IXGA20N60B [IXYS]
HiPerFASTTM IGBT; HiPerFASTTM IGBT
| 型号： | IXGA20N60B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFASTTM IGBT |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
IXGA 20N60B VCES
IXGP 20N60B IC25
= 600 V
= 40 A
VCE(sat)typ = 1.7 V
tfi
= 100 ns
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
TO-220AB (IXGP)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
40
20
80
A
A
A
TC = 90°C
TO-263 AA (IXGA)
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 100 mH
ICM = 40
@ 0.8 VCES
A
G
E
C (TAB)
PC
TC = 25°C
150
W
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
· Internationalstandardpackages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
Md
Mountingtorque(TO-220)
M3
0.45/4 Nm/lb.in.
M3.5 0.55/5 Nm/lb.in.
· High frequency IGBT
Weight
TO-220
TO-263
4
2
g
g
· Highcurrenthandlingcapability
· HiPerFASTTM HDMOSTM process
· MOS Gate turn-on
- drive simplicity
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
· Uninterruptiblepowersupplies(UPS)
· Switched-modeandresonant-mode
powersupplies
· AC motor speed control
· DC servo and robot drives
· DC choppers
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
V
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 mA
mA
Advantages
1
· High power density
IGES
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
±100 nA
2.0
· Suitableforsurfacemounting
· Very low switching losses for high
frequencyapplications
VCE(sat)
1.7
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98506B(07/99)
1 - 4
IXGA 20N60B
IXGP 20N60B
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
TO-220 AB (IXGP) Outline
min. typ.
max.
IC = IC90; VCE = 10 V,
9
17
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1500
175
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
90
11
30
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
td(on)
tri
15
35
ns
ns
Inductive load, TJ = 25°C
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
IC = IC90, VGE = 15 V, L = 100 mH,
Eon
td(off)
tfi
0.15
150
100
0.7
mJ
VCE = 0.8 VCES, RG = Roff = 10 W
C
D
9.91 10.66 0.390 0.420
3.54
4.08 0.139 0.161
200 ns
150 ns
1.0 mJ
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
E
F
5.85
2.54
6.85 0.230 0.270
3.18 0.100 0.125
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
Eoff
J
K
0.64
1.01 0.025 0.040
td(on)
tri
15
35
ns
ns
Inductive load, TJ = 125°C
2.54 BSC 0.100 BSC
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
Eon
td(off)
tfi
0.15
220
140
1.2
mJ
ns
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
,
ns
Eoff
mJ
TO-263 AA (IXGA) Outline
RthJC
RthCK
0.83 K/W
K/W
(TO-220)
0.25
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160 .190
.080 .110
b
b2
0.51
1.14
0.99
1.40
.020 .039
.045 .055
Min. Recommended Footprint
c
c2
0.46
1.14
0.74
1.40
.018 .029
.045 .055
D
D1
8.64
7.11
9.65
8.13
.340 .380
.280 .320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380 .405
.270 .320
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575 .625
.090 .110
.040 .055
.050 .070
L1
L2
L3
L4
0
.015
R
0.46
0.74
.018 .029
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGA 20N60B
IXGP 20N60B
200
160
120
80
100
80
60
40
20
0
TJ = 25°C
VGE = 15V
VGE = 15V
TJ = 25°C
13V
11V
13V
9V
7V
11V
9V
7V
40
5V
5V
0
0
2
4
6
8
10
0
1
2
3
4
5
VCE - Volts
Fig. 2. Extended Output Characteristics
VCE - Volts
Fig. 1. Output Characteristics
1.75
100
80
60
40
20
0
VGE = 15V
VGE = 15V
TJ = 125°C
IC = 40A
13V
11V
1.50
1.25
1.00
0.75
0.50
9V
IC = 20A
7V
5V
IC = 10A
25
50
75
TJ - Degrees C
Fig. 4. Temperature Dependence of VCE(sat)
100
125
150
0
1
2
3
4
5
VCE - Volts
Fig. 3. High Temperature Output Characteristics
100
4000
VCE = 10V
f = 1Mhz
C
C
iss
80
60
40
20
0
1000
100
10
oss
TJ =125°C
C
rss
TJ = 25°C
3
4
5
6
7
8
9
10
0
5
10 15 20 25 30 35 40
VCE-Volts
VGE - Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
© 2000 IXYS All rights reserved
3 - 4
IXGA 20N60B
IXGP 20N60B
4
3
2
1
0
8
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 125°C
TJ = 125°C
RG = 10
IC =40A
6
E(OFF)
E(ON)
4
E(ON)
IC = 20A
IC = 10A
E(ON)
E(ON)
E(OFF)
2
E(OFF)
E(OFF)
0
60
0
10
20
30
40
50
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 8. Dependence of EON and EOFF on RG.
15
100
IC = 20A
VCE = 300V
40
12
9
10
1
TJ = -55 to +125°C
RG = 4.7
dV/dt < 5V/ns
6
3
0
0.1
0
20
40
60
80
100
0
100
200
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
300
400
500
600
Qg - nanocoulombs
Fig. 9. Gate Charge
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
Single pulse
0.0001
D = Duty Cycle
0.00001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case
© 2000 IXYS All rights reserved
4 - 4
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