KRF7410 [KEXIN]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | KRF7410 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
HEXFET Power MOSFET
KRF7410
Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VDS
ID
Rating
Unit
V
Drain- Source Voltage
-20
-16
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
Pulsed Drain Current *1
A
ID
-13
IDM
PD
-65
2.5
W
W
Power Dissipation *2
Power Dissipation *2
Linear Derating Factor
Gate-to-Source Voltage
@Ta= 25
@Ta = 70
PD
1.6
20
mW/
V
VGS
8
-55 to + 150
50
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
TJ, TSTG
R
JA
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on 1 in square Cu board, t 10sec.
1
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SMD Type
IC
KRF7410
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0V, ID = -250
Min
-12
Typ
Max
Unit
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V(BR)DSS
A
0.006
V(BR)DSS/ TJ ID = -1mA,Reference to 25
VGS = -4.5V, ID = -16A*1
V/
7
9
Static Drain-to-Source On-Resistance
RDS(on)
VGS = -2.5V, ID = -13.6A*1
VGS = -1.8V, ID = -11.5A*1
13
-0.9
Gate Threshold Voltage
VGS(th)
gfs
-0.4
55
V
S
VDS = VGS, ID = -250
A
Forward Transconductance
VDS = -10V, ID = -16A*1
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70
VGS = -8V
-1.0
-25
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
-100
100
IGSS
nA
VGS = 8V
Qg
Qgs
Qgd
td(on)
tr
ID = -16A
91
18
nC
ns
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = -9.6V
VGS = -4.5V,*1
VDD = -6V,VGS=-4.5V
ID = -1.0A
25
13
20
18
12
Turn-Off Delay Time
Fall Time
td(off)
tf
271
200
8676
2344
1604
407
300
RG = 6
RD = 6 *1
Input Capacitance
Ciss
Coss
Crss
VGS = 0V
pF
A
Output Capacitance
VDS = -10V
Reverse Transfer Capacitance
f = 1.0MHz
IS
-2.5
-65
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD
trr
-1.2
145
201
V
ns
C
TJ = 25 , IS = -2.5A, VGS = 0V*1
TJ = 25 , IF =-2.5A
97
Qrr
134
di/dt = 100A/ s*1
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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