MTB3N60E [MOTOROLA]

TMOS POWER FET 3.0 AMPERES 600 VOLTS; TMOS功率场效应晶体管3.0安培600伏


型号：	MTB3N60E
厂家：	MOTOROLA
描述：	TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS功率场效应晶体管3.0安培600伏晶体晶体管功率场效应晶体管开关脉冲
文件：	总4页 (文件大小：78K)
中文：	中文翻译
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by MTB3N60E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

D PAK for Surface Mount

TMOS POWER FET

3.0 AMPERES

600 VOLTS

N–Channel Enhancement–Mode Silicon Gate

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications such as power supplies, PWM motor

controls and other inductive loads, the avalanche energy capability

is specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

= 2.2 OHMS

DS(on)

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Low Stored Gate Charge for Efficient Switching

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the

Avalanche Mode

CASE 418B–03, Style 2

•

Source–to–Drain Diode Recovery Time Comparable to Discrete

Fast Recovery Diode

D PAK

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

DSS

600

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–repetitive

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Pulsed

3.0

2.4

Adc

Total Power Dissipation @ T = 25°C

0.6

2.5

Watts

W/°C

Watts

Derate above 25°C

(1)

Total Power Dissipation @ T = 25°C

Operating and Storage Temperature Range

T , T

–55 to 150

°C

stg

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T < 150°C)

(2)

(3)

Single Pulse Drain–to–Source Avalanche Energy — T = 25°C

290

7.5

DSR

Single Pulse Drain–to–Source Avalanche Energy — T = 100°C

Repetitive Pulse Drain–to–Source Avalanche Energy

DSR

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case°

Thermal Resistance — Junction to Ambient°

Thermal Resistance — Junction to Ambient

1.67

62.5

°C/W

°C

θJC

θJA

(1)

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

(1) When surface mounted to an FR–4 board using the minimum recommended pad size

(2) V

= 50 V, I = 3.0 A

(3) Pulse Width and frequency is limited by T (max) and thermal response

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

600

—

Vdc

(BR)DSS

= 0, I = 250 µAdc)

Zero Gate Voltage Drain Current

µAdc

DSS

= 600 V, V

= 480 V, V

= 0)

—

100

= 0, T = 125°C)

Gate–Body Leakage Current — Forward (V

= 20 Vdc, V

= 0)

—

100

nAdc

GSF

GSR

GSSF

Gate–Body Leakage Current — Reverse (V

= 20 Vdc, V

GSSR

ON CHARACTERISTICS*

Gate Threshold Voltage

Vdc

GS(th)

= V , I = 250 µAdc)

2.0

1.5

—

4.0

3.5

(T = 125°C)

Static Drain–to–Source On–Resistance (V

= 10 Vdc, I = 1.5 A)

—

2.1

2.2

Ohms

Vdc

DS(on)

Drain–to–Source On–Voltage (V

= 10 Vdc)

DS(on)

(I = 3.0 A)

—

9.0

7.5

(I = 1.5 A, T = 100°C)

Forward Transconductance (V

= 15 Vdc, I = 1.5 A)

1.5

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

—

770

105

—

iss

= 25 V, V

f = 1.0 MHz)

= 0,

Output Capacitance

Transfer Capacitance

oss

rss

SWITCHING CHARACTERISTICS*

Turn–On Delay Time

—

5.0

—

d(on)

= 300 V, I ≈ 3.0 A,

Rise Time

= 100 Ω, R = 12 Ω,

Turn–Off Delay Time

Fall Time

d(off)

= 10 V)

GS(on)

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= 420 V, I = 3.0 A,

= 10 V)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

—

1.4

—

Vdc

Forward Turn–On Time

Reverse Recovery Time

(I = 3.0 A, di/dt = 100 A/µs)

400

—

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

—

3.5

4.5

—

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

*Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.

**Limited by circuit inductance.

Motorola TMOS Power MOSFET Transistor Device Data

PACKAGE DIMENSIONS

–B–

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

DIM

MIN

MAX

0.380

0.405

0.190

0.035

0.055

MIN

8.64

9.65

4.06

0.51

1.14

MAX

9.65

10.29

4.83

0.89

1.40

0.340

0.380

0.160

0.020

0.045

–T–

SEATING

PLANE

0.100 BSC

2.54 BSC

0.080

0.018

0.090

0.575

0.045

0.110

0.025

0.110

0.625

0.055

2.03

0.46

2.79

0.64

2.29

2.79

14.60

1.14

15.88

1.40

D 3 PL

0.13 (0.005)

T B

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

CASE 418B–03

ISSUE C

Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

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MTB3N60E/D

◊

Motorola TMOS Power MOSFET Transistor Device Data

MTB3N60E [MOTOROLA]

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