Drain
TC = 25°C, pulse width limited by TJM
44N50
48N50
176
192
A
A
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
TC = 25°C
TC = 25°C
48
A
Features
EAR
EAS
60
2.5
mJ
mJ
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
• UnclampedInductiveSwitching(UIS)
rated
PD
TC = 25°C
500
W
TJ
-55 to +150
150
°C
°C
°C
• Low RDS (on)
• Fastintrinsicdiode
• Internationalstandardpackage
• miniBLOC withAluminiumnitride
isolationforlowthermalresistance
• Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0
flammabilityclassification
TJM
Tstg
VISOL
-55 to +150
50/60 Hz, RMS t = 1 min
2500
3000
V~
V~
IISOL£ 1 mA
t = 1 s
Md
Mountingtorque
Terminalconnectiontorque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
Symbol
30
g
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Applications
• DC-DC converters
• Battery chargers
min.
typ.
max.
• Switched-modeandresonant-mode
powersupplies
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
500
2.0
V
V
VGS(th)
4.0
• DC choppers
• Temperatureandlightingcontrols
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100
2
mA
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
44N50
48N50
120 mW
100 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98715(03/30/00)
1 - 2
IXFN 44N50Q
IXFN 48N50Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
VDS = 20 V; ID = 0.5 • ID25, pulse test
30
45
S
Ciss
Coss
Crss
6400
930
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
220
td(on)
tr
td(off)
tf
33
22
75
10
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
M4 screws (4x) supplied
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
RG = 4.7 W (External),
Max.
A
B
7.80
8.20 0.307 0.323
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
Qg(on)
Qgs
190
40
nC
nC
nC
E
F
4.09
4.29 0.161 0.169
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
14.91 15.11 0.587 0.595
Qgd
86
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
J
K
11.68 12.22 0.460 0.481
RthJC
RthCK
0.26 K/W
K/W
8.92
9.60 0.351 0.378
L
M
0.76
0.84 0.030 0.033
0.05
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
N
O
1.98
2.13 0.078 0.084
P
4.95
5.97 0.195 0.235
Q
26.54 26.90 1.045 1.059
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
Symbol
IS
TestConditions
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
VGS = 0 V
48
192
1.5
A
A
V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
250 ns
QRM
IRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
1.4
10
mC
A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相关型号:
IXFX48N60P
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXYS
©2020 ICPDF网 联系我们和版权申明