IXGA12N100 [IXYS]

IGBT; IGBT


型号：	IXGA12N100
厂家：	IXYS CORPORATION
描述：	IGBT IGBT 晶体晶体管功率控制双极性晶体管栅
文件：	总2页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V_CES

I_C25

V_CE(sat)

IGBT

IXGA/IXGP12N100 1000 V

IXGA/IXGP12N100A 1000 V

24 A

3.5 V

4.0 V

Preliminary Data Sheet

TO-220AB (IXGP)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

TO-263 (IXGA)

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 150 W

Clamped inductive load, L = 300 mH

I_CM= 24

C (TAB)

(RBSOA)

@ 0.8 V_CES

P_C

T_C= 25°C

100

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

• Internationalstandardpackages

JEDEC TO-220AB and TO-263AA

• SecondgenerationHDMOS^TM

process

-55 ... +150

M_d

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4 Nm/lb.in.

0.55/5 Nm/lb.in.

• Low V_CE(sat)

Weight

- forminimumon-stateconduction

losses

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

• MOS Gate turn-on

- drive simplicity

Applications

Symbol

TestConditions

CharacteristicValues

• AC motor speed control

• DC servo and robot drives

• DC choppers

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 3 mA, V_GE= 0 V

1000

2.5

I_C= 250 mA, V_GE= V_GE

5.0

• Uninterruptiblepowersupplies(UPS)

• Switch-modeandresonant-mode

power supplies

I_CES

V_CE= 0.8, V_CES

V_GE= 0 V

T_J= 25°C

250

T_J= 125°C

Advantages

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

• Easy to mount with one screw

• Reduces assembly time and cost

• High power density

V_CE(sat)

I_C= I_CE90, V_GE= 15

12N100

12N100A

3.5

4.0

IXYS reserves the right to change limits, test conditions, and dimensions.

95591A (3/97)

1 - 2

IXGA12N100

IXGP12N100

IXGA12N100A IXGP12N100A

Symbol

TestConditions

CharacteristicValues

TO-220 AB (IXGP) Outline

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

g_fs

I_C= I_C90; V_CE= 10 V,

Pulse test, t £ 300 ms, duty cycle £ 2 %

Q_g

Q_ge

Q_gc

I_C= I_C90, V_GE= 15 V, V_CE= 0.5 V_CES

t_d(on)

t_ri

t_d(off)

t_fi

100

200

Inductive load, T_J= 25°C

I_C= I_C90, V_GE= 15 V, L = 300 mH

850 1000

500 700

800 1000

V_CE= 800 V, R_G= R_off= 120 W

Remarks: Switching times may

increase for V_CE(Clamp) > 0.8 V_CES

higher T_Jor increased R_G

12N100A

12N100

Dim.

Millimeter

Inches

Min. Max.

E_off

12N100A

2.5

12.70 13.97 0.500 0.550

14.73 16.00 0.580 0.630

t_d(on)

t_ri

100

200

1.1

900

950

1250

9.91 10.66 0.390 0.420

3.54

4.08 0.139 0.161

Inductive load, T_J= 125°C

5.85

2.54

6.85 0.230 0.270

3.18 0.100 0.125

I_C= I_C90, V_GE= 15 V, L = 300 mH

E_on

t_d(off)

t_fi

V_CE= 800 V, R_G= R_off= 120 W

Remarks: Switching times may

increase for V_CE(Clamp) > 0.8 V_CES

higher T_Jor increased R_G

1.15

2.79

1.65 0.045 0.065

5.84 0.110 0.230

12N100A

12N100

12N100A

12N100

0.64

1.01 0.025 0.040

2.54 BSC 0.100 BSC

4.32

1.14

4.82 0.170 0.190

1.39 0.045 0.055

E_off

0.35

2.29

0.56 0.014 0.022

2.79 0.090 0.110

R_thJC

R_thCK

1.25 K/W

K/W

0.25

TO-263 AA (IXGA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

4.06

2.03

4.83

2.79

.160 .190

.080 .110

Min. Recommended Footprint

0.51

1.14

0.99

1.40

.020 .039

.045 .055

0.46

1.14

0.74

1.40

.018 .029

.045 .055

8.64

7.11

9.65

8.13

.340 .380

.280 .320

9.65

6.86

2.54

10.29

8.13

BSC

.380 .405

.270 .320

.100 BSC

14.61

2.29

1.02

1.27

15.88

2.79

1.40

1.78

0.38

.575 .625

.090 .110

.040 .055

.050 .070

.015

0.46

0.74

.018 .029

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

2 - 2

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

IXGA12N100 [IXYS]

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