KTA1046_11 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
| 型号： | KTA1046_11 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 文件： | 总2页 (文件大小：687K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1046
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
INDUSTRIAL USE.
GENERAL PURPOSE APPLICATION.
FEATURES
· Low Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.
· Complementary to KTC2026.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
-60
-60
V
-7
V
-3
A
IB
Base Current
-0.5
2
A
Ta=25℃
Tc=25℃
Collector Power
Dissipation
PC
W
20
Tj
Junction Temperature
150
-55∼ 150
℃
℃
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
-
-
-
-1
-1
-
μA
μA
V
IEBO
Emitter Cut-off Current
-
-
V(BR)CEO
Collector-Emitter Breakdown Voltage
-60
100
20
-
hFE(1) (Note) VCE=-5V, IC=-0.5A
-
300
-
DC Current Gain
hFE(2)
VCE(sat)
VBE
VCE=-5V, IC=-3A
-
IC=-2A, IB=-0.2A
Collector Emitter Saturation Voltage
Base-Emitter Voltage
-0.25
-0.7
30
45
-1.0
-1.0
-
V
V
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
-
fT
Transition Frequency
-
MHz
pF
Cob
Collector Output Capacitance
-
-
ton
tstg
tf
Turn-on Time
-
-
-
0.4
1.7
0.5
-
-
-
Storage Time
Fall Time
Switching Time
μS
Note : hFE(1) Classification Y:100∼ 200, GR:150∼ 300
2011. 7. 13
Revision No : 4
1/2
KTA1046
2011. 7. 13
Revision No : 4
2/2
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KEC
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