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IXFP4N85XM [LITTELFUSE]

Power Field-Effect Transistor,;
IXFP4N85XM
型号： IXFP4N85XM
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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Preliminary Technical Information  
X-Class HiPERFET  
Power MOSFET  
VDSS = 850V  
ID25 = 3.5A  
RDS(on) 2.5  
IXFP4N85XM  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
850  
850  
V
V
G
VDGR  
TJ = 25C to 150C, RGS = 1M  
Isolated Tab  
D = Drain  
D
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
ID25  
IDM  
TC = 25C, Limited by TJM  
TC = 25C, Pulse Width Limited by TJM  
3.5  
A
A
10.0  
IA  
TC = 25C  
TC = 25C  
2
A
EAS  
125  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
35  
V/ns  
W
Features  
International Standard Package  
Plastic Overmolded Tab  
Low RDS(ON) and QG  
2500V~ Electrical Isolation  
Avalanche Rated  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Low Package Inductance  
VISOL  
50/60 Hz, 1 Minute  
Mounting Torque  
2500  
V~  
Advantages  
Md  
1.13 / 10  
2.5  
Nm/lb.in  
g
High Power Density  
Easy to Mount  
Weight  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
850  
V
V
3.0  
5.5  
100 nA  
Robotics and Servo Controls  
IDSS  
5 A  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 2A, Note 1  
2.5  
DS100782A(10/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP4N85XM  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220  
(IXFP...M)  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 2A, Note 1  
Gate Input Resistance  
1.2  
2.0  
S
RGi  
3
Ciss  
Coss  
Crss  
247  
305  
5
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
Effective Output Capacitance  
Co(er)  
Co(tr)  
27  
60  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
13  
27  
28  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 2A  
V
RG = 30(External)  
Qg(on)  
Qgs  
7.0  
2.3  
3.3  
nC  
nC  
nC  
Terminals: 1 - Gate  
2 - Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A  
3 - Source  
Qgd  
RthJC  
RthCS  
3.57 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
4
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
16  
1.4  
V
trr  
QRM  
IRM  
170  
770  
9
ns  
IF = 2A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFP4N85XM  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6
5
4
3
2
1
0
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
0
1
2
3
4
5
6
7
8
9
10  
11  
0
4
8
12  
16  
20  
24  
28  
32  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 4A  
D
I
= 2A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.  
Drain Current  
Fig. 6. Input Admittance  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
5
4
3
2
1
0
V
= 10V  
GS  
T = 125oC  
J
T
J
= 125oC  
25oC  
- 40oC  
T = 25oC  
J
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
0
1
2
3
4
5
6
ID - Amperes  
VGS - Volts  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP4N85XM  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
18  
16  
14  
12  
10  
8
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
6
4
T
= 25oC  
J
2
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
ID - Amperes  
VSD - Volts  
Fig. 9. Capacitance  
Fig. 8. Gate Charge  
10000  
1000  
100  
10  
10  
8
V
= 425V  
DS  
I
I
= 2A  
D
G
C
C
C
= 10mA  
iss  
oss  
rss  
6
4
1
2
= 1 MHz  
f
0.1  
0
1
10  
100  
1000  
0
1
2
3
4
5
6
7
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Output Capacitance Stored Energy  
Fig. 12. Forward-Bias Safe Operating Area  
100  
10  
9
8
7
6
5
4
3
2
1
0
100μs  
25μs  
1ms  
10ms  
100ms  
DC  
1
R
Limit  
)
DS(  
on  
0.1  
0.01  
T = 150oC  
= 25oC  
J
T
C
Single Pulse  
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFP4N85XM  
Fig. 13. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_4N85X(S2-D901) 1-23-17  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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