APTGF50H60T3 [MICROSEMI]
Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, MODULE-25;
| 型号： | APTGF50H60T3 |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, MODULE-25 晶体 晶体管 电动机控制 双极性晶体管 局域网 |
| 文件： | 总6页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF50H60T3G
VCES = 600V
Full - Bridge
IC = 50A @ Tc = 80°C
NPT IGBT Power Module
Application
13 14
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
CR1
22
CR3
11
10
18
19
Features
Non Punch Through (NPT) Fast IGBT®
7
8
•
-
-
-
-
-
-
-
-
Low voltage drop
23
Low tail current
Q2
29
Q4
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
CR2
CR4
26
27
4
3
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
30
31
32
-
15
16
R1
•
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
29
30
16
Benefits
15
•
Outstanding performance at high frequency
operation
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
31
32
14
13
2
3
4
7
8
10 11
12
•
•
•
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
65
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
50
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
230
±20
250
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
100A @ 500V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 6
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APTGF50H60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 600V
500
1.7
4
2.0
2.2
2.45
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 50A
VGE = VCE , IC = 1mA
6
400
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Input Capacitance
2200
VGE = 0V
VCE = 25V
f = 1MHz
pF
Output Capacitance
323
200
166
20
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 50A
nC
100
40
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
9
120
VBus = 400V
ns
IC = 50A
RG = 2.7Ω
12
42
Inductive Switching (125°C)
VGE = 15V
10
130
21
ns
VBus = 400V
IC = 50A
Tf
Fall Time
RG = 2.7Ω
VGE = 15V
Tj = 125°C
VBus = 400V
Eon
Turn-on Switching Energy
0.5
mJ
IC = 50A
Eoff
Turn-off Switching Energy
Tj = 125°C
RG = 2.7Ω
1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
600
V
µA
A
Tj = 25°C
VR=600V
250
500
Tj = 125°C
DC Forward Current
Tc = 70°C
IF = 30A
30
1.6
1.9
1.4
1.8
IF = 60A
VF
Diode Forward Voltage
V
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
85
160
130
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 400V
di/dt =200A/µs
Qrr
nC
Tj = 125°C
700
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APTGF50H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.5
RthJC
Junction to Case Thermal Resistance
°C/W
1.2
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGF50H60T3G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
150
100
50
0
150
100
50
TJ=-55°C
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
TJ=-55°C
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
3
0
0
1
2
3
4
0
1
2
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
150
125
100
75
18
16
14
12
10
8
250µs Pulse Test
< 0.5% Duty cycle
VCE=120V
VCE=300V
IC = 50A
J = 25°C
T
VCE =480V
6
50
TJ=125°C
4
2
25
TJ=-55°C
TJ=25°C
0
0
0
25
50
75 100 125 150 175 200
0
1
2
3
4
5
6
7
8
9
10
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
8
7
6
5
4
3
2
1
0
4
3.5
3
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=100A
2.5
2
1.5
1
Ic=50A
Ic=25A
Ic=25A
250µs Pulse Test
< 0.5% Duty cycle
0.5
0
V
GE = 15V
6
8
10
12
14
16
-50 -25
0
25
50
75
100 125
V
GE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
80
70
60
50
40
30
20
10
0
1.20
1.10
1.00
0.90
0.80
0.70
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
4 - 6
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APTGF50H60T3G
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
60
50
40
30
20
200
175
150
125
100
75
VGE = 15V
VGE=15V,
TJ=125°C
Tj = 125°C
V
R
CE = 400V
G = 2.7Ω
VGE=15V,
TJ=25°C
VCE = 400V
G = 2.7Ω
R
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VCE = 400V
VCE = 400V, VGE = 15V, RG = 2.7Ω
R
G = 2.7Ω
TJ = 125°C
VGE=15V,
TJ=125°C
TJ = 25°C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
I
CE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
2.5
2
2
VCE = 400V
TJ=125°C,
VGE=15V
VCE = 400V
VGE = 15V
TJ = 125°C
R
G = 2.7Ω
1.5
1
RG = 2.7Ω
1.5
1
0.5
0
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
120
100
80
60
40
20
0
VCE = 400V
V
GE = 15V
2.5
2
TJ= 125°C
Eon, 50A
Eoff, 50A
1.5
1
0.5
0
Eon, 50A
0
200
400
600
0
5
10
15
20
25
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
5 - 6
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APTGF50H60T3G
Capacitance vs Collector to Emitter Voltage
10000
Operating Frequency vs Collector Current
240
200
160
120
80
VCE = 400V
D = 50%
RG = 2.7Ω
Cies
T = 125°C
J
TC= 75°C
1000
100
Coes
ZCS
ZVS
60
hard
40
switching
Cres
0
0
10
20
30
40
50
0
20
40
80
100
V
CE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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