MUBW25-12A7 [IXYS]
Converter - Brake - Inverter Module; 转换器 - 制动 - 逆变器模块
| 型号： | MUBW25-12A7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Converter - Brake - Inverter Module |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUBW 25-12 A7
Converter - Brake - Inverter Module (CBI2)
22
21
T1
16
D1
T5
20
D7
T3
D5
D3
D11 D13
D15
18
17
7
15
19
1
2
3
4
6
5
T4
T2
T7
T6
13
D2
D4
D6
D14
D16
D12
11
10
14
24
12
23
8
9
NTC
ThreePhase
Rectifier
BrakeChopper
ThreePhase
Inverter
VRRM = 1600V
IDAVM = 36 A
IFSM = 300 A
VCES = 1200 V VCES = 1200 V
IC25 = 20 A
VCE(sat) = 2.9 V
IC25 = 50 A
VCE(sat) = 2.2 V
Application: AC motor drives with
Input Rectifier Bridge D11 - D16
●
Input from single or three phase grid
Three phase synchronous or
Symbol
VRRM
Conditions
Maximum Ratings
●
asynchronous motor
electric braking operation
1600
V
●
IFAV
IDAVM
IFSM
TC = 80°C; sine 180°
TC = 80°C; rectangular; d = 1/3
TVJ = 25°C; t = 10 ms; sine 50 Hz
25
24
300
A
A
A
Features
●
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
Ptot
TC = 25°C
100
W
●
behaviour
NPT IGBT technology with low
●
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
●
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
VF
IR
IF = 25 A; TVJ = 25°C
TVJ = 125°C
1.4
1.4
1.7
V
V
●
VR = VRRM; TVJ = 25°C
TVJ = 125°C
0.15 mA
mA
●
1.2
1
trr
VR = 100 V;IF = 15 A; di/dt = -15 A/µs
(per diode)
µs
RthJC
1.3 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1 - 8
MUBW 25-12 A7
Output Inverter T1 - T6
Equivalent Circuits for Simulation
Conduction
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
±
VGES
VGEM
Continuous
Transient
20
30
V
V
±
D11 - D16
IC25
IC80
TC = 25°C
TC = 80°C
50
35
A
A
Rectifier Diode (typ. at TJ = 125°C)
V0 = 1.16 V; R0 = 9 mΩ
±
RBSOA
VGE = 15 V; R = 47 Ω; TVJ = 125°C
ICM
=
50
A
µs
W
Clamped inducGtive load; L = 100 µH
VCEK ≤ VCES
T1 - T6 / D1 - D6
±
tSC
(SCSOA)
VCE = VCES; VGE = 15 V; RG = 47 Ω; TVJ = 125°C
non-repetitive
10
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.38 V; R0 = 46 mΩ
Ptot
TC = 25°C
225
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.32 V; R0 = 30 mΩ
T7 / D7
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.32 V; R0 = 131 mΩ
min.
typ. max.
VCE(sat)
IC = 25 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.2
2.5
2.7
V
V
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.39 V; R0 = 56 mΩ
VGE(th)
ICES
IC = 1 mA; VGE = VCE
4.5
6.5
V
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.9 mA
mA
Thermal Response
0.9
±
IGES
VCE = 0 V; VGE
=
20 V
200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
100
70
500
70
2.8
3.8
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
CE = 600 V; IC = 25 A
V
±
VGE = 15 V; RG = 47 Ω
D11 - D16
Rectifier Diode (typ.)
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 25 A
1650
120
pF
nC
Cth1 = 0.106 J/K; Rth1 = 1.06 K/W
Cth2 = 0.79 J/K; Rth2 = 0.239 K/W
RthJC
(per IGBT)
0.55 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
Cth1 = 0.201 J/K; Rth1 = 0.419 K/W
Cth2 = 1.25 J/K; Rth2 = 0.131 K/W
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
Free Wheeling Diode (typ.)
Cth1 = 0.065 J/K; Rth1 = 1.758 K/W
Cth2 = 0.639 J/K; Rth2 = 0.342 K/W
IF25
IF80
TC = 25°C
TC = 80°C
28
18
A
A
T7 / D7
IGBT (typ.)
Symbol
VF
Conditions
Characteristic Values
Cth1 = 0.09 J/K; Rth1 = 0.954 K/W
Cth2 = 0.809 J/K; Rth2 = 0.246 K/W
min.
typ. max.
IF = 15 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
3.1
2.1
V
V
Free Wheeling Diode (typ.)
Cth1 = 0.043 J/K; Rth1 = 2.738 K/W
Cth2 = 0.54 J/K; Rth2 = 0.462 K/W
IRM
trr
IF = 25 A; di /dt = -400A/µs; TVJ = 125°C
16
A
VR = 600 V;FVGE = 0 V
130
ns
RthJC
(per diode)
2.1 K/W
© 2001 IXYS All rights reserved
2 - 8
MUBW 25-12 A7
Brake Chopper T7
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
±
±
VGES
VGEM
Continuous
Transient
20
30
V
V
IC25
IC80
TC = 25°C
TC = 80°C
20
15
A
A
±
RBSOA
VGE = 15 V; R = 82 Ω; TVJ = 125°C
ICM
=
20
A
µs
W
Clamped inducGtive load; L = 100 µH
VCEK ≤ VCES
±
tSC
(SCSOA)
VCE = 720 V; VGE = 15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
10
Ptot
TC = 25°C
105
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 15 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.9
3.3
3.3
V
V
VGE(th)
ICES
IC = 0.4 mA; VGE = VCE
4.5
6.5
V
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.5 mA
mA
0.3
±
IGES
VCE = 0 V; VGE
=
20 V
200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
50
40
290
60
1.8
1.6
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 15 A
±
V
GE = 15 V; RG = 82 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MH z
VCE = 600 V; VGE = 15 V; IC = 15 A
600
45
pF
nC
RthJC
1.2 K/W
Brake Chopper D7
Symbol
VRRM
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
17
11
A
A
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IR
IF = 15 A; TVJ = 25°C
TVJ = 125°C
3.2
2.3
V
V
VR = VRRM; TVJ = 25°C
TVJ = 125°C
0.06 mA
mA
0.07
IRM
trr
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 600 V
13
110
A
ns
RthJC
3.2 K/W
© 2001 IXYS All rights reserved
3 - 8
MUBW 25-12 A7
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ. max.
R25
T = 25°C
4.75
5.0 5.25 kΩ
B25/50
3375
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
TJM
Tstg
Operating
-40...+125
150
-40...+125
°C
°C
°C
VISOL
Md
I
ISOL ≤ 1 mA; 50/60 Hz
2500
V~
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ. max.
Rpin-chip
5
mΩ
dS
dA
Creepage distance on surface
Strike distance in air
6
6
mm
mm
RthCH
with heatsink compound
0.02
180
K/W
g
Weight
Dimensions in mm (1 mm = 0.0394")
© 2001 IXYS All rights reserved
4 - 8
MUBW 25-12 A7
Input Rectifier Bridge D11 - D16
50
A
100
A
103
A2s
50Hz, 80% VRRM
TVJ= 45°C
I2t
40
80
IFSM
TVJ= 125°C
TVJ= 25°C
IF
30
20
10
0
60
40
20
0
TVJ= 45°C
102
TVJ= 150°C
TVJ= 150°C
101
V
0.0
0.4
0.8
1.2
VF
1.6
2.0
0.001
0.01
0.1
t
1
1
2
3
4
5 6 7 10
ms
t
s
Fig. 1 Forward current versus voltage
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
drop per diode
500
60
A
W
50
400
Ptot
Id(AV)
RthA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
40
30
20
10
0
300
200
100
0
2 K/W
5 K/W
0
20
40
60
80
Id(AV)M
0
20 40 60 80 100 120 140
Tamb
0
20 40 60 80 100 120 140
TC
A
°C
°C
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin
Fig. 5 Max. forward current versus
case temperature
1
8
0
°
1.6
K/W
1.2
ZthJC
0.8
0.4
0.0
DWFN9-16
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case
© 2001 IXYS All rights reserved
5 - 8
MUBW 25-12 A7
Output Inverter T1 - T6 / D1 - D6
80
80
VGE = 17V
A
A
VGE = 17V
15V
13V
IC
15V
13V
IC
60
60
40
20
0
11V
11V
40
20
0
9V
9V
TVJ = 125°C
TVJ = 25°C
V
6 7
V
7
0
1
2
3
4
5
6
0
1
2
3
4
5
VCE
VCE
Fig. 7 Typ. output characteristics
Fig. 8 Typ. output characteristics
50
80
A
A
IF
60
IC
30
20
10
0
TVJ = 125°C
TVJ = 25°C
40
20
0
TVJ = 125°C
TVJ = 25°C
VCE = 20V
V
0
1
2
3
4
4
6
8
10
12
VGE
14 V 16
VF
Fig. 9 Typ. transfer characteristics
Fig. 10 Typ. forward characteristics of
free wheeling diode
50
A
30
20
10
0
200
20
trr
V
ns
trr
15
IRM
VGE
120
80
40
0
10
5
TVJ = 125°C
VR = 600V
IF = 15A
VCE = 600V
IC 25A
=
IRM
MUBW2512A7
0
0
200
400
600
-di/dt
A/µs 1000
0
40
80
120 nC 160
QG
Fig. 11 Typ. turn on gate charge
Fig. 12 Typ. turn off characteristics of
free wheeling diode
© 2001 IXYS All rights reserved
6 - 8
MUBW 25-12 A7
Output Inverter T1 - T6 / D1 - D6
150
ns
600
15
12
VCE = 600V
VGE = ±15V
mJ
mJ
ns
RG = 47Ω
td(off)
V
CE = 600V
Eoff
TVJ = 125°C
Eon
t
t
VGE = ±15V
RG = 47Ω
TVJ = 125°C
100
50
0
400
10
8
4
0
Eoff
td(on)
tr
5
200
Eon
tf
0
60
0
A
0
20
40
IC
0
20
40
IC
A
60
Fig. 13 Typ. turn on energy and switching
times versus collector current
Fig. 14 Typ. turn off energy and switching
times versus collector current
160
td(on)
800
4
mJ
3
8
td(off)
mJ
ns
ns
Eoff
Eon
120
6
4
2
0
600
t
Eoff
t
Eon
tr
2
1
0
80
400
200
0
VCE = 600V
VGE = ±15V
IC = 25
VCE = 600V
40
0
VGE = ±15V
IC = 25A
TVJ = 125°C
TVJ = 125°C
tf
Ω
0
20
40
60
80 Ω 100
0
20
40
60
RG
80
100
RG
Fig. 15 Typ. turn on energy and switching
times versus gate resistor
Fig.16 Typ. turn off energy and switching
times versus gate resistor
10
60
A
diode
IGBT
K/W
1
ZthJC
ICM
40
0.1
0.01
0.001
20
0
single pulse
RG = 47 Ω
TVJ = 125°C
MUBW2512A7
0.0001
0.00001 0.0001 0.001 0.01
0.1
1
s
10
0
200 400 600 800 1000 1200 1400V
VCE
t
Fig. 17 Reverse biased safe operating area
RBSOA
Fig. 18 Typ. transient thermal impedance
© 2001 IXYS All rights reserved
7 - 8
MUBW 25-12 A7
Brake Chopper T7 / D7
30
A
30
20
15
10
5
A
IF
IC
20
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
15
10
5
VGE = 15V
0
0
0
1
2
3
4
5
V
6
0
1
2
3
4
V
VF
VCE
Fig. 19 Typ. output characteristics
Fig. 20 Typ. forward characteristics of
free wheeling diode
2.5
mJ
2.0
500
ns
1.2
mJ
0.8
600
ns
VCE = 600V
VGE = ±15V
RG = 82Ω
Eoff
400
Eoff
Eoff
td(off)
t
t
TVJ = 125°C
td(off)
400
VCE = 600V
VGE = ±15V
1.5
1.0
0.5
0.0
300
200
100
0
IC
= 15A
TVJ = 125°C
Eoff
0.4
0.0
200
tf
tf
0
0
4
8
12
16
A
20
0
20
40
60
80
100 120 Ω 140
IC
RG
Fig. 21 Typ. turn off energy and switching
times versus collector current
Fig. 22 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
diode
IGBT
Temperature Sensor NTC
10000
ZthJC
0.1
Ω
R
0.01
0.001
1000
single pulse
MUBW2512A7
0.0001
100
0.00001 0.0001 0.001 0.01
0.1
1
s
10
0
25
50
75
100
125 °C 150
T
t
Fig. 23 Typ. transient thermal impedance
Fig. 24 Typ. thermistorresistance versus
temperature
© 2001 IXYS All rights reserved
8 - 8
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