APTGT50H120T3G [MICROSEMI]
Full - Bridge Fast Trench + Field Stop IGBT Power Module; 全 - 桥快速沟道+场截止IGBT功率模块
| 型号： | APTGT50H120T3G |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge Fast Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT50H120T3G
Full - Bridge
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
13 14
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
CR1
22
CR3
11
10
18
19
Features
Fast Trench + Field Stop IGBT® Technology
7
8
•
-
-
-
-
-
-
-
-
Low voltage drop
23
Low tail current
Q2
29
Q4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
CR4
26
27
4
3
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
30
31
32
•
•
•
•
Kelvin emitter for easy drive
Low stray inductance
15
16
R1
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
Benefits
29
16
•
Outstanding performance at high frequency
operation
30
15
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
•
•
•
Low profile
2
3
4
7
8
10 11
12
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
VCES
Collector - Emitter Breakdown Voltage
1200
TC = 25°C
75
IC
Continuous Collector Current
A
TC = 80°C
TC = 25°C
50
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
100
±20
V
W
TC = 25°C
TJ = 125°C
Maximum Power Dissipation
270
RBSOA Reverse Bias Safe Operating Area
100A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT50H120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
500
2.1
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 1200V
1.4
5.0
1.7
2.0
5.8
VGE =15V
IC = 50A
VGE = VCE , IC = 2mA
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
6.5
400
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Input Capacitance
VGE = 0V,VCE = 25V
3600
pF
f = 1MHz
Crss
Reverse Transfer Capacitance
160
90
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
30
420
70
90
50
520
90
ns
VBus = 600V
IC = 50A
RG = 18Ω
Inductive Switching (125°C)
VGE = ±15V
ns
VBus = 600V
IC = 50A
Tf
Fall Time
RG = 18Ω
VGE = ±15V
Eon
Turn-on Switching Energy
Tj = 125°C
5
VBus = 600V
IC = 50A
mJ
Eoff
Turn-off Switching Energy
Tj = 125°C
5.5
RG = 18Ω
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1200
V
µA
A
Tj = 25°C
VR=1200V
250
500
Tj = 125°C
DC Forward Current
Tc = 70°C
IF = 60A
60
2
2.3
1.8
2.5
IF = 120A
IF = 60A
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
400
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
470
1200
4000
VR = 800V
di/dt =200A/µs
Qrr
nC
IF = 60A
Er
Reverse Recovery Energy
Tj = 125°C
2.2
mJ
VR = 800V
di/dt =1000A/µs
2 - 5
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APTGT50H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.45
RthJC
Junction to Case Thermal Resistance
°C/W
0.9
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 - 5
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APTGT50H120T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
100
80
60
40
20
0
100
80
60
40
20
0
TJ = 125°C
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
TJ=125°C
VGE=9V
0
1
2
CE (V)
3
4
0
0.5
1
1.5
2
2.5
3
3.5
VCE (V)
V
Energy losses vs Collector Current
Transfert Characteristics
100
80
60
40
20
0
12
10
8
VCE = 600V
Eon
TJ=25°C
VGE = 15V
RG = 18Ω
TJ = 125°C
6
TJ=125°C
Eoff
Eon
4
TJ=125°C
2
0
10
30
50
70
90
110
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
120
100
80
60
40
20
0
VCE = 600V
VGE =15V
IC = 50A
11
10
9
Eon
TJ = 125°C
8
7
Eoff
Eoff
VGE=15V
TJ=125°C
RG=18Ω
6
5
4
0
20
40
60
80
0
400
800
VCE (V)
1200
1600
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.4
0.3
0.2
0.1
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT50H120T3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
160
140
120
100
80
80
60
40
20
0
VCE=600V
D=50%
RG=18Ω
TJ=125°C
TC=75°C
ZCS
TJ=125°C
ZVS
60
TJ=25°C
40
hard
switching
20
0
0
0.5
1
1.5
F (V)
2
2.5
3
0
10
20
30
I
40
C (A)
50
60
70
V
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
Diode
0.9
0.7
0.8
0.6
0.4
0.2
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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