IXGX50N60C2D1 [IXYS]
HiPerFAST IGBT with Diode; HiPerFAST IGBT与二极管
| 型号： | IXGX50N60C2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT with Diode |
| 文件： | 总6页 (文件大小：629K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM
VCES
IC25
= 600 V
= 75 A
= 2.5 V
= 48 ns
IXGK50N60C2D1
IXGX 50N60C2D1
IGBT with Diode
VCE(sat)
tfi(typ)
C2-Class High Speed IGBTs
Preliminary Data Sheet
Symbol
TestConditions
Maximum Ratings
TO-264 AA
(IXGK)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
(TAB)
G
G
E
C
VGES
VGEM
Continuous
Transient
20
30
V
V
PLUS247
(IXGX)
IC25
IC110
IF110
ICM
TC = 25°C (limited by leads)
TC = 110°C
TC = 110°C
75
50
48
A
A
A
A
(TAB)
E
TC = 25°C, 1 ms
300
G = Gate
C = Collector
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM = 100
A
E = Emitter
Tab = Collector
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
480
W
Features
• Very high frequency IGBT and
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
Md
Mounting torque, TO-264
1.13/10 Nm/lb.in.
• Fast Recovery Epitaxial Diode (FRED)
Weight
TO-264
PLUS247
10
6
g
g
with soft recovery and low IRM
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
• Switch-mode and resonant-mode
power supplies
Symbol
TestConditions
Characteristic Values
• Uninterruptible power supplies (UPS)
(TJ = 25°C, unless otherwise specified)
• DC choppers
Min. Typ. Max.
• AC motor speed control
• DC servo and robot drives
VGE(th)
ICES
IC = 250 µA, VCE = VGE
3.0
5.0
V
VCE = V
T = 25°C
TJJ = 125°C
650
5
µA
VGE = 0CVES
mA
IGES
VCE = 0 V, VGE = 20 V
100
2.5
nA
Advantages
VCE(sat)
IC = 40 A, VGE = 15 V
Note 1
T = 25°C
TJJ = 125°C
2.1
1.8
V
V
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99148A(05/04)
IXGK50N60C2D1
IXGX 50N60C2D1
TO-264 AA Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 40 A; VCE = 10 V,
Note 1
40
51
S
Cies
Coes
Cres
3700
290
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
138
25
40
nC
nC
nC
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
td(on)
tri
td(off)
tfi
18
25
ns
ns
A
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
.190
.202
A1
A2
.100
.079
.114
.083
Inductive load, TJ = 25°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0 Ω
b
.044
.094
.114
.021
1.020
.780
.056
.106
.122
.033
1.030
.786
115 150 ns
48 ns
0.38 0.7 mJ
b1
b2
c
D
Eoff
E
e
5.46BSC
.215BSC
td(on)
tri
Eon
td(off)
tfi
18
25
1.4
170
60
0.74
ns
ns
mJ
ns
ns
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0 Ω
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
1.78
4.32
2.29
.150
.070
.170
.090
Eoff
mJ
R1
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
RthJC
RthCK
0.31 K/W
K/W
0.15
PLUS247 Outline
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 60 A, VGE = 0 V,
Note 1
2.1
1.4
V
TJ = 150°C
IRM
IF = 60 A, V = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V GE
8.3
A
trr
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
ns
0.65 K/W
Terminals: 1 - Gate
RthJC
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A12
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
b
b12
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
L
19.81 20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 0.244
.170 .190
R
4.32
4.83
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGK50N60C2D1
IXGX 50N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
80
70
60
50
40
30
20
10
0
320
280
240
200
160
120
80
VGE = 15V
13V
9V
VGE = 15V
13V
11V
11V
7V
6V
9V
7V
40
5V
5V
7
0
0.5
0.5
5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
6
8
9
10
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
80
70
60
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VGE = 15V
13V
9V
VGE = 15V
7V
11V
IC = 80A
6V
IC = 40A
IC = 20A
5V
1
1.5
2
2.5
3
3.5
4
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
4.8
4.5
4.2
3.9
3.6
3.3
3
TJ = 25ºC
IC = 80A
40A
20A
60
TJ = 125ºC
25ºC
40
2.7
2.4
20
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
VG E - Volts
© 2004 IXYS All rights reserved
IXGK50N60C2D1
IXGX 50N60C2D1
Fig. 8. Dependence of Turn-Off
Ene r gy on RG
Fig. 7. Transconductance
70
60
50
40
30
20
10
0
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
TJ = 125ºC
VGE = 15V
VCE = 480V
TJ = 25ºC
IC = 80A
125ºC
IC = 40A
IC = 20A
0
20
2
20 40 60 80 100 120 140 160 180 200
2
4
6
8
10
12
14
16
18
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Turn-Off
Ene r gy on Ic
Fig. 10. Dependence of Turn-Off
Energy on Temperature
2.2
2
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
RG = 2Ω
RG = 10Ω - - - -
VGE = 15V
RG = 2Ω
RG = 10Ω - - - -
VGE = 15V
1.8
1.6
1.4
1.2
1
VCE = 480V
VCE = 480V
IC = 80A
IC = 40A
TJ = 125ºC
0.8
0.6
0.4
0.2
0
TJ = 25ºC
IC = 20A
25 35 45 55 65 75 85 95 105 115 125
30
40
50
60
70
80
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Switching Time on RG
Fig. 12. Dependence of Turn-Off
Switching Time on Ic
450
400
350
300
250
200
150
100
50
200
180
160
140
120
100
80
td(off)
fi
TJ = 125ºC
VGE = 15V
VCE = 480V
td(off)
t -
- - - - -
tfi
- - - - - -
RG = 2Ω
VGE = 15V
VCE = 480V
TJ = 125ºC
IC = 20A
IC = 40A
TJ = 25ºC
IC = 80A
60
40
4
6
8
10
12
14
16
18
20
30
40
50
60
70
80
R G - Ohms
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK50N60C2D1
IXGX 50N60C2D1
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
Fig. 14. Reverse-Bias
Safe Operating Area
110
100
90
80
70
60
50
40
30
20
10
0
200
180
160
140
120
100
80
td(off)
t -
- - - - -
RG = 2Ω
GE = 15V
VCE = 480V
fi
IC = 20A
V
IC = 80A
º
TJ = 125 C
G = 10Ω
dV/dT < 10V/ns
IC = 40A
R
60
40
IC = 20A
20
25 35 45 55 65 75 85 95 105 115 125
100
200
300
V C E - Volts
400
500
600
TJ - Degrees Centigrade
Fig. 16. Capacitance
Fig. 15. Gate Charge
16
14
12
10
8
10000
1000
100
VCE = 300V
IC = 40A
f = 1 MHz
I
G = 10mA
C
ies
6
C
C
oes
res
4
2
0
10
0
30
60
90
120
150
0
5
10
15
20
25
30
35
40
VC E - Volts
Q G - nanoCoulombs
Fig. 16. Maximum Transient Thermal Resistance
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
IXGK50N60C2D1
IXGX 50N60C2D1
160
A
140
4000
nC
80
T = 100°C
VVRJ= 300V
T = 100°C
VVRJ= 300V
A
120
100
80
60
40
20
0
3000
2000
1000
0
60
IF
TVJ= 25°C
TVJ=100°C
I =120A
IF= 60A
IFF= 30A
IRM
Qr
I =120A
IFF= 30A
IF= 60A
40
20
0
TVJ=150°C
A/µs
0
1
2
V
100
1000
0
200 400 600 1000
-diF/dt
A/µs
-diF/dt
VF
Fig. 17. Forward current IF versus VF
2.0
Fig. 18. Reverse recovery charge Qr
versus -diF/dt
Fig. 19. Peak reverse current IRM
versus -diF/dt
140
20
V
1.6
µs
T = 100°C
VVRJ= 300V
ns
130
VFR
tfr
trr
1.5
Kf
15
10
5
1.2
tfr
VFR
120
110
100
90
I =120A
IF= 60A
IFF= 30A
1.0
0.8
0.4
0.
IRM
0.5
Qr
T = 100°C
IFVJ = 60A
0.0
80
0
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 20. Dynamic parameters Qr, IRM
versus TVJ
Fig. 21. Recovery time trr versus -diF/dt
Fig. 22. Peak forward voltage VFR and
tfr versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
R
thi (K/W)
ti (s)
0.1
ZthJC
1
2
3
0.324
0.125
0.201
0.0052
0.0003
0.0385
0.01
0.001
Note: Fig. 2 through Fig. 6 show typical
values
DSEP 60-06A
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
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