IXTA52P10P [LITTELFUSE]

Power Field-Effect Transistor,;


型号：	IXTA52P10P
厂家：	LITTELFUSE
描述：	Power Field-Effect Transistor, 局域网开关脉冲晶体管
文件：	总7页 (文件大小：186K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PolarP^TM

Power MOSFETs

V_DSS= - 100V

I_D25= - 52A

IXTA52P10P

IXTP52P10P

IXTQ52P10P

IXTH52P10P

R_DS(on)

≤

50mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-3P (IXTQ)

TO-263 AA (IXTA)

TO-220AB (IXTP)

D (Tab)

Tab

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

-100

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

D (Tab)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 52

-130

G = Gate

= Drain

S = Source

Tab = Drain

I_A

T_C= 25°C

- 52

1.5

E_AS

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

300

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^zInternational Standard Packages

^zFast Intrinsic Diode

^zDynamic dv/dt Rated

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic body for 10s

300

260

°C

^zRugged PolarP^TMProcess

^zLow Q_Gand R_ds(on)

M_d

Mounting Torque

(TO-3P,TO-220,TO-247)

1.13/10

Nm/lb.in.

^zLow Drain-to-Tab Capacitance

^zLow Package Inductance

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

6.0

TO-247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

-100

- 2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 4.0

Applications

±100 nA

High-Side Switching

Push-Pull Amplifiers

DC Choppers

Current Regulators

I_DSS

-10 μA

-150 μA

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

50 mΩ

Automatic Test Equipment

DS99912C(01/13)

IXTA52P10P IXTQ52P10P

IXTP52P10P IXTH52P10P

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= -10V, I_D= 0.5 • I_D25, Note 1

V_GS= 0V, V_DS= - 25V, f = 1MHz

C_iss

C_oss

C_rss

2845

1015

275

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= -10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 3.3Ω (External)

Q_g(on)

Q_gs

V_GS= -10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

R_thJC

R_thCS

0.42 °C/W

°C/W

(TO-3P)(TO-247)

(TO-220)

0.21

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

I_S

V_GS= 0V

- 52

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= - 26A, V_GS= 0V, Note 1

- 200

- 3.5

t_rr

Q_RM

I_RM

120

0.53

- 8.9

μC

I_F= - 26A, -di/dt = -100A/μs

V_R= - 50V, V_GS= 0V

Note

1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXTA52P10P IXTQ52P10P

IXTP52P10P IXTH52P10P

TO-247 Outline

TO-3P Outline

Pins: 1 - Gate

3 - Source

2,4 - Drain

1 = Gate

2 = Drain

3 = Source

TO-263 Outline

TO-220 Outline

Pins: 1 - Gate

3 - Source

2 - Drain

IXTA52P10P IXTQ52P10P

IXTP52P10P IXTH52P10P

Fig. 1. Output Characteristics @ T_J= 25ºC

Fig. 2. Extended Output Characteristics @ T_J= 25ºC

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

-130

-110

-90

V_GS= -10V

- 9V

V_GS= -10V

- 9V

- 8V

-70

- 7V

- 6V

-50

- 7V

-30

- 6V

- 5V

-10

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-5

-10

-15

-20

-25

-30

150

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= - 26A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125ºC

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

V_GS= -10V

- 9V

V_GS= -10V

I _D= - 52A

- 8V

I _D= - 26A

- 7V

- 6V

- 5V

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-4.5

-5.0

-5.5

-50

-25

100

125

V_DS- Volts

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to I_D= - 26A Value vs.

Drain Current

Fig. 6. Maximum Drain Current vs.

Case Temperature

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

-60

-50

-40

-30

-20

-10

V_GS= -10V

T_J= 125ºC

T_J= 25ºC

-10

-20

-30

-40

-50

-60

-70

-80

-90

-100

-50

-25

100

125

I_D- Amperes

T_C- Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA52P10P IXTQ52P10P

IXTP52P10P IXTH52P10P

Fig. 8. Transconductance

Fig. 7. Input Admittance

-70

-60

-50

-40

-30

-20

-10

T_J= - 40ºC

25ºC

125ºC

25ºC

125ºC

-3.0

-3.5

-4.0

-4.5

-5.0

-5.5

-6.0

-6.5

-7.0

-7.5

-8.0

-5.0

-40

-10

-20

-30

-40

-50

-60

-70

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode

Fig. 10. Gate Charge

-160

-140

-120

-100

-80

-60

-40

-20

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

V_DS= - 50V

I _D= - 26A

_G= -1mA

T_J= 125ºC

T_J= 25ºC

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-4.5

V_SD- Volts

Q_G- NanoCoulombs

Fig. 12. Forward-Bias Safe Operating Area

Fig. 11. Capacitance

10,000

1,000

100

1,000

= 1 MHz

iss

100µs

R_DS(on)Limit @ V

= -15V

25µs

1ms

100

10ms

oss

DC, 100ms

rss

T_J= 150ºC

_C= 25ºC

Single Pulse

100

-5

-10

-15

-20

-25

-30

-35

V_DS- Volts

IXTA52P10P IXTQ52P10P

IXTP52P10P IXTH52P10P

Fig. 13. Maximum Transient Thermal Impedance

0.1

0.01

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_52P10P(B5)3-25-08-B

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXTA52P10P [LITTELFUSE]

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