MIXA20W1200TML [IXYS]
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-24;
| 型号： | MIXA20W1200TML |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 局域网 栅 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIXA20W1200TML
VCES = 1200 V
Six-Pack
XPT IGBT
IC25
= 28 A
VCE(sat) = 1.8 V
Part name (Marking on product)
MIXA20W1200TML
10, 23
14
18
17
22
21
8
13
11, 12
15, 16
19, 20
NTC
E72873
Pin configuration see outlines.
7
4
3
2
1
6
5
9, 24
Features:
Application:
Package:
• High level of integration
• Rugged XPT design
(Xtreme light Punch Through) results in: • Washing machines
• AC motor drives
• Pumps, Fans
• E1 package
• Assembly height is 17.1 mm
• Insulated base plate
- short circuit rated for 10 µsec.
- very low gate charge
• Air-conditioning system
• Inverter and power supplies
• Pins suitable for wave soldering and
PCB mounting
- square RBSOA @ 3x IC
- low EMI
• UL registered E72873
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110118b
1 - 6
MIXA20W1200TML
Ouput Inverter T1 - T6
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
28
20
A
A
total power dissipation
Ptot
TC = 25°C
100
2.1
W
collector emitter saturation voltage
VCE(sat)
IC = 16 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
1.8
2.1
V
V
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
5.4
5.9
6.5
0.1
V
TVJ = 25°C
TVJ = 125°C
mA
mA
0.1
gate emitter leakage current
total gate charge
IGES
VGE = 20 V
500
nA
nC
QG(on)
VCE = 600 V; VGE = 15 V; IC = 15 A
48
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
70
40
250
100
1.55
1.7
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 15 A
VGE = 15 V; RG = 56 W
TVJ = 125°C
reverse bias safe operating area
RBSOA
VGE
=
15 V; RG = 56 W; VCEK = 1200 V
45
A
TVJ = 125°C
short circuit safe operating area
ISC
VCE = 900 V; VGE = 15 V;
TVJ = 125°C
60
A
(SCSOA)
RG = 56 W; tp = 10 µs; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
1.26 K/W
K/W
0.42
Output Inverter D1 - D6
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitve reverse voltage
forward current
TVJ = 25°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
33
22
A
A
forward voltage
VF
IF = 20 A; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2
V
V
reverse recovery charge
max. reverse recovery current
reverse recovery time
Qrr
IRM
trr
3
20
350
0.7
µC
A
ns
mJ
VR = 600 V
diF /dt = -400 A/µs
IF = 20 A; VGE = 0 V
TVJ = 125°C
reverse recovery energy
Erec
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
1.5 K/W
K/W
0.5
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110118b
2 - 6
MIXA20W1200TML
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max. Unit
resistance
R25
B25/50
TC = 25°C
4.75
5.0
3375
5.25
kW
K
100000
10000
1000
100
R
[Ω]
10
0
25
50
75
100
125
150
TC [°C]
Typ. NTC resistance vs. temperature
Module
Symbol
Ratings
typ. max. Unit
Definitions
Conditions
min.
operating temperature
max. virtual junction temperature
storage temperature
TVJ
TVJM
Tstg
-40
125
150
125
°C
°C
°C
-40
isolation voltage
VISOL
CTI
FC
IISOL < 1 mA; 50/60 Hz
2500
-
V~
comparative tracking index
mounting force
40
80
N
creep distance on surface
strike distance through air
dS
dA
12.7
12.7
mm
mm
Weight
40
g
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110118b
3 - 6
MIXA20W1200TML
Circuit Diagram
10, 23
18
17
22
21
14
13
8
7
11, 12
15, 16
19, 20
NTC
4
3
2
1
6
5
9, 24
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Part number
M = Module
I = IGBT
X = XPT
A = standard
XXXXXX..... YWWx XXX...
20 = Current Rating [A]
W = 6-Pack
1200 = Reverse Voltage [V]
T = NTC
Logo
Part name
Date Code Prod. Code UL
ML = E1-Pack
Ordering
Part Name
Marking on Product Delivering Mode Base Qty Ordering Code
MIXA20W1200TML Box 10 510162
Standard
MIXA 20 W 1200 TML
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110118b
4 - 6
MIXA20W1200TML
IGBT T1 - T6
30
30
25
20
15
10
5
13 V
VGE = 15 V
11 V
V
GE = 15 V
17 V
19 V
25
20
15
10
5
T
VJ = 125°C
TVJ = 25°C
IC
IC
TVJ = 125°C
[A]
[A]
9 V
0
0
0
1
2
3
0
1
2
3
4
5
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
15
10
5
30
25
20
15
10
5
IC = 15 A
VCE = 600 V
IC
VGE
[A]
[V]
TVJ = 125°C
TVJ = 25°C
0
0
0
10
20
30
40
50
60
5
6
7
8
9
10 11 12 13
QG [nC]
VGE [V]
Fig. 3 Typ. tranfer characteristics
Fig. 4 Typ. turn-on gate charge
4
3
2
2.8
2.4
2.0
1.6
1.2
RG
VCE = 600 V
VGE 15 V
TVJ = 125°C
=
56 Ω
IC =
VCE = 600 V
VGE 15 V
15 A
Eon
Eoff
=
=
TVJ = 125°C
E
E
[mJ]
[mJ]
Eoff
Eon
1
0
0
5
10 15 20 25 30 35
40
60
80 100 120 140 160
IC [A]
RG [Ω]
Fig. 5 Typ. switching energy vs. collector current
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110118b
5 - 6
MIXA20W1200TML
Diode D1 - D6
40
5
4
3
2
1
TVJ = 125°C
VR = 600 V
30
40 A
20 A
IF
Qrr
20
[A]
[µC]
TVJ = 125°C
10
TVJ
=
25°C
10 A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200
300
400
500
600
700
VF [V]
diF /dt [A/µs]
Fig. 7 Typ. Forward current versus VF
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt
35
30
25
20
15
10
5
700
600
500
400
300
200
100
0
40 A
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
20 A
10 A
IRR
trr
40 A
[A]
[ns]
20 A
10 A
0
200
300
400
500
600
700
200
300
400
500
600
700
diF /dt [A/µs]
diF /dt [A/µs]
Fig. 10 Typ. recovery time trr versus di/dt
Fig. 9 Typ. peak reverse current IRM vs. di/dt
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1
TVJ = 125°C
VR = 600 V
Diode
IGBT
40 A
20 A
Erec
ZthJC
IGBT
FRD
[mJ]
[K/W]
Ri
Ri
ti
ti
0.1
0.01
1 0.252 0.0015 0.461 0.0015
10 A
2 0.209 0.03
3 0.541 0.03
4 0.258 0.08
0.291 0.03
0.423 0.03
0.326 0.08
200
300
400
500
600
700
0.001
0.01
0.1
1
10
diF /dt [A/µs]
Fig. 11 Typ. recovery energy Erec versus di/dt
tp [s]
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110118b
6 - 6
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