IXGH72N60A3 [IXYS]
GenX3 600V IGBT; GenX3 600V IGBT
| 型号： | IXGH72N60A3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT |
| 文件： | 总6页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 600V IGBT
IXGH72N60A3
IXGT72N60A3
VCES = 600V
IC110 = 72A
Ultra Low Vsat PT IGBT for
up to 5kHz switching
VCE(sat) ≤ 1.35V
tfi(typ) = 250ns
TO-247 (IXGH)
Symbol
VCES
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
600
600
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
G
C
C (TAB)
E
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
75
72
A
A
A
TO-268 (IXGT)
TC = 25°C, 1ms
400
SSOA
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped inductive load @ ≤ 600V
ICM = 150
A
(RBSOA)
G
PC
TC = 25°C
540
W
E
C (TAB)
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
G = Gate
C
= Collector
E = Emitter
TAB = Collector
-55 ... +150
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
Features
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
z Optimized for low conduction losses
z Square RBSOA
z International standard packages
Weight
TO-247
TO-268
6
4
g
g
Advantages
z High power density
z Low gate drive requirement
Applications
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
z Power Inverters
z UPS
z Motor Drives
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
600
V
V
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
3.0
5.0
ICES
VCE = VCES
VGE = 0V
75 μA
750 μA
TJ = 125°C
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = 60A, VGE = 15V, Note 1
1.35
V
© 2008 IXYS CORPORATION, All rights reserved
DS99759B(07/08)
IXGH72N60A3
IXGT72N60A3
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
48
76
S
Cies
Coes
Cres
6600
360
80
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
1
2
3
Qg
230
40
nC
nC
nC
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
78
Terminals: 1 - Gate
2 - Drain
td(on)
tri
31
34
ns
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Eon
td(off)
tfi
1.38
320
250
3.5
mJ
ns
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
ns
Eoff
mJ
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
td(on)
tri
29
32
ns
ns
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
Eon
td(off)
tfi
2.6
510
375
6.5
mJ
ns
∅P 3.55
Q
3.65
.140 .144
VCE = 480V, RG = 3Ω
5.89
6.40 0.232 0.252
ns
R
4.32
5.49 .170 .216
Eoff
mJ
RthJC
RthCS
0.23 °C/W
°C/W
TO-268 Outline
0.15
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGH72N60A3
IXGT72N60A3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
120
100
80
60
40
20
0
330
300
270
240
210
180
150
120
90
VGE = 15V
13V
11V
VGE = 15V
13V
11V
9V
7V
9V
7V
60
30
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.8
15
0
1
2
3
4
5
6
7
8
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
120
100
80
60
40
20
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
13V
11V
VGE = 15V
9V
I C = 120A
I C = 60A
7V
5V
I C = 30A
100
-50
-25
0
25
50
75
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
TJ = 25ºC
I C = 120A
60A
30A
TJ = 125ºC
25ºC
- 40ºC
60
40
20
0
5
6
7
8
9
10
11
12
13
14
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGH72N60A3
IXGT72N60A3
Fig. 7. Transconductance
Fig. 8. Gate Charge
130
120
110
100
90
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 60A
I
G = 10 mA
25ºC
80
125ºC
70
60
50
6
40
4
30
20
2
10
0
0
0
20
40
60
80
100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200 220 240
QG - NanoCoulombs
IC - Amperes
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
160
140
120
100
80
100,000
10,000
1,000
100
= 1 MHz
f
C
ies
C
C
oes
60
TJ = 125ºC
40
RG = 3Ω
dV / dt < 10V / ns
20
res
0
10
100 150 200 250 300 350 400 450 500 550 600 650
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_72N60A3 (76)3-25-08-B
IXGH72N60A3
IXGT72N60A3
Fig. 12. Inductive Switching
Fig. 13. Inductive Switching
Energy Loss vs. Gate Resistance
Energy Loss vs. Collector Current
18
16
14
12
10
8
6.75
6.00
5.25
4.50
3.75
3.00
2.25
1.50
0.75
0.00
18
16
14
12
10
8
9
8
7
6
5
4
3
2
1
0
E
E
on - - - -
off
RG = 3ꢀ VGE = 15V
,
I C = 100A
VCE = 480V
TJ = 125ºC
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
CE = 480V
V
I C = 50A
TJ = 25ºC
6
6
4
4
2
2
I C = 25A
15
0
0
0
5
10
20
25
30
35
20
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
390
387
384
381
378
375
372
369
366
363
360
1400
18
16
14
12
10
8
7
6
5
5
4
3
2
2
1
0
tf
td(off) - - - -
E
E
on - - - -
off
1300
1200
1100
1000
900
TJ = 125ºC, VGE = 15V
CE = 480V
RG = 3ꢀ VGE = 15V
,
V
VCE = 480V
I C = 100A
I C = 100A
I C = 50A
I C = 50A
800
6
700
4
600
I C = 25A
500
2
I C = 25A
400
0
0
5
10
15
20
25
30
35
25
35
45
55
65
75
85
95
105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
400
380
360
340
320
300
280
260
240
220
580
540
500
460
420
380
340
300
260
220
400
610
570
530
490
450
410
370
330
290
250
380
360
340
320
300
280
260
240
220
TJ = 125ºC
I C = 25A, 50A, 100A
tf
td(off) - - - -
RG = 3ꢀ , VGE = 15V
VCE = 480V
tf
td(off) - - - -
RG = 3ꢀ , VGE = 15V
CE = 480V
TJ = 25ºC
V
25
35
45
55
65
75
85
95 105 115 125
20
30
40
50
60
70
80
90
100
IC - Amperes
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXGH72N60A3
IXGT72N60A3
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
90
80
70
60
50
40
30
20
10
0
35
34
33
32
31
30
29
28
27
26
120
110
100
90
120
110
100
90
tr
td(on) - - - -
t r
td(on) - - - -
TJ = 25ºC
TJ = 125ºC , VGE = 15V
CE = 480V
RG = 3ꢀ , VGE = 15V
CE = 480V
V
V
I C = 100A
TJ = 125ºC
80
80
70
70
60
60
I C = 50A
I C = 25A
50
50
40
40
30
30
20
20
10
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
100
90
80
70
60
50
40
30
20
10
35
34
33
32
31
30
29
28
27
26
I C = 100A
tr
td(on) - - - -
RG = 3 , VGE = 15V
Ω
VCE = 480V
I C = 50A
I C = 25A
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_72N60A3 (76)3-25-08-B
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