MJD148 [NEXPERIA]

45 V, 4 A NPN high power bipolar transistorProduction;


型号：	MJD148
厂家：	Nexperia
描述：	45 V, 4 A NPN high power bipolar transistorProduction 开关晶体管
文件：	总10页 (文件大小：215K)
中文：	中文翻译
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MJD148

45 V, 4 A NPN high power bipolar transistor

26 April 2021

Product data sheet

1. General description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

•

High thermal power dissipation capability

•

High energy efficiency due to less heat generation

Electrically similar to popular MJD148 series

Low collector emitter saturation voltage

Fast switching speeds

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Constant current drive backlighting application

Motor drive

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= 1 V; I_C= 0.5 A; pulsed; t_p≤

375

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= 1 V; I_C= 3 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

Nexperia

MJD148

45 V, 4 A NPN high power bipolar transistor

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

collector

emitter

C; mb

mounting base; connected

to collector

aaa-029889

DPAK (SOT428C)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

MJD148

DPAK

Plastic single-ended surface-mounted package (DPAK); 3 SOT428C

leads (one lead cropped)

7. Marking

Table 4. Marking codes

Type number

Marking code

MJD148

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC601134).

Symbol

V_CEO

V_EBO

I_C

Parameter

Conditions

Min

Max

Unit

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

I_CM

peak collector current

total power dissipation

single pulse; t_p≤ 1 ms

T_mb≤ 25 °C

P_tot

[1]

[2]

1.6

150

°C

T_amb≤ 25 °C

T_j

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

-55

-65

[1] Total power dissipation junction to mounting base.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm².

MJD148

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Product data sheet

26 April 2021

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Nexperia

MJD148

45 V, 4 A NPN high power bipolar transistor

aaa-029909

2.0

tot

(W)

1.5

1.0

0.5

-50

100

150

200

(°C)

amb

FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm².

Fig. 1. Power derating curves SOT428C

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

K/W

R_th(j-mb)

thermal resistance from

junction to mounting

base

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm².

aaa-029910

duty cycle = 1

0.75

th(j-a)

(K/W)

0.50

0.33

0.20

0.10

0.02

0.05

0.01

-1

-5

-4

-3

-2

-1

(s)

FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm².

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

MJD148

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Product data sheet

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Nexperia

MJD148

45 V, 4 A NPN high power bipolar transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_CES

collector-emitter cut-off V_CE= 45 V; V_BE= 0 V; T_amb= 25 °C

current

µA

I_EBO

h_FE

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

µA

DC current gain

V_CE= 5 V; I_C= 10 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= 1 V; I_C= 0.5 A; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

375

V_CE= 1 V; I_C= 2 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

V_CE= 1 V; I_C= 3 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

V_CEsat

V_BE

f_T

collector-emitter

saturation voltage

I_C= 2 A; I_B= 0.2 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

0.5

1.1

base-emitter voltage

V_CE= 1 V; I_C= 2 A; pulsed; t_p≤ 300 µs;

T_amb= 25 °C

transition frequency

V_CE= 1 V; I_C= 250 mA; f = 100 MHz;

T_amb= 25 °C

MHz

aaa-033318

aaa-033319

500

(1)

400

(1)

(2)

(3)

300

200

100

300

200

100

(2)

(3)

(mA)

I (mA)

V_CE= 1 V

V_CE= 10 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 3. DC current gain as a function of collector

current; typical values

Fig. 4. DC current gain as a function of collector

current; typical values

MJD148

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Product data sheet

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MJD148

45 V, 4 A NPN high power bipolar transistor

aaa-033320

aaa-033321

1.2

(mA) = 35

(V)

(A)

0.8

(1)

(2)

0.4

(3)

(V)

I (mA)

T_amb= 25 °C

V_CE= 2 V

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

Fig. 6. Base-emitter voltage as a function of collector

current; typical values

aaa-033322

aaa-033323

1.6

BEsat

(V)

CEsat

(V)

1.2

0.8

0.4

(1)

-1

(2)

(3)

(1)

(2)

(3)

-2

-3

(mA)

I (mA)

I_C/I_B= 10

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 7. Base-emitter saturation voltage as a function of Fig. 8. Collector-emitter saturation voltage as a

collector current; typical values

function of collector current; typical values

MJD148

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Product data sheet

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Nexperia

MJD148

45 V, 4 A NPN high power bipolar transistor

aaa-033324

2.0

CEsat

(V)

1.6

1.2

0.8

0.4

(1)

(2)

(3)

(4) (5)

-4

-3

-2

-1

(A)

(1) I_C= 0.01 A

(2) I_C= 0.10 A

(3) I_C= 1 A

(4) I_C= 3 A

(5) I_C= 4 A

Fig. 9. Collector-emitter saturation region as a function of base current; typical values

11. Package outline

6.73

6.47

2.38

2.22

10.40

9.60

Dimensions in mm

19-08-28

Fig. 10. Package outline DPAK (SOT428C)

MJD148

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Product data sheet

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MJD148

45 V, 4 A NPN high power bipolar transistor

12. Soldering

Footprint information for reflow soldering of DPAK (SOT428C) package

SOT428C

6.15

5.9

5.8

1.8

4.725

4.6

5.75 5.65

6.5

0.3

1.15

3.6

2.45

6.125

2.4 2.3

1.3

1.4

1.5

1.65

4.57

occupied area

solder resist

solder paste

solder lands

Dimensions in mm

19-09-06

Issue date

sot428c_fr

Fig. 11. Reflow soldering footprint for DPAK (SOT428C)

MJD148

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Product data sheet

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MJD148

45 V, 4 A NPN high power bipolar transistor

13. Revision history

Table 8. Revision history

Data sheet ID

Release date

20210426

Data sheet status

Change notice

Supersedes

MJD148 v.1

Product data sheet

MJD148

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Product data sheet

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Nexperia

MJD148

45 V, 4 A NPN high power bipolar transistor

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

14. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

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Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

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MJD148

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MJD148

45 V, 4 A NPN high power bipolar transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 3

10. Characteristics............................................................4

11. Package outline.......................................................... 6

12. Soldering..................................................................... 7

13. Revision history..........................................................8

14. Legal information........................................................9

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 26 April 2021

MJD148

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Product data sheet

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MJD148 [NEXPERIA]

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