ARF467FL [MICROSEMI]
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE; RF功率MOSFET N沟道增强模式
| 型号： | ARF467FL |
| 厂家： | 
Microsemi |
| 描述： | RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ARF467FL
D
S
ARF467FL
G
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
200V 300W 45MHz
TheARF467FLisaruggedhighvoltageRFpowertransistordesignedforscientific,commercial,medicalandindustrial
RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of
operation.
• Low Cost Flangeless RF Package.
• Low Vth thermal coefficient.
• LowThermalResistance.
• Specified150Volt, 40.68MHzCharacteristics:
•
•
•
Output Power = 300 Watts.
Gain = 16dB (Class AB)
Efficiency = 75% (Class C)
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
ARF467FL
1000
1000
12
UNIT
VDSS
VDGO
ID
Drain-Source Voltage
Volts
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Amps
Volts
Watts
°C/W
VGS
PD
Gate-Source Voltage
±30
Total Power Dissipation @ TC = 25°C
425
RθJC
TJ,TSTG
TL
Junction to Case
0.35
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 175
300
°C
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
ohms
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1000
1
Drain-Source On-State Resistance (VGS = 10V, ID = 6.5A)
RDS(ON)
1.0
25
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 6.5A)
IDSS
µA
250
±100
9
IGSS
gfs
nA
mhos
Volts
4
3
6
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
VGS(TH)
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
ARF467FL
MAX UNIT
TestConditions
GS = 0V
MIN
TYP
1900
230
40
Ciss
Input Capacitance
V
Coss
pF
Output Capacitance
VDS = 50V
f = 1 MHz
Crss
td(on)
tr
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
12
VGS = 15V
V
DD = 500 V
ID = 12A @ 25°C
RG = 1.6Ω
8
ns
td(off)
tf
Turn-off Delay Time
Fall Time
41
10
FUNCTIONALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
TestConditions
UNIT
dB
GPS
Common Source Amplifier Power Gain
Drain Efficiency
f = 40.68 MHz
14
70
16
75
VGS = 2.5V
VDD = 150V
η
%
Pout = 300W
ψ
Electrical Ruggedness VSWR 10:1
NoDegradationinOutputPower
1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
4,000
C
C
iss
1,000
500
oss
100
50
C
rss
10
.1
1
10
100 200
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure2,TypicalCapacitancevs.Drain-to-SourceVoltage
35
30
25
20
15
10
48
V
> I (ON) x
DS
R
(ON)MAX.
DS
D
T
= -55°C
OPERATIONHERE
LIMITEDBYR (ON)
DS
J
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10
5
100uS
1mS
1
10mS
.5
T
= +25°C
100mS
J
T
=+25°C
T =+175°C
C
5
0
J
T
= +125°C
4
T = -55°C
J
J
SINGLEPULSE
10
.1
0
2
6
8
10
1
100
1000
VGS,GATE-TO-SOURCEVOLTAGE(VOLTS)
Figure 3, Typical Transfer Characteristics
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 4, Typical Maximum Safe Operating Area
TYPICALPERFORMANCECURVES
ARF467FL
25
20
15
10
5
1.10
1.05
1.00
0.95
0.90
0.85
8V
7V
V
= 9V
GS
6V
5V
0.80
0.75
0
-50 -25
0
25
TC,CASETEMPERATURE(°C)
Figure5,TypicalThresholdVoltagevsTemperature
50
75 100 125 150
0
V
5
10
15
20
25
30
DS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure6,TypicalOutputCharacteristics
0.40
0.35
0.30
0.25
0.20
0.15
0.10
D = 0.9
0.7
0.5
Note:
t
1
0.3
t
2
t
SINGLEPULSE
10-3
1
Duty Factor D =
Peak T = P x Z
/
t
0.05
0
0.1
2
+ T
J
DM θJC
C
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE7a,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
TJ ( C)
TC ( C)
ZEXT are the external thermal
0.126
0.170
0.0535
impedances: Case to sink, sink to
ambient, etc. Set to zero when modeling
only the case to junction.
Dissipated Power
(Watts)
0.00748F
0.0556F
0.657F
Figure7b,TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
ZOL (Ω)
ZIN (Ω)
2.0
13.5
27.1
40.7
65
18 - j 11
1.3 - j 5
.40 - j 2.6
.20 - j 1.6
.11 + j 0.6
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
Z
- Gate shunted with 25Ω
I
= 100mA
in
DQ
ZOL - Conjugate of optimum load for 300 W output at V = 150V
dd
ARF467FL
L4
+
-
R1
150V
+
-
Bias
0-12V
C7
C8
L3
RF
Output
R3
R2
R4
C6
L1
C9
RF
Input
C2
L2
ARF467FL
C5
C4
TL1
R5
C3
C1
40.68 MHz Test Circuit
R1- R3 -- 1kΩ 0.5W
C1 -- 2200pF ATC 700B
C2-C5 -- Arco 465 Mica trimmer
C6-C8 -- .1 µF 500V ceramic chip
L1 -- 3t #22 AWG .25"ID .25 "L ~55nH
L2 -- 5t #16 AWG .312" ID .35"L ~176nH
L3 -- 10t #24 AWG .25"ID ~.5uH
R4- R5 -- 1Ω 1W SMT
TL1 -- 40Ω t-line 0.15 x 2"
C1 is ~1.75" from R4-5.
C9 -- 3x 2200pF 500V chips COG
L4 -- VK200-4B ferrite choke 3uH
T3 Package Outline
.325 +/- .01
.125dia
4 pls
S
D
.125R
4 pls
S
Thermal Considerations and Package Mounting:
The rated power dissipation is only available when the
package mounting surface is at 25 C and the junction tem-
perature is 175 C. The thermal resistance between junc-
tions and case mounting surface is 0.3 C/W. When instal-
led, an additional thermal impedance of 0.17 C/W between
the package base and the mounting surface is typical. In-
sure that the mounting surface is smooth and flat. Thermal
joint compound must be used to reduce the effects of small
surface irregularities. Use the minimum amount necessary
to coat the surface. The heatsink should incorporate a cop-
per heat spreader to obtain best results.
ARF467FL
.320
.570
1.250
G
S
S
1.500
The package design clamps the ceramic base to the
heatsink. A clamped joint maintains the required mounting
pressure while allowing for thermal expansion of both the
base and the heat sink. Four 4-40 (M3) screws provide
the required mounting force. Torque the mounting screws
to 6 in-lb (0.68 N-m).
.330
.210
.210
.300
.005
.200
.040
HAZARDOUS MATERIAL WARNING
The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during
handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.
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