MGF0918A [MITSUBISHI]
L & S BAND GaAs FET [ SMD non - matched ]; L＆ S波段砷化镓场效应管[ SMD非 - 匹配]
| 型号： | MGF0918A |
| 厂家： | 
Mitsubishi Group |
| 描述： | L & S BAND GaAs FET [ SMD non - matched ] |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0918A
Preliminary
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
· High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
· High power gain
Gp=20dB(TYP.) @f=1.9GHz
· High power added efficiency
hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm
· Hermetic Package
APPLICATION
· For UHF Band power amplifiers
Fig.1
QUALITY
· GG
RECOMMENDED BIAS CONDITIONS
· Vds=10V · Ids=150mA · Rg=1kW
Delivery
Tape & Reel
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
Unit
V
Gate to source
breakdown voltage
VGSO
-15
-15
VGDO Gate to drain breakdown voltage
V
ID
Drain current
400
mA
mA
mA
W
IGR
IGF
PT
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-1.2
5.0
3
Tch
Tstg
175
°C
°C
-65 to +175
Electrical characteristics
(Ta=25°C)
Symbol
Parameter
Test conditions
Limits
Typ.
300
-
Unit
Min.
Max.
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
VDS=3V,VGS=0V
-
400
mA
V
IDSS
VDS=3V,ID=1.0mA
-1.0
-5.0
VGS(off)
gm
VDS=3V,ID=150mA
VDS=10V,ID=150mA,f=1.9GHz
Pin=8dBm
-
25
-
130
27
-
-
mS
dBm
%
Po
hadd
GLP
NF
Power added Efficiency
Linear Power Gain
Noise figure
45
-
VDS=10V,ID=150mA,f=1.9GHz
-
20
-
dB
-
1.0
35
-
dB
Rth(ch-c) Thermal Resistance *1
DVf Method
-
50
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
MGF0918A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
35
70
60
50
40
30
20
10
0
Vds=10V
Id(off)=150mA
f=1.9GHz
30
Po
25
20
15
10
5
PAE
Gp
0
-10
-5
0
5
10
15
Pin(dBm)
P i(S C L ) vs.P o(S C L ),IM 3
30
30
V D = 10V
25
20
15
10
5
20
ID = 150m A
f1= 1.90G H z
f2= 1.91G H z
P o
10
0
-10
-20
-30
-40
-50
-60
-70
IM 3
0
-5
-10
-15
-20
-20
-15
-10
-5
0
5
10
15
P in(S C L )(dB m )
Mitsubishi Electric
July 1999
MGF0918A S PARAMETERS (Ta=25°C, VD=10V,ID=150mA, Reference Plane see Fig.1)
freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
6.2
6.4
6.6
6.8
7.0
S11
S21
S12
S22
K
MSG/MAG
(dB)
Mag
0.96
0.95
0.94
0.93
0.93
0.92
0.92
0.92
0.91
0.91
0.91
0.90
0.90
0.90
0.90
0.90
0.90
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.88
0.88
0.88
0.88
0.88
0.88
0.87
0.87
0.87
0.87
Ang(deg)
-29.56
-45.03
-60.22
-72.06
-81.77
-90.08
-97.23
Mag
6.13
5.57
5.01
4.57
4.21
3.91
3.65
3.42
3.22
3.04
2.87
2.72
2.59
2.46
2.35
2.24
2.14
2.05
1.96
1.88
1.80
1.73
1.66
1.59
1.53
1.47
1.41
1.35
1.30
1.25
1.20
1.15
1.10
1.06
Ang(deg)
164.06
147.46
131.01
118.17
107.50
98.41
90.37
83.37
77.02
71.20
65.90
60.94
56.39
52.06
48.04
44.14
40.54
37.05
33.78
30.61
27.54
24.67
21.81
19.05
16.39
13.82
11.37
8.89
Mag
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
Ang(deg)
110.56
94.16
77.91
65.17
54.60
45.71
37.87
30.87
24.52
18.80
13.60
8.74
Mag
0.24
0.31
0.37
0.42
0.46
0.49
0.52
0.55
0.57
0.59
0.61
0.63
0.65
0.66
0.68
0.69
0.70
0.71
0.72
0.73
0.74
0.75
0.76
0.77
0.77
0.78
0.79
0.79
0.80
0.81
0.81
0.82
0.82
0.83
Ang(deg)
-44.00
-56.07
-67.82
-77.03
-84.71
-91.25
-96.98
0.11
0.14
0.19
0.23
0.26
0.28
0.32
0.34
0.37
0.39
0.42
0.43
0.46
0.50
0.50
0.53
0.57
0.60
0.63
0.63
0.66
0.69
0.73
0.75
0.75
0.78
0.81
0.85
0.88
0.91
0.90
0.91
0.91
0.91
24.89
24.29
23.66
23.11
22.60
22.13
21.87
21.45
21.21
20.82
20.60
20.23
20.03
19.83
19.48
19.29
19.10
18.92
18.73
18.41
18.22
18.04
17.86
17.68
17.36
17.18
17.00
16.81
16.63
16.44
16.11
15.78
15.45
15.11
-103.61
-109.26
-114.47
-119.16
-123.61
-127.67
-131.51
-135.04
-138.46
-141.69
-144.72
-147.64
-150.46
-153.19
-155.82
-158.36
-160.81
-163.16
-165.43
-167.70
-169.88
-172.07
-174.18
-176.22
-178.26
179.68
177.61
-102.08
-106.67
-110.93
-114.80
-118.34
-121.78
-124.92
-127.94
-130.76
-133.48
-136.01
-138.52
-140.91
-143.13
-145.33
-147.53
-149.54
-151.54
-153.54
-155.44
-157.26
-159.07
-160.79
-162.58
-164.38
-166.17
-167.97
4.19
-0.04
-4.06
-7.86
-11.46
-14.85
-18.12
-21.29
-24.26
-27.23
-29.99
-32.65
-35.31
-37.88
-40.33
-42.71
-45.07
-47.35
-49.62
-51.90
-54.17
-56.45
6.53
4.25
1.98
-0.30
-2.57
-4.85
2.0
0.8
Gate Mark
Round corner
0.80
Gate Mark
(1)
(1)
Reference Plane
Reference Plane
(3)
(2)
0.6
(2)
0.25
4.00
2.5
BACK SIDE PATTERN
(1) Gate
(2) Drain
(3) Source
(Unit:mm)
Fig.1 OUTLINE DRAW ING
Mitsubishi Electric
July 1999
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