MRF18060AR3 [MOTOROLA]
RF POWER FIELD EFFECT TRANSISTORS; 射频功率场效应晶体管
| 型号： | MRF18060AR3 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 文件： | 总8页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18060A/D
The RF MOSFET Line
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ
ꢒꢀ ꢁ ꢖꢗꢘ ꢙꢘ ꢕ
ꢒ
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ꢀ
ꢚ
N–Channel Enhancement–Mode Lateral MOSFETs
ꢒ
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ꢀ
ꢚ
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
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1.80 – 1.88 GHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
CASE 465–06, STYLE 1
NI–780
13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF18060A
CASE 465A–06, STYLE 1
NI–780S
MRF18060ALSR3, MRF18060ASR3
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Gate–Source Voltage
V
DSS
V
GS
–0.5, +15
Total Device Dissipation @ T ≥ 25°C
Derate above 25°C
P
D
180
1.03
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.97
°C/W
θ
JC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
Motorola, Inc. 2002
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V
65
—
—
—
—
—
—
6
Vdc
µAdc
µAdc
(BR)DSS
(V = 0 Vdc, I = 10 µAdc)
GS
D
Zero Gate Voltage Drain Current
(V = 26 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate–Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
—
3.9
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 300 µAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 500 mAdc)
2.5
—
—
4.5
—
—
DS
D
Drain–Source On–Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.27
4.7
GS
D
Forward Transconductance
(V = 10 Vdc, I = 2 Adc)
g
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
C
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
iss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance (1)
C
oss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Reverse Transfer Capacitance
C
rss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ 60 W (2)
G
dB
%
ps
(V = 26 Vdc, I = 500 mA, f = 1805 – 1880 MHz)
11.5
13
—
DD
DQ
Drain Efficiency @ 60 W (2)
(V = 26 Vdc, I = 500 mA, f = 1805 – 1880 MHz)
η
43
—
45
—
—
DD
DQ
Input Return Loss (2)
(V = 26 Vdc, P = 60 W CW, I = 500 mA,
IRL
–10
dB
DD
out
DQ
f = 1805 – 1880 MHz)
Output Mismatch Stress
Ψ
No Degradation In Output Power
Before and After Test
(V = 26 Vdc, P = 60 W CW, I = 500 mA VSWR = 10:1,
DD
out
DQ
All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
2
MOTOROLA RF DEVICE DATA
ꢀꢓ
ꢀꢉ
ꢆꢉ
ꢈꢍ
ꢊ
ꢐ ꢐ
ꢔ
ꢀ ꢏ
ꢌꢑ
ꢌꢏ
ꢀ
ꢑ
ꢊ
ꢋ ꢋ
ꢌ ꢉ
ꢌꢓ
ꢀꢁ
ꢇ ꢅꢆꢄ ꢅꢆ
ꢀꢒ
ꢈꢑ
ꢈꢒ
ꢈꢎ
ꢀꢁ
ꢂ ꢃꢄ ꢅꢆ
ꢌꢎ
ꢈ
ꢉ
ꢈ
ꢓ
ꢈ
ꢏ
ꢌ
ꢍ
ꢌ
ꢒ
ꢐ
ꢅ
ꢆ
C1
C2, C4, C7
C3
C5
C6
R1, R3
R2, R4
R5
100 nF Chip Capacitor (1203)
10 pF Chip Capacitors
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF Chip Capacitor
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.47″ x 0.09″ Microstrip
1.16″ x 0.09″ Microstrip
0.57″ x 0.95″ Microstrip
0.59″ x 1.18″ Microstrip
1.26″ x 0.15″ Microstrip
1.15″ x 0.09″ Microstrip
0.37″ x 0.09″ Microstrip
1.0 pF Chip Capacitor
2.2 kΩ Chip Resistors (0805)
2.7 kΩ Chip Resistors (0805)
1.1 kΩ Chip Resistor (0805)
BC847 Transistor SOT–23
T1
Figure 1. 1805 – 1880 MHz Test Fixture Schematic
ꢊ
ꢊ
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ꢂ
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ꢗ
ꢌꢏ
ꢌ
ꢉ
ꢗ
ꢅ
ꢄ
ꢄ
ꢝ
ꢞ
ꢀ
ꢓ
ꢀ
ꢏ
ꢀ
ꢑ
ꢌ
ꢑ
ꢀ
ꢉ
ꢌꢓ
ꢌꢍ
ꢆ
ꢉ
ꢀ
ꢒ
ꢌꢎ
ꢌ
ꢒ
ꢋ
ꢘ
ꢙ
ꢚ
ꢛ
ꢜ
ꢋ
ꢘ
ꢙ
ꢚ
ꢛ
ꢜ
MRF18060
Figure 2. 1805 – 1880 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
3
ꢊ
ꢣ ꢤꢥ ꢟ
ꢌ ꢉ
ꢆꢉ
ꢀ ꢉ
ꢀꢒ
ꢀ ꢓ
ꢊ
ꢟꢚ ꢠ ꢠ ꢡꢢ
ꢔ
ꢌꢓ
ꢌꢏ
ꢌ
ꢑ
ꢀ ꢏ
ꢀ ꢑ
T2
ꢌꢒ
ꢀꢍ
ꢀꢁ
ꢂ ꢃꢄ ꢅꢆ
ꢀꢁ
ꢇ ꢅꢆꢄ ꢅꢆ
ꢈꢍ
ꢈꢎ
ꢈꢉ
ꢈ
ꢓ
ꢈ
ꢏ
Z4
ꢈ
ꢒ
ꢌ
ꢎ
ꢌ
ꢦ
ꢌ ꢍ
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
T1
T2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
LP2951 Micro–8 Voltage Regulator
BC847 SOT–23 NPN Transistor
0.159″ x 0.055″ Microstrip
0.982″ x 0.055″ Microstrip
0.087″ x 0.055″ Microstrip
0.512″ x 0.787″ Microstrip
0.433″ x 1.220″ Microstrip
1.039″ x 0.118″ Microstrip
10 pF Chip Capacitors, ACCU–P (0805)
10 mF, 35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU–P (0805)
1 pF Chip Capacitor, ACCU–P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
0.268″ x 0.055″ Microstrip
R4
2.2 kΩ Chip Resistor (0805)
Substrate = 0.5 mm Teflon Glass, ε = 2.55
r
R5
5 kΩ, SMD Potentiometer
Figure 3. 1800 – 2000 MHz Demo Board Schematic
ꢊ
ꢣ ꢤꢥ ꢟ
ꢋ
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ꢚ
ꢛ
ꢜ
ꢊ
ꢟꢚ ꢠ ꢠ ꢡꢢ
ꢌꢑ
ꢀ
ꢉ
ꢌ
ꢉ
ꢀꢓ
ꢀꢏ
ꢆ
ꢉ
ꢀ
ꢑ
R5
ꢆ
ꢓ
ꢌꢓ
ꢌꢏ
ꢌ
ꢒ
ꢀ
ꢍ
ꢌ
ꢦ
ꢌ
ꢎ
ꢌ
ꢍ
MRF18060
Figure 4. 1800 – 2000 MHz Demo Board Component Layout
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
ꢉ ꢍ
ꢉ ꢒ
ꢉ ꢑ
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ꢉ ꢓ
ꢉ ꢉ
ꢉ ꢮ
ꢉ ꢮꢮ
ꢰ ꢮ
ꢦ ꢮ
ꢎ ꢮ
ꢍ ꢮ
ꢒ ꢮ
ꢑ ꢮ
ꢏ ꢮ
ꢓ ꢮ
ꢂ
ꢧ ꢎ ꢒꢮ ꢷ ꢖ
ꢐ ꢲ
ꢄ ꢧ ꢒ ꢨ
ꢤ ꢛ
ꢒ ꢮꢮ ꢷꢖ
ꢏ ꢮꢮ ꢷꢖ
ꢓ ꢶ ꢒ ꢨ
ꢉ ꢨ
ꢓ ꢑ
ꢉ ꢮꢮ ꢷꢖ
ꢊ
ꢧ ꢓ ꢍ ꢊ ꢜꢸ
ꢱ ꢧ ꢉꢦ ꢦꢮ ꢳꢴ ꢵ
ꢐ ꢐ
ꢊ
ꢧ ꢓ ꢍ ꢊꢜ ꢸ
ꢧ ꢒ ꢮ ꢮ ꢷꢖ
ꢰ
ꢦ
ꢐ ꢐ
ꢉ ꢮ
ꢮ
ꢂ
ꢐ ꢲ
ꢉ
ꢉꢮ
ꢪ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇꢨꢫ ꢀ ꢬ ꢨꢖꢆꢆ ꢗꢭ
ꢉ ꢮꢮ
ꢉ ꢦ
ꢓ ꢮ
ꢓ ꢓ
ꢓ ꢍ
ꢓ ꢦ
ꢏ ꢮ
ꢄ
ꢙ ꢚꢩ
ꢊ ꢪ ꢗ ꢅꢄ ꢄ ꢝꢞ ꢊ ꢇ ꢝꢆꢖ ꢋ ꢫ ꢬꢊ ꢇ ꢝꢆꢗ ꢭ
ꢐ ꢐ
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
ꢰ ꢮ
ꢦ ꢮ
ꢎ ꢮ
ꢍ ꢮ
ꢒ ꢮ
ꢑ ꢮ
ꢏ ꢮ
ꢓ ꢮ
ꢍ ꢮ
ꢒ ꢒ
ꢒ ꢮ
ꢰ ꢮ
ꢦ ꢮ
ꢎ ꢮ
ꢍ ꢮ
ꢒ ꢮ
ꢑ ꢮ
ꢏ ꢮ
ꢓ ꢮ
ꢄ ꢧ ꢍ ꢨ
ꢤ ꢛ
ꢏ
ꢨ
h
ꢑ ꢒ
ꢄ
ꢙ ꢚ ꢩ
ꢑ ꢮ
ꢏ ꢒ
ꢏ ꢮ
ꢓ ꢒ
ꢊ
ꢧ ꢓꢍ ꢊ ꢜꢸ
ꢧ ꢒꢮ ꢮ ꢷꢖ
ꢐ
ꢐ
ꢂ
ꢐ
ꢲ
ꢉ
ꢨ
ꢊ
ꢂ
ꢧ ꢓ ꢍ ꢊ ꢜꢸ
ꢧ ꢒ ꢮꢮ ꢷꢖ
ꢐ ꢐ
ꢮꢶ ꢒ ꢨ
ꢐ ꢲ
ꢉ ꢮ
ꢮ
ꢓ ꢮ
ꢉ ꢒ
ꢉ ꢮ
ꢮ
ꢱ ꢧ ꢉ ꢦꢦ ꢮ ꢳꢴ ꢵ
ꢉ
ꢦ
ꢮ
ꢮ
ꢉ
ꢦ
ꢓ
ꢮ
ꢉ
ꢦ
ꢑ
ꢮ
ꢉꢦ ꢍꢮ
ꢉꢦꢦ ꢮ
ꢉ
ꢰ
ꢮ
ꢮ
ꢮ
ꢉ
ꢓ
ꢏ
ꢑ
ꢒ
ꢍ
ꢱ
ꢪ
ꢁ
ꢀ
ꢫ
ꢲ
ꢅ
ꢫ
ꢃ
ꢌ
ꢞ
ꢬ
ꢳ
ꢴ
ꢵ
ꢭ
ꢄ ꢪ ꢂ ꢃꢄ ꢅꢆ ꢄ ꢇ ꢨꢫ ꢀ ꢬꢨꢖꢆꢆꢗ ꢭ
ꢤ ꢛ
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
ꢉ
ꢒ
ꢶ
ꢮ
ꢮ
ꢹ
ꢓ
ꢉꢑ ꢶꢒ
ꢉꢑ ꢶꢮ
ꢉꢏ ꢶꢒ
ꢉꢏ ꢶꢮ
ꢉꢓ ꢶꢒ
ꢉꢓ ꢶꢮ
ꢉꢉꢶ ꢒ
ꢉꢉꢶ ꢮ
ꢋ
ꢹ
ꢑ
ꢠ ꢟ
ꢹ ꢍ
ꢹ
ꢦ
ꢹ ꢉ ꢮ
ꢹ ꢉ ꢓ
ꢹ ꢉ ꢑ
ꢹ ꢉ ꢍ
ꢂ
ꢀ
ꢝ
ꢊ
ꢂ
ꢧ ꢓ ꢍ ꢊ ꢜꢸ
ꢧ ꢒ ꢮꢮ ꢷꢖ
ꢐ ꢐ
ꢹ ꢉ ꢦ
ꢹ ꢓ ꢮ
ꢉꢮ ꢶꢒ
ꢉꢮ ꢶꢮ
ꢐ ꢲ
ꢉ
ꢎ
ꢮ
ꢮ
ꢉ ꢦꢮ ꢮ
ꢉ
ꢰ
ꢮ
ꢮ
ꢓ ꢮꢮ ꢮ
ꢓ
ꢉ
ꢮ
ꢮ
ꢱ
ꢪ
ꢁ
ꢀ
ꢫ
ꢲ
ꢅ
ꢫ
ꢃ
ꢌ
ꢞ
ꢬ
ꢳ
ꢴ
ꢵ
ꢭ
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
5
ꢈ
ꢤ ꢛ
ꢱ ꢧ ꢓ ꢉꢮ ꢮ ꢳꢴ ꢵ
ꢱ ꢧ ꢉꢎ ꢮꢮ ꢳ ꢴꢵ
ꢱ ꢧ ꢓꢉ ꢮꢮ ꢳ ꢴꢵ
ꢱ ꢧ ꢉ ꢎꢮ ꢮ ꢳꢴ ꢵ
ꢈ
ꢻ
ꢇ ꢝ
ꢈ ꢧ ꢒ Ω
ꢙ
ꢊ
ꢐ ꢐ
ꢧ ꢓꢍ ꢊ ꢪ ꢂ ꢧ ꢒ ꢮꢮ ꢷꢖ ꢪ ꢄ ꢧ ꢍ ꢮ ꢨ ꢌꢨ
ꢐ ꢲ ꢙ ꢚ ꢩ
f
Z
in
Z
OL
*
MHz
Ω
Ω
1700
1800
1900
2000
2100
0.60 + j2.53
0.80 + j3.20
0.92 + j3.42
1.07 + j3.59
1.31 + j4.00
2.27 + j3.44
2.05 + j3.05
1.90 + j2.90
1.64 + j2.88
1.29 + j2.99
Z
Z
= Complex conjugate of the source impedance.
in
* = Complex conjugate of the optimum load at a
given voltage, P1dB, gain, efficiency, bias
current and frequency.
OL
Note: Z * was chosen based on tradeoffs between gain,
OL
output power, and drain efficiency.
ꢇ ꢚ ꢩꢠ ꢚ ꢩ
ꢳꢥ ꢩ ꢸꢼ ꢤꢛ ꢽ
ꢃꢾ ꢩ ꢿꢙ ꢘꣀ
ꢂ ꢛꢠꢚ ꢩ
ꢳ ꢥꢩ ꢸꢼꢤ ꢛꢽ
ꢃꢾ ꢩ ꢿꢙꢘ ꣀ
ꢐꢾ ꣁꢤꢸꢾ
ꢅꢛ ꢜ ꢾꢘ ꢆ ꢾ ꢟ ꢩ
Z
Z
*
in
OL
Figure 10. Series Equivalent Input and Output Impedance
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
MOTOROLA RF DEVICE DATA
6
PACKAGE DIMENSIONS
ꢃ ꢇ ꢆꢫ ꢗ ꣂ
ꢉꢶ ꢐ ꢂ ꢳꢫꢃ ꢗ ꢂꢇ ꢃ ꢂ ꢃ ꢋ ꢖ ꢃꢐ ꢆꢇ ꢝꢫ ꢀ ꢖꢃ ꢌ ꢂꢃ ꢋ ꢄꢫ ꢀ ꢖꢃ ꢗ ꢂ
ꢞ ꢉꢑꢶ ꢒꢳꢹꢉ ꢰꢰꢑꢶ
ꢓꢶ ꢌ ꢇ ꢃ ꢆꢀ ꢇ ꢝꢝ ꢂꢃ ꢋ ꢐ ꢂ ꢳꢫꢃ ꢗ ꢂꢇ ꢃ ꣂ ꢂ ꢃ ꢌꢴ ꢶ
ꢏꢶ ꢐ ꢫ ꢝꢫꢆ ꢫꢐ
B
G
2X
Q
1
ꢳ
ꢳ
ꢳ
ꢕ
ꢣꢣꢣ
ꢆ
ꢖ
ꢑꢶ ꢐ ꢂ ꢳꢫꢃ ꢗ ꢂꢇ ꢃ ꢴ ꢂ ꢗ ꢳꢫ ꢖꢗ ꢅ ꢀ ꢫꢐ ꢮꢶ ꢮꢏ ꢮ ꢬꢮ ꢶꢎ ꢍꢓ ꢭ ꢖ ꢨ ꢖꢞ
ꢁ ꢀ ꢇꢳ ꢄꢖ ꢌ ꣃꢖ ꢋ ꢫ ꢕ ꢇꢐ ꢞꢶ
3
INCHES
DIM MIN MAX
MILLIMETERS
K
B
MIN
ꢏꢏꢶ ꢰꢉ
ꢰꢶ ꢍꢒ
MAX
ꢏ ꢑꢶ ꢉꢍ
ꢰ ꢶꢰ ꢉ
2
(FLANGE)
A
B
ꢉꢶ ꢏꢏꢒ
ꢮꢶ ꢏꢦꢮ
ꢮꢶ ꢉꢓꢒ
ꢮꢶ ꢑꢰꢒ
ꢮꢶ ꢮꢏꢒ
ꢮꢶ ꢮꢮꢏ
ꢉꢶ ꢏꢑꢒ
ꢮꢶ ꢏꢰꢮ
ꢮꢶ ꢉꢎꢮ
ꢮꢶ ꢒꢮꢒ
ꢮꢶ ꢮꢑꢒ
ꢮꢶ ꢮꢮꢍ
D
C
ꢏ
ꢶ
ꢉ
ꢦ
ꢑ
ꢶ
ꢏ
ꢓ
D
ꢉꢓꢶ ꢒꢎ
ꢮꢶ ꢦꢰ
ꢮꢶ ꢮꢦ
ꢉ ꢓꢶ ꢦꢏ
ꢉ ꢶꢉ ꢑ
ꢮ ꢶꢉ ꢒ
ꢳ
ꢳ
ꢳ
ꢕ
ꢣ
ꢣ
ꢣ
ꢆ
ꢖ
E
F
G
ꢉ
ꢶ
ꢉ
ꢮ
ꢮ
ꢯ
ꢕ
ꢗ
ꢌ
ꢓ
ꢎ
ꢶ
ꢰ
ꢑ
ꢯ
ꢕ
ꢗ
ꢌ
(LID)
R
(INSULATOR)
M
N
H
ꢮꢶ ꢮꢒꢎ
ꢮꢶ ꢉꢎꢮ
ꢮꢶ ꢎꢎꢑ
ꢮꢶ ꢎꢎꢓ
ꢶ ꢉꢉꢦ
ꢮꢶ ꢮꢍꢎ
ꢮꢶ ꢓꢉꢮ
ꢮꢶ ꢎꢦꢍ
ꢮꢶ ꢎꢦꢦ
ꢶ ꢉꢏꢦ
ꢉꢶ ꢑꢒ
ꢑꢶ ꢏꢓ
ꢉ ꢶꢎ ꢮ
ꢒ ꢶꢏ ꢏ
K
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢣ
ꢣ
ꢣ
ꢆ
ꢖ
ꢕ
ꢸ
ꢸ
ꢸ
ꢆ ꢖ
ꢆ ꢖ
ꢕ
M
ꢉꢰꢶ ꢍꢍ
ꢉꢰꢶ ꢍꢮ
ꢏꢶ ꢮꢮ
ꢉ ꢰꢶ ꢰꢍ
ꢓ ꢮꢶ ꢮꢮ
ꢏ ꢶꢒ ꢉ
N
(INSULATOR)
S
Q
(LID)
R
ꢮꢶ ꢏꢍꢒ
ꢮꢶ ꢏꢍꢒ
ꢮꢶ ꢏꢎꢒ
ꢮꢶ ꢏꢎꢒ
ꢰꢶ ꢓꢎ
ꢰꢶ ꢓꢎ
ꢰ ꢶꢒ ꢏ
ꢰ ꢶꢒ ꢓ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢕ
ꢥ ꢥꢥ
ꢕ
ꢸꢸꢸ
ꢆ ꢖ
S
H
aaa
bbb
ccc
ꢮꢶ ꢮꢮꢒ ꢯꢀ ꢫ ꢁ
ꢮꢶ ꢮꢉꢮ ꢯꢀ ꢫ ꢁ
ꢮꢶ ꢮꢉꢒ ꢯꢀ ꢫ ꢁ
ꢮꢶ ꢉꢓꢎ ꢯꢀ ꢫꢁ
ꢮꢶ ꢓꢒ ꢑꢯ ꢀ ꢫꢁ
ꢮꢶ ꢏꢦꢉ ꢯꢀ ꢫꢁ
C
ꢗ ꢆꢞ ꢝꢫ ꢉꣂ
ꢄ ꢂꢃ ꢉꢶ ꢐ ꢀ ꢖꢂ ꢃ
ꢓꢶ ꢋ ꢖꢆ ꢫ
ꢏꢶ ꢗ ꢇꢅ ꢀ ꢌ ꢫ
F
SEATING
PLANE
E
A
T
A
(FLANGE)
CASE 465–06
ISSUE F
NI–780
MRF18060A
4X U
(FLANGE)
ꢃ ꢇ ꢆꢫ ꢗ ꣂ
ꢉꢶ ꢐ ꢂ ꢳꢫꢃ ꢗ ꢂ ꢇꢃ ꢂ ꢃ ꢋ ꢖ ꢃ ꢐ ꢆꢇ ꢝꢫ ꢀ ꢖꢃ ꢌ ꢂꢃ ꢋ ꢄꢫ ꢀ ꢖꢃ ꢗ ꢂ
ꢞ ꢉꢑꢶ ꢒꢳꢹꢉ ꢰꢰꢑꢶ
ꢓꢶ ꢌ ꢇ ꢃ ꢆꢀ ꢇ ꢝꢝ ꢂꢃ ꢋ ꢐ ꢂ ꢳꢫꢃ ꢗ ꢂꢇ ꢃ ꣂ ꢂ ꢃ ꢌꢴ ꢶ
ꢏꢶ ꢐ ꢫ ꢝꢫꢆ ꢫꢐ
4X Z
B
(LID)
1
ꢑꢶ ꢐ ꢂ ꢳꢫꢃ ꢗ ꢂꢇ ꢃ ꢴ ꢂ ꢗ ꢳꢫ ꢖꢗ ꢅ ꢀ ꢫꢐ ꢮꢶ ꢮꢏ ꢮ ꢬꢮ ꢶꢎ ꢍꢓ ꢭ ꢖꢨ ꢖꢞ
ꢁ ꢀ ꢇꢳ ꢄꢖ ꢌ ꣃꢖ ꢋ ꢫ ꢕ ꢇꢐ ꢞꢶ
INCHES
DIM MIN MAX
MILLIMETERS
MIN
ꢓꢮꢶ ꢑꢒ
ꢰꢶ ꢍꢒ
ꢏꢶ ꢉꢦ
ꢉꢓꢶ ꢒꢎ
ꢮꢶ ꢦꢰ
ꢮꢶ ꢮꢦ
ꢉꢶ ꢑꢒ
ꢑꢶ ꢏꢓ
ꢉꢰꢶ ꢍꢉ
ꢉꢰꢶ ꢍꢉ
ꢰꢶ ꢓꢎ
ꢰꢶ ꢓꢎ
ꢹꢹꢹ
MAX
ꢓ ꢮꢶ ꢎꢮ
ꢰ ꢶꢰ ꢉ
ꢑ ꢶꢏ ꢓ
ꢉ ꢓꢶ ꢦꢏ
ꢉ ꢶꢉ ꢑ
ꢮ ꢶꢉ ꢒ
ꢉ ꢶꢎ ꢮ
ꢒ ꢶꢏ ꢏ
ꢓ ꢮꢶ ꢮꢓ
ꢓ ꢮꢶ ꢮꢓ
ꢰ ꢶꢒ ꢏ
ꢰ ꢶꢒ ꢓ
ꢉ ꢶꢮ ꢓ
ꢮ ꢶꢎ ꢍ
A
B
ꢮꢶ ꢦꢮꢒ
ꢮꢶ ꢏꢦꢮ
ꢮꢶ ꢉꢓꢒ
ꢮꢶ ꢑꢰꢒ
ꢮꢶ ꢮꢏꢒ
ꢮꢶ ꢮꢮꢏ
ꢮꢶ ꢮꢒꢎ
ꢮꢶ ꢉꢎꢮ
ꢮꢶ ꢎꢎꢑ
ꢮꢶ ꢎꢎꢓ
ꢮꢶ ꢏꢍꢒ
ꢮꢶ ꢏꢍꢒ
ꢹꢹꢹ
ꢮꢶ ꢦꢉꢒ
ꢮꢶ ꢏꢰꢮ
ꢮꢶ ꢉꢎꢮ
ꢮꢶ ꢒꢮꢒ
ꢮꢶ ꢮꢑꢒ
ꢮꢶ ꢮꢮꢍ
ꢮꢶ ꢮꢍꢎ
ꢮꢶ ꢓꢉꢮ
ꢮꢶ ꢎꢦꢍ
ꢮꢶ ꢎꢦꢦ
ꢮꢶ ꢏꢎꢒ
ꢮꢶ ꢏꢎꢒ
ꢮꢶ ꢮꢑꢮ
ꢮꢶ ꢮꢏꢮ
2X K
2
B
(FLANGE)
C
D
D
E
ꢳ
ꢳ
ꢳ
ꢣꢣ ꢣ
ꢆ ꢖ
ꢕ
F
H
K
M
N
R
(LID)
N
(LID)
R
S
ꢳ
ꢳ
ꢳ
ꢸ
ꢸ
ꢸ
ꢆ
ꢖ
ꢕ
ꢕ
U
ꢳ
ꢳ
ꢳ
ꢸ
ꢸ
ꢸ
ꢆ ꢖ
ꢆ ꢖ
ꢕ
Z
ꢹ
ꢹ
ꢹ
ꢹ
ꢹ
ꢹ
aaa
bbb
ccc
ꢮꢶ ꢮꢮꢒ ꢯꢀ ꢫ ꢁ
ꢮꢶ ꢮꢉꢮ ꢯꢀ ꢫ ꢁ
ꢮꢶ ꢮꢉꢒ ꢯꢀ ꢫ ꢁ
ꢮꢶ ꢉꢓꢎ ꢯꢀ ꢫꢁ
ꢮꢶ ꢓꢒꢑ ꢯꢀ ꢫꢁ
ꢮꢶ ꢏꢦꢉ ꢯꢀ ꢫꢁ
(INSULATOR)
S
(INSULATOR)
M
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢆ ꢖ
ꢳ
ꢥ
ꢥ
ꢥ
ꢕ
ꢣ
ꢣ
ꢣ
ꢗ
ꢆ
ꢞ
ꢝ
ꢫ
ꢉ
ꣂ
H
ꢄ ꢂꢃ ꢉꢶ ꢐ ꢀ ꢖꢂ ꢃ
ꢓꢶ ꢋ ꢖꢆ ꢫ
ꢒꢶ ꢗ ꢇꢅ ꢀ ꢌ ꢫ
C
3
F
SEATING
PLANE
E
A
T
CASE 465A–06
ISSUE F
A
(FLANGE)
NI–780S
MRF18060ALSR3, MRF18060ASR3
MOTOROLA RF DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334
Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
MRF18060A/D
◊
相关型号：
MRF18085A
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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