IXTH3N120 [IXYS]
High Voltage Power MOSFETs; 高电压功率MOSFET
| 型号： | IXTH3N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage Power MOSFETs |
| 文件： | 总4页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage
VDSS
ID25
=1200 V
3 A
IXTH3N120
Power MOSFETs
=
VDS(on)
= 4.5 Ω
N-ChannelEnhancementMode
AvalancheRated,Highdv/dt
PreliminaryDataSheet
Symbol
VDSS
TestConditions
Maximum Ratings
TO-247
TJ = 25°C to 150°C
3N120
3N110
1200
1100
V
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
3N120
3N110
1200
V
1100
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
D (TAB)
S
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
3
12
3
A
A
A
G = Gate
D
= Drain
S = Source
TAB = Drain
EAR
EAS
TC = 25°C
20
mJ
mJ
700
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
,
5
V/ns
Features
TJ ≤ 150°C, RG = 2 Ω
z
International standard packages
Low RDS (on)
PD
TC = 25°C
150
W
z
z
TJ
TJM
Tstg
-55 to +150
150
-55 to +150
°C
°C
°C
Rated for unclamped Inductive load
Switching (UIS)
z
Molding epoxies meet UL 94 V-0
flammability classification
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Md
1.13/10 Nm/lb.in.
Advantages
Weight
6
g
z
Easy to mount
z
Space savings
z
High power density
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, I = 1 mA
1200
2.5
V
V
VGS(th)
VDS = VGS, IDD = 250 µA
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = 0.8 VDSS
VGS = 0 V
T
= 25°C
25
1
µA
TJJ = 125°C
mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
4.5
Ω
Note 1
© 2003 IXYS All rights reserved
DS99025(03/03)
IXTH 3N120
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = 10 V; ID = 0.5 • ID25, Note 1
1.5
2.2
S
Ciss
Coss
Crss
1050 1300
100 125
pF
pF
pF
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz
25
50
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 Ω (External),
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
Qgd
39
9
22
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.8
K/W
K/W
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
.780 .800
.177
P
3.55
5.89
3.65
.140 .144
Symbol
TestConditions
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0 V
3
12
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Note 1
A
V
1.5
IF = IS, -di/dt = 100 A/µs, VR = 100 V
700
ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 3N120
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
VGS = 9V
TJ = 125OC
TJ = 25OC
VGS = 9V
8V
7V
6V
8V
7V
6V
5V
4V
5V
0
3
6
9
12 15 18 21 24 27 30
0
2
4
6
8
10 12 14 16 18 20
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C
VDS - Volts
Fig. 2 Output Characteristics @ Tj = 125°C
2.50
2.8
VGS = 10V
VGS = 10V
2.25
2.00
1.75
1.50
1.25
1.00
0.75
TJ = 125OC
2.5
2.2
1.9
1.6
1.3
1.0
ID = 3A
ID =1.5A
TJ = 25OC
0
1
2
3
4
5
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Fig. 3 RDS(on) vs. Drain Current
Fig.4 Temperature Dependence of Drain
to Source Resistance
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 125oC
TJ = 25oC
-50 -25
0
25 50 75 100 125 150
3.5
4.0
4.5
5.0
5.5
6.0
TC - Degrees C
VGS - Volts
Fig. 6 Drain Current vs Gate Source Voltage
Fig.5 Drain Current vs. Case Temperature
© 2003 IXYS All rights reserved
IXTH 3N120
12
10
8
Ciss
f = 1MHz
1000
100
10
V
DS = 600V
ID = 1.5A
Coss
Crss
6
4
2
0
0
10
20
30
40
50
60
0
5
10 15 20 25 30 35 40
Gate Charge - nC
Fig.7GateChargeCharacteristicCurve
VDS - Volts
Fig.8 CapacitanceCurves
5
VGS = 0V
4
3
2
1
0
TJ = 125OC
TJ = 25OC
0.2
0.4
0.6
VSD - Volts
Fig.9DrainCurrentvsDraintoSourceVoltage
0.8
1.0
1.00
0.10
0.01
0.00
Single Pulse
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10TransientThermalImpedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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