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IXTA50N25T [IXYS]

Trench Gate Power MOSFET N-Channel Enhancement Mode; 沟槽栅功率MOSFET N沟道增强模式
IXTA50N25T
型号： IXTA50N25T
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Trench Gate Power MOSFET N-Channel Enhancement Mode
沟槽栅功率MOSFET N沟道增强模式

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中文：  中文翻译
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IXTA50N25T IXTQ50N25T  
IXTP50N25T IXTH50N25T  
Trench Gate  
Power MOSFET  
VDSS = 250V  
ID25 = 50A  
RDS(on) ≤ 60mΩ  
N-Channel Enhancement Mode  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
S
G
D (Tab)  
D
D (Tab)  
D (Tab)  
S
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
250  
V
V
VGSM  
Transient  
± 30  
V
G
D
D (Tab)  
= Drain  
S
ID25  
IDM  
TC = 25°C  
50  
130  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G = Gate  
D
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
A
J
S = Source  
Tab = Drain  
1.5  
PD  
TC = 25°C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z Avalanche Rated  
z High Current Handling Capability  
z Fast Intrinsic Rectifier  
Low RDS(on)  
TL  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 s  
300  
260  
°C  
°C  
z
Md  
FC  
Mounting Torque (TO-220, TO-3P &TO-247)  
Mounting Force (TO-263)  
1.13 / 10  
10..65 / 2.2..14.6  
Nmlb.in.  
N/lb.  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
z High Power Density  
z Easy to Mount  
z Space Savings  
TO-247  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ . Max.  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
z DC-DC Coverters  
z Battery Chargers  
BVDSS  
VGS(th)  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
250  
3.0  
V
V
z Switch-Mode and Resonant-Mode  
Power Supplies  
5.0  
IGSS  
IDSS  
VGS = ± 20V, VDS = 0V  
± 100 nA  
μA  
z DC Choppers  
z AC and DC Motor Drives  
z Uninterrupted Power Supplies  
z High Speed Power Switching  
Applications  
VDS = VDSS, VGS = 0V  
1
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
150 μA  
60 mΩ  
RDS(on)  
DS99346B(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA50N25T IXTQ50N25T  
IXTP50N25T IXTH50N25T  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ . Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
35  
58  
S
Ciss  
Coss  
Crss  
4000  
pF  
pF  
pF  
410  
60  
td(on)  
tr  
td(off)  
tf  
14  
25  
47  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
78  
19  
22  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25  
Qgd  
RthJC  
RthCH  
0.31 °C/W  
(TO-220)  
(TO-3P & TO-247)  
0.50  
0.25  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ .  
Max.  
IS  
VGS = 0V  
50  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
200  
1.5  
trr  
166  
23  
ns  
A
IF = 25A, -di/dt = 250A/μs  
IRM  
QRM  
VR = 100V, VGS = 0V  
1.9  
μC  
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA50N25T IXTQ50N25T  
IXTP50N25T IXTH50N25T  
TO-263 (IXTA) Outline  
TO-220 (IXTP) Outline  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
TO-247 (IXTH) Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
∅ P  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
TO-3P (IXTQ) Outline  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
e
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA50N25T IXTQ50N25T  
IXTP50N25T IXTH50N25T  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
VGS = 10V  
7V  
VGS = 10V  
8V  
7V  
6V  
60  
6V  
5V  
40  
5V  
20  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
0
4
8
12  
16  
20  
24  
28  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
I D = 50A  
I D = 25A  
1.6  
1.2  
0.8  
0.4  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA50N25T IXTQ50N25T  
IXTP50N25T IXTH50N25T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
3.6  
4.0  
4.4  
4.8  
5.2  
5.6  
6.0  
6.4  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
VDS = 125V  
I D = 25A  
I G = 10mA  
60  
TJ = 125ºC  
TJ = 25ºC  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
10,000  
1,000  
100  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA50N25T IXTQ50N25T  
IXTP50N25T IXTH50N25T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
26  
25  
24  
23  
22  
21  
20  
19  
26  
25  
24  
23  
22  
21  
20  
RG = 3.3ꢀ  
VGS = 15V  
,
TJ = 25ºC  
VDS = 125V  
RG = 3.3Ω  
VGS = 15V  
,
VDS = 125V  
I D = 25A  
I D = 50A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
ID - Amperes  
35  
40  
45  
50  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
28  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
42  
38  
34  
30  
26  
22  
18  
14  
25  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
tr  
TJ = 125ºC, VGS = 15V  
DS = 125V  
td(on)  
- - - -  
tf  
RG = 3.3ꢀ, VGS = 15V  
DS = 125V  
td(off)  
- - - -  
23  
21  
19  
17  
15  
13  
V
V
I D = 25A, 50A  
I D = 25A  
I D = 50A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
30  
28  
26  
24  
22  
20  
18  
16  
66  
62  
58  
54  
50  
46  
42  
38  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
220  
200  
180  
160  
140  
120  
100  
80  
tf  
RG = 3.3ꢀ, VGS = 15V  
DS = 125V  
td(off)  
- - - -  
tf  
TJ = 125ºC, VGS = 15V  
DS = 125V  
td(off)  
- - - -  
V
TJ = 25ºC  
V
I D = 25A, 50A  
TJ = 125ºC  
TJ = 25ºC  
TJ = 125ºC  
60  
40  
2
4
6
8
10  
12  
14  
16  
18  
20  
15  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
ID - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_50N25T(5G)01-26-10-A  

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