IXTP8N70X2M [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXTP8N70X2M |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X2-Class
Power MOSFET
VDSS = 700V
ID25 = 8A
IXTP8N70X2M
RDS(on) 550m
(Electrically Isolated Tab)
N-Channel Enhancement Mode
OVERMOLDED
TO-220
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
700
700
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
G
D
S
VGSS
VGSM
Continuous
Transient
30
40
V
V
G = Gate
S = Source
D = Drain
ID25
IDM
TC = 25C, Limited by TJM
TC = 25C, Pulse Width Limited by TJM
8
A
A
16
IA
TC = 25C
TC = 25C
4
A
EAS
250
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
50
32
V/ns
W
Features
International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
Md
Mounting Torque
1.13 / 10
2.5
Nm/lb.in
g
Weight
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
Characteristic Values
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
700
V
V
3.0
5.0
100 nA
IDSS
10 A
TJ = 125C
250 A
RDS(on)
VGS = 10V, ID = 4A, Note 1
550 m
DS100755A(1/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTP8N70X2M
Symbol
Test Conditions
Characteristic Values
OVERMOLDED TO-220
(IXTP...M)
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 4A, Note 1
Gate Input Resistance
4.8
8.0
S
RGi
6
Ciss
Coss
Crss
800
495
2.2
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1
2
3
Effective Output Capacitance
Co(er)
Co(tr)
43
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
129
td(on)
tr
td(off)
tf
24
28
53
24
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 4A
V
RG = 30 (External)
Qg(on)
Qgs
12.0
3.1
nC
nC
nC
Terminals: 1 - Gate
2 - Drain
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
3 - Source
Qgd
4.4
RthJC
RthCS
3.90 C/W
C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
8
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
32
1.4
V
trr
QRM
IRM
200
1.65
16.3
ns
IF = 4A, -di/dt = 100A/μs
μC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTP8N70X2M
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
8
7
6
5
4
3
2
1
0
18
16
14
12
10
8
V
= 10V
8V
V
= 10V
8V
GS
GS
7V
6V
7V
6
6V
5V
4
5V
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4
8
12
16
20
24
28
32
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 4A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
8
7
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 8A
D
I
= 4A
D
5V
4V
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
Fig. 5. RDS(on) Normalized to ID = 4A Value vs.
Drain Current
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= 10V
GS
T = 125ºC
J
BV
DSS
T = 25ºC
J
V
GS(th)
100
0
2
4
6
8
10
12
14
16
18
-60
-40
-20
0
20
40
60
80
120
140
160
TJ - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
IXTP8N70X2M
Fig. 7. Input Admittance
Fig. 8. Transconductance
10
9
8
7
6
5
4
3
2
1
0
14
12
10
8
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
6
- 40ºC
4
2
0
0
1
2
3
4
5
6
7
8
9
10
11
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
25
20
15
10
5
10
8
V
= 350V
DS
I
I
= 4A
D
G
= 10mA
6
4
T
J
= 125ºC
T
J
= 25ºC
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
VSD - Volts
QG - NanoCoulombs
Fig. 12. Output Capacitance Stored Energy
Fig. 11. Capacitance
10
9
8
7
6
5
4
3
2
1
0
10000
1000
100
10
C
iss
C
C
oss
rss
1
= 1 MHz
f
0.1
0
100
200
300
400
500
600
700
1
10
100
1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP8N70X2M
Fig. 14. Maximum Transient Thermal Impedance
Fig. 13. Forward-Bias Safe Operating Area
10
100
10
100μs
25μs
1ms
10ms
R
DS(
on
Limit
)
100ms
1s
DC
1
1
0.1
0.1
0.01
T = 150ºC
J
T
C
= 25ºC
Single Pulse
0.01
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
1
10
100
1,000
VDS - Volts
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_8N70X2(X2-R2T5) 1-19-17
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