IXGX50N60AU1 [IXYS]
HiPerFAST IGBT with Diode; HiPerFAST IGBT与二极管
| 型号： | IXGX50N60AU1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT with Diode |
| 文件： | 总6页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary data
HiPerFASTTM
IGBT with Diode
VCES
IC25
= 600 V
= 75 A
IXGX50N60AU1
IXGX50N60AU1S
VCE(sat) = 2.7 V
tfi = 275 ns
Combi Pack
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
TestConditions
Maximum Ratings
TAB)
G
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
E
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-247 Hole-less
(50N60AU1)
IC25
IC90
ICM
TC = 25°C, limited by leads
TC = 90°C
75
50
A
A
A
C (TAB)
TC = 25°C, 1 ms
200
G
C
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 30 µH
ICM = 100
@ 0.8 VCES
A
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
PC
TC = 25°C
300
W
Features
TJ
-55 ... +150
150
°C
°C
°C
l
Hole-less TO-247 for clip mount
High current capability
High frequency IGBT and anti-
parallel FRED in one package
Low VCE(sat)
TJM
Tstg
l
l
-55 ... +150
Weight
6
g
l
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast RecoveryEpitaxial Diode (FRED)
- soft recovery with low IRM
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
l
l
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
l
l
l
BVCES
VGE(th)
IC = 500 µA, VGE = 0 V
IC = 500 µA, VCE = VGE
600
2.5
V
l
Switch-mode and resonant-mode
5.5
V
power supplies
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
250
15 mA
µA
Advantages
l
Space savings (two devices in one
IGES
VCE = 0 V, VGE = ±20 V
±100
2.7
nA
V
package)
Reduces assembly time and cost
High power density
l
VCE(sat)
IC = IC90, VGE = 15 V
l
© 1997 IXYS All rights reserved
97513 (5/97)
IXGX50N60AU1
IXGX50N60AU1S
TO-247 HOLE-LESS
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
25
35
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Qg
200
50
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
80
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
50
210
200
275
4.8
ns
ns
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
ns
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
400 ns
mJ
Eoff
td(on)
tri
50
240
3
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Eon
td(off)
tfi
mJ
ns
280
600
9.6
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
Eoff
mJ
RthJC
RthCK
0.42 K/W
K/W
0.15
TO-247 HOLE-LESS SMD
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
1.7
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 480 A/µs
VR = 360 V
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C
19
175
35
33
50
A
ns
ns
TJ =125°C
RthJC
0.75 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGX50N60AU1
IXGX50N60AU1S
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
13V
11V
VGE = 15V
TJ = 25°C
TJ = 25°C
9V
VGE = 15V
13V
11V
9V
7V
5V
7V
5V
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig. 4 Temperature Dependence
of Output Saturation Voltage
10
9
8
7
6
5
4
3
2
1
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
TJ = 25°C
IC = 80A
IC = 40A
IC = 20A
IC = 40A
C = 20A
I
4
5
6
7
8
9
10 11 12 13 14 15
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VGE - Volts
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
80
70
60
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VCE = 100V
VGE(th) @ 250µA
BVCES @ 3mA
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VGE - Volts
© 1997 IXYS All rights reserved
IXGX50N60AU1
IXGX50N60AU1S
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
15
12
9
100
10
IC = 40A
VCE = 500V
TJ = 125°C
dV/dt < 3V/ns
1
6
0.1
0.01
3
0
0
50
100
150
200
250
0
100 200 300 400 500 600 700
VCE - Volts
Total Gate Charge - (nC)
Capacitance Curves
Fig.9
4500
4000
3500
3000
2500
2000
1500
1000
500
Cies
Coe s
Cres
0
0
5
10
15
20
25
VCE - Volts
Fig.10 Transient Thermal Impedance
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - seconds
0.1
1
10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGX50N60AU1
IXGX50N60AU1S
© 1997 IXYS All rights reserved
IXGX50N60AU1
IXGX50N60AU1S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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