IXYF30N450 [IXYS]
Insulated Gate Bipolar Transistor,;
| 型号： | IXYF30N450 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总4页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
High Voltage XPTTM IGBT
VCES = 4500V
IC110 = 17A
VCE(sat) 3.9V
IXYF30N450
(Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
VCES
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
4500
4500
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
1
2
Isolated Tab
5
IC25
IC110
ICM
TC = 25°C
23
17
A
A
A
1 = Gate
2 = Emitter
5 = Collector
TC = 110°C
TC = 25°C, 1ms
190
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 15
Clamped Inductive Load
ICM = 90
3600
A
V
PC
TC = 25°C
230
W
Features
TJ
-55 ... +150
150
°C
°C
°C
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
TJM
Tstg
-55 ... +150
4000V~ Electrical Isolation
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
FC
Mounting Force
20..120 / 4.5..27
Nm/lb.in.
VISOL
Weight
50/60Hz, 1 Minute
4000
5
V~
g
Advantages
Low Gate Drive Requirement
High Power Density
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Applications
Min.
4500
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
5.0
V
25 μA
μA
Note 2, TJ = 100°C
100
IGES
VCE = 0V, VGE = ± 25V
±200 nA
AC Switches
VCE(sat)
IC = 30A, VGE = 15V, Note 1
3.2
4.5
3.9
V
V
TJ = 125°C
© 2013 IXYS CORPORATION, All Rights Reserved
DS100569(11/13)
IXYF30N450
ISOPLUS i4-PakTM (HV) Outline
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfS
IC = 30A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
11
18
S
Cies
Coes
Cres
1840
83
pF
pF
pF
35
Qg
88
11
40
nC
nC
nC
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 1000V
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
38
318
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
Pin 1 = Gate
IC = 30A, VGE = 15V
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
168
VCE = 960V, RG = 15
1220
42
590
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 30A, VGE = 15V
180
VCE = 960V, RG = 15
1365
RthJC
RthCS
0.54 °C/W
°C/W
0.15
Notes:
1. Pulse test, t < 300s, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute
a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYF30N450
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
60
50
40
30
20
10
0
280
240
200
160
120
80
V
= 25V
GE
V
= 25V
GE
19V
15V
13V
11V
23V
21V
19V
17V
15V
9V
13V
11V
7V
5V
9V
40
7V
30
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
60
50
40
30
20
10
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 25V
GE
19V
15V
13V
11V
V
= 15V
GE
I
= 60A
C
9V
7V
I
= 30A
C
I
= 15A
C
5V
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
8
7
6
5
4
3
2
80
70
60
50
40
30
20
10
0
T
J
= 25ºC
T
J
= - 40ºC
25ºC
125ºC
I
= 60A
C
30A
15A
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
6
7
8
9
10
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXYF30N450
Fig. 7. Transconductance
Fig. 8. Gate Charge
30
25
20
15
10
5
16
14
12
10
8
VCE = 1000V
C = 30A
IG = 10mA
T
J
= - 40ºC
I
25ºC
125ºC
6
4
2
0
0
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
10,000
100
= 1 MHz
f
90
80
70
C
ies
1,000
60
50
40
C
oes
100
30
= 125ºC
T
J
20
= 15Ω
R
G
C
res
10
dv / dt < 10V / ns
0
10
1000
1500
2000
2500
3000
3500
4000
4500
0
10
15
20
25
30
35
40
500
5
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: Y_30N450(H7-645) 10-31-13
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