N-HFA15PB120 [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 15 A; FRED超快软恢复二极管， 15 A
| 型号： | N-HFA15PB120 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 15 A |
| 文件： | 总5页 (文件大小：852K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-HFA15PB120
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 15 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I and Q
RRM
rr
Compliant to RoHS
Designed and qualified for industrial level
BENEFITS
TO-247AC modified
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
common
cathode
Reduced parts count
2
DESCRIPTION
HFA15PB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a
superb combination of characteristics which result in
performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V and
15 A continuous current,the HFA15PB120 is especially
well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultrafast recovery time,
the FRED product line features extremely low values
of peak recovery current (IRRM) and does not exhibit
any tendency to “snap-off” during the tb portion of
recovery. The FRED features combine to offer
designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the
switching transistor. These FRED advantages can
help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15PB120 is
ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
1
3
Cathode
Anode
PRODUCT SUMMARY
Package
lF(AV)
TO-247AC modified (2 pins)
15A
VR
VF at lF, at 25°C
trr (typ.)
1200 V
3.0 V
30 ns
TJ max.
150ºC
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
VR
IF
600
15
V
T
= 120 ºC
c
lFSM
lFRM
140
60
A
T
T
= 25 ºC
75
c
c
Maximum power dissipation
PD
W
= 100 ºC
30
TJ, TStg
Operating junction and storage temperature range
- 55 to + 150
ºC
Page 1 of 5
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RoHS
RoHS
N-HFA15PB120
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
TYP.
UNITS
MIN.
Cathode to anode
breakdown voltage
-
-
VBR
IR = 100 µA
1200
IF = 15 A
IF = 30 A
-
-
2.5
3.0
2.3
3.0
-
V
VFM
Maximum forward voltage
IF = 15 A, TJ = 125 ºC
-
-
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
-
-
1
-
20
500
-
Maximum reverse
leakage current
IRM
µA
Junction capacitance
Series inductance
-
-
pF
nH
CT
LS
17
12
-
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNITS
TYP.
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
-
33
28
trr
-
30
ns
Reverse recovery time
trr1
trr2
-
-
TJ = 25 ºC
240
290
3
60
TJ = 125 ºC
120
IF= 15A
dIF/dt = -200 A/µs
VR = 800 V
IRRM1
TJ = 25 ºC
-
-
6.0
Peak recovery current
A
IRRM2
Qrr1
TJ = 125 ºC
10
6
-
-
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
260
960
120
76
180
Reverse recovery charge
nC
Qrr2
600
-
dl(rec)M/dt1
dl(rec)M/dt2
-
Peak rate of fall of recovery
current during tb
A/µs
-
-
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
-
-
Lead temperature
Tlead
0.063'' from case (1.6 mm) for 10 s
300
°C
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
1.20
-
-
RthJC
-
-
-
-
41
K/W
-
RthJA
RthCS
Typical socket mount
41
-
Mounting surface, flat, smooth and greased
0.26
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf . cm
(lbf . in)
Mounting torque
Marking device
-
Case style TO-247AC (JEDEC)
HFA15PA120
Page 2 of 5
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RoHS
RoHS
N-HFA15PB120
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
1.20
1.00
0.80
0.60
0.40
0.20
D = 0.9
0.7
0.5
Note:
t1
0.3
0.1
t2
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
10-4
10-3
10-2
10-1
1
Rectangular pulse duration (seconds)
Fig3. Reverse recovery time vs. current rate
of change
Fig.2 Forward current vs. forward voltage
60
400
T
V
= 125°C
= 800V
J
R
T
= 175°C
= 125°C
J
350
300
250
200
150
100
50
40
30
20
10
0
30A
T
J
15A
T
= 25°C
J
7.5A
T
= -55°C
J
50
0
0
1
2
3
4
5
0
200
400
600
800 1000 1200
Anode-to-cathode voltage-VF (V)
Current rate of change-diF/dt(A/µs)
Fig.4 Reverse recovery charge vs. current
rate of change
Fig.5 Reverse recovery current vs. current
rate of change
2500
25
T
V
= 125°C
T
V
= 125°C
J
J
30A
= 800V
= 800V
R
R
30A
2000
1500
1000
20
15
10
5
15A
15A
7.5A
7.5A
500
0
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
Current rate of change-diF/dt(A/µs)
Current rate of change-diF/dt(A/µs)
Page 3 of 5
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RoHS
RoHS
N-HFA15PB120
SEMICONDUCTOR
Nell High Power Products
Fig.7 Maximum average forward current vs. case temperature
Fig6. Dynamic parameters vs. junction temperature
35
1.2
Q
rr
Duty cycle = 0.5
T
=175°C
J
t
rr
30
25
20
15
10
1.0
0.8
0.6
0.4
0.2
0.0
I
RRM
t
rr
Q
rr
5
0
0
25
50
75
100
125
150
25
50
75
100
125
150
175
Junction temperature (°C),T
Case temperature (°C)
J
Fig.8 Junction capacitance vs. reverse voltage
Fig.9 Reverse recovery parameter test circuit
80
70
60
50
40
30
20
VR = 200 V
Ω
0.01
L = 70 µH
D.U.T.
D
dI /dt
F
adjust
IRFP250
G
S
10
0
10
1
100 200
reverse voltage (V), V
R
Fig.10 Reverse recovery waveform and definitions
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 I
RRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
x l
2
trr
RRM
(2) IRRM - peak reverse recovery current
Q
rr
=
(3) trr - reverse recovery time measured
/dt - peak rate of change of
(5) dI(rec)M
current during tb portion of trr
from zero crossing point of negative
going I to point where a line passing
F
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Page 4 of 5
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RoHS
RoHS
N-HFA15PB120
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
HFA 15 PB
N
120
1
2
3
4
5
-
-
-
-
-
Nell Semiconductors product
FRED family
1
2
3
4
Current rating (15 =15A)
PB = TO-247AC modified
Voltage rating: (120 = 1200 V)
5
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