MDP12N50FTH [MGCHIP]
N-Channel MOSFET 500V, 11.5A, 0.75ohm;
| 型号： | MDP12N50FTH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 500V, 11.5A, 0.75ohm |
| 文件： | 总8页 (文件大小：1389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDP12N50F/MDF12N50F
N-Channel MOSFET 500V, 11.5A, 0.75Ω
General Description
Features
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
VDS = 500V
ID = 11.5A
@ VGS = 10V
RDS(ON)
≤
0.75Ω @ VGS = 10V
Applications
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Power Supply
PFC
High Current, High Speed Switching
G
TO-220
TO-220F
MDP Series
MDF Series
`
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
MDP12N50
MDF12N50
Unit
V
Drain-Source Voltage
VDSS
VGSS
500
±30
Gate-Source Voltage
V
TC=25oC
TC=100oC
.11.5
7.0
11.5*
7.0*
46*
A
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
ID
A
IDM
PD
46
A
TC=25oC
165
1.33
42
W
W/ oC
Derate above 25 oC
0.32
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
EAR
dv/dt
EAS
16.5
4.5
mJ
V/ns
mJ
460
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
MDP12N50
62.5
MDF12N50
Unit
RθJA
RθJC
62.5
3.0
oC/W
0.75
1
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
MDP12N50FTH
MDF12N50FTH
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Halogen Free
TO-220F
Tube
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 5.75A
VDS = 30V, ID = 5.75A
500
2.5
-
-
-
V
-
4.5
10
-
-
μA
nA
Ω
IGSS
-
100
0.75
-
RDS(ON)
gfs
0.59
5
-
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
20
7.0
7.5
1010
2.7
125
47
26
-
Gate-Source Charge
Gate-Drain Charge
VDS = 400V, ID = 11.5A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
-
Input Capacitance
1300
4.0
165
100
80
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
35
VGS = 10V, VDS = 250V, ID = 11.5A,
ns
RG = 25Ω(3)
Turn-Off Delay Time
Fall Time
td(off)
tf
55
120
60
28
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
IS
VSD
trr
-
-
-
-
11.5
-
A
V
IS = 11.5A, VGS = 0V
1.4
100
ns
μC
IF = 11.5A, dl/dt = 100A/μs(3)
Body Diode Reverse Recovery
Charge
Qrr
2.61
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤11.5A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C
DD
g
4. L=6.3mH, IAS=11.5A, VDD=50V, R =25Ω, Starting TJ=25°C,
g
2
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
12
11
10
9
1.2
1.0
0.8
0.6
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
Notes
=10.0V
=15.0V
8
1. 250㎲ Pulse Test
2. TC=25℃
7
VGS=10.0V
6
5
VGS=20V
4
3
2
1
5
10
15
20
0
5
10
15
20
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
3.0
※ Notes :
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
1. VGS = 10 V
2.5
2. ID = 5.75A
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
1. VGS = 0 V
* Notes ;
2.250s Pulse test
1. Vds=30V
10
10
150℃
25℃
150℃
25℃
-55℃
1
1
0.0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS [V]
VSD, Source-Drain Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
10
8
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note : ID = 11.5A
Coss
100V
250V
Ciss
400V
6
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
4
Crss
600
2
400
200
0
0
1
10
0
5
10
15
20
25
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
102
Operation in This Area
is Limited by R DS(on)
Operation in This Area
10s
is Limited by R DS(on)
10 s
100 s
100 s
101
100
101
100
1 ms
1 ms
10 ms
100 ms
1s
10 ms
DC
100 ms
DC
10-1
10-1
Single Pulse
TJ=Max rated
TC=25℃
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1
10-2
10-1
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Safe Operating Area
MDF12N50F(TO-220F)
Fig.9 Maximum Safe Operating Area
MDP12N50F(TO-220)
100
101
100
10-1
10-2
D=0.5
D=0.5
0.2
0.2
0.1
10-1
0.1
0.05
0.05
0.02
0.02
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
※ Notes :
Duty Factor, D=t1/t2
0.01
0.01
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
JC
RΘ =0.75℃/W
RΘ =3.0℃/W
JC
JC
single pulse
10-3
single pulse
10-3
10-2
10-5
10-4
10-2
10-1
100
101
10-5
10-4
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
t1, Rectangular Pulse Duration [sec]
Fig.12 Transient Thermal Response Curve
MDF12N50F(TO-220F)
Fig.11 Transient Thermal Response Curve
MDP12N50F(TO-220)
4
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
12000
10000
8000
6000
4000
2000
0
single Pulse
RthJC = 0.75℃/W
TC = 25℃
single Pulse
RthJC = 3.0℃/W
TC = 25℃
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Pulse Width (s)
Fig.13 Single Pulse Maximum Power
Dissipation MDP12N50F(TO-220)
Fig.14 Single Pulse Maximum Power
Dissipation MDF12N50F(TO-220F)
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Fig.15 Maximum Drain Current vs. Case
Temperature
5
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
6
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
A
b
b1
C
D
E
16.13
10.71
e
2.54
F
G
L
L1
Q
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Q1
￠R
7
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
8
Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
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