IXTT440N055T2 [IXYS]
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode; N沟道增强模式额定雪崩快速内在二极管型号: | IXTT440N055T2 |
厂家: | IXYS CORPORATION |
描述: | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |
文件: | 总6页 (文件大小:193K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT2TM
Power MOSFET
VDSS = 55V
ID25 = 440A
RDS(on) ≤ 1.8mΩ
IXTH440N055T2
IXTT440N055T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXTH)
G
Symbol
VDSS
Test Conditions
Maximum Ratings
D
D (Tab)
S
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
55
55
V
V
VDGR
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
TO-268 (IXTT)
ID25
ILRMS
IDM
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
440
160
A
A
A
G
S
TC = 25°C, Pulse Width Limited by TJM
1200
D (Tab)
IA
TC = 25°C
TC = 25°C
TC = 25°C
200
1.5
A
J
EAS
PD
G = Gate
S = Source
D
= Drain
Tab = Drain
1000
W
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
-55 ... +175
Features
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
z Fast Intrinsic Diode
z
Low RDS(on)
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
z
Easy to Mount
Space Savings
High Power Density
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
55
V
V
z
z
2.0
4.0
±200 nA
Applications
IDSS
10 μA
z
TJ = 150°C
VGS = 10V, ID = 100A, Notes 1 & 2
750 μA
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching Applications
z
RDS(on)
1.8 mΩ
z
DS100220(12/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH440N055T2
IXTT440N055T2
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
85
140
S
Ciss
Coss
Crss
25
3370
645
nF
pF
pF
∅ P
1
2
3
RGi
Gate Input Resistance
1.24
Ω
td(on)
tr
td(off)
tf
26
28
72
62
ns
ns
ns
ns
Resistive Switching Times
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A
Terminals: 1 - Gate
2 - Drain
Tab - Drain
RG = 1Ω (External)
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
405
92
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
102
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCH
0.15 °C/W
°C/W
TO-247
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-Drain Diode
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
∅P 3.55
Q
3.65
.140 .144
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0V
440
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
1400
1.2
TO-268 (IXTT) Outline
trr
76
3.7
ns
A
IF = 100A, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 27.5V
140
nC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH440N055T2
IXTT440N055T2
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
VGS = 15V
VGS = 15V
10V
10V
7V
7V
6V
5V
6V
5V
4V
4V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized vs. Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
350
300
250
200
150
100
50
VGS = 15V
VGS = 10V
10V
8V
7V
I
D < 440A
6V
5V
4V
3V
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
Fig. 5. RDS(on) Normalized vs. Drain Current
180
160
140
120
100
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
External Lead Current limit
TJ = 175ºC
VGS = 10V
15V
60
TJ = 25ºC
40
20
0
0
50
100
150
200
250
300
350
400
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH440N055T2
IXTT440N055T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
200
180
160
140
120
100
80
TJ = - 40ºC
240
200
160
120
80
25ºC
150ºC
TJ = 150ºC
25ºC
- 40ºC
60
40
40
20
0
0
0
20
40
60
80
100
120
140
160
180
200
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
350
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
VDS = 27.5V
I
I
D = 220A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0
50
100
150
200
250
300
350
400
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000
100
10
100,000
10,000
1,000
100
R
Limit
DS(on)
C
iss
25µs
100µs
External Lead Limit
C
oss
1ms
T
T
= 175ºC
= 25ºC
J
10ms
C
rss
100ms
C
DC
= 1 MHz
5
f
Single Pulse
1
0
10
15
20
25
30
35
40
0.1
1
10
100
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH440N055T2
IXTT440N055T2
Fig. 14. Resistive Turn-on
Fig. 13. Resistive Turn-on
Rise Time vs. Drain Current
Rise Time vs. Junction Temperature
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
RG = 1ꢀ , VGS = 10V
DS = 27.5V
100A < I D < 200A
RG = 1Ω , VGS = 10V
DS = 27.5V
V
V
TJ = 125ºC
TJ = 25ºC
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
400
350
300
250
200
150
100
50
90
90
80
70
60
50
40
30
20
120
110
100
90
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 27.5V
tf
t
d(off) - - - -
RG = 1Ω, VGS = 10V
DS = 27.5V
80
70
60
50
40
30
20
10
V
V
I D = 200A
I D = 200A
I D = 100A
80
I D = 100A
70
60
50
0
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
800
700
600
500
400
300
200
100
0
450
400
350
300
250
200
150
100
50
80
70
60
50
40
30
140
120
100
80
tf
t
d(off) - - - -
TJ = 125ºC, VGS = 10V
DS = 27.5V
t f
t
d(off) - - - -
RG = 1ꢀ, VGS = 10V
DS = 27.5V
I D = 200A
V
V
I D = 100A
TJ = 25ºC, 125ºC
60
40
1
2
3
4
5
6
7
8
9
10
40
60
80
100
120
140
160
180
200
ID - Amperes
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH440N055T2
IXTT440N055T2
Fig. 19. Maximum Transient Thermal Impedance
dfafas
0.300
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_440N055T2(98)12-11-09
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