PSMN0R9-25YLD [NEXPERIA]
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 TechnologyProduction;型号: | PSMN0R9-25YLD |
厂家: | Nexperia |
描述: | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 TechnologyProduction 开关 脉冲 晶体管 |
文件: | 总13页 (文件大小:726K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
27 April 2016
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETS with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
100% Avalanche tested at I(AS) = 190 A
•
•
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery
•
•
•
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
•
•
•
Wave solderable; exposed leads for optimal visual solder inspection
•
3. Applications
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
•
•
•
•
•
•
•
Power OR-ing
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
25
Unit
V
VDS
ID
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
[1]
300
A
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Ptot
Parameter
Conditions
Min
-
Typ
Max
238
175
Unit
W
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
-
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
-
0.96
0.72
1.2
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
0.85
Dynamic characteristics
QG(tot) total gate charge
ID = 25 A; VDS = 12 V; VGS = 10 V;
Fig. 12; Fig. 13
-
-
89.8
41.5
-
-
nC
nC
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 0 V
-
-
47.2
9.9
-
-
nC
nC
QGD
gate-drain charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
Source-drain diode
softness factor
S
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Fig. 16
-
0.8
-
[1] 300A continuous current has been successfully demonstrated during application tests. Practically the
current will be limited by PCB thermal design and operating temperature.
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
S
S
S
G
D
source
source
source
gate
2
G
3
mbb076
4
1
2 3 4
mb
mounting base; connected to
drain
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN0R9-25YLD
LFPAK56;
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
SOT669
Power-SO8
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
2 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN0R9-25YLD
0D925L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
25
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
-
VDGR
VGS
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
25
V
-20
20
V
Ptot
Tmb = 25 °C; Fig. 1
-
238
300
285
1614
175
175
260
-
W
A
ID
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
-
-
A
IDM
peak drain current
-
A
Tstg
Tj
storage temperature
junction temperature
peak soldering temperature
-55
-55
-
°C
°C
°C
V
Tsld(M)
VESD
Source-drain diode
electrostatic discharge voltage HBM
2000
IS
source current
peak source current
Tmb = 25 °C
-
-
198
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1614
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
ID = 25 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 8.2 ms
[2]
-
-
3343 mJ
avalanche energy
IAS
non-repetitive avalanche
current
Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C; [2]
RGS = 50 Ω
190
A
[1] 300A continuous current has been successfully demonstrated during application tests. Practically the
current will be limited by PCB thermal design and operating temperature.
[2] Protected by 100% test
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
3 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
03aa16
aaa-022466
120
500
400
300
200
100
0
I
D
(A)
P
der
(%)
80
(1)
40
0
0
25
50
75 100 125 150 175 200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
VGS ≥ 10 V
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
(1) 300A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB thermal design
and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
aaa-022467
4
10
I
D
(A)
Limit R
= V / I
DS D
DSon
3
2
10
t
= 10 us
p
100 us
10
1 ms
10
DC
10 ms
100 ms
1
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
0.63
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.56
K/W
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
4 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Fig. 5
Min
Typ
50
Max
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
-
-
-
-
Fig. 6
125
aaa-020587
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
-1
10
0.1
0.05
0.02
single shot
t
p
-2
P
10
10
δ =
T
t
t
p
T
-3
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-005750
aaa-005751
Fig. 5. PCB layout for thermal resistance junction to
ambient 1” square pad; FR4 Board; 2oz copper
Fig. 6. PCB layout for thermal resistance junction to
ambient minimum footprint; FR4 Board; 2oz
copper
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
25
-
-
V
V
V
22.5
1.2
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C
voltage
1.73
2.2
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
5 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ΔVGS(th)/ΔT
gate-source threshold 25 °C ≤ Tj ≤ 175 °C
voltage variation with
-
-5.1
-
mV/K
temperature
IDSS
drain leakage current
gate leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
-
-
-
-
1
µA
µA
nA
nA
mΩ
VDS = 20 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
30
-
IGSS
-
100
100
1.2
-
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
0.96
VGS = 4.5 V; ID = 25 A; Tj = 175 °C;
Fig. 10; Fig. 11
-
-
-
-
-
2.04
0.85
1.45
-
mΩ
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
0.72
-
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 10; Fig. 11
RG
gate resistance
f = 1 MHz
1.16
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 12 V; VGS = 10 V;
Fig. 12; Fig. 13
-
-
89.8
41.5
-
-
nC
nC
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 0 V
-
-
-
47.2
15.8
9.7
-
-
-
nC
nC
nC
QGS
gate-source charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
6.1
-
nC
QGD
gate-drain charge
-
-
9.9
2.7
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 12 V; Fig. 12; Fig. 13
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
-
-
-
6721
2390
418
-
-
-
pF
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 12 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω
-
-
-
-
-
37.9
42
-
-
-
-
-
ns
ns
ns
ns
nC
turn-off delay time
fall time
39.2
27.9
Qoss
output charge
VGS = 0 V; VDS = 12 V; f = 1 MHz
All information provided in this document is subject to legal disclaimers.
27 April 2016
44
©
PSMN0R9-25YLD
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
-
-
-
0.78
44
1.2
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
-
ns
nC
ns
VDS = 12 V; Fig. 16
recovered charge
Qr
ta
[1]
54.4
24.2
reverse recovery rise
time
tb
S
reverse recovery fall
time
-
-
19.8
0.8
-
-
ns
softness factor
[1] includes capacitive recovery
aaa-022468
aaa-022469
200
150
100
50
20
R
DSon
I
D
3.5 V
4.5 V
(A)
(mΩ)
V
GS
= 3 V
10 V
15
10
5
2.8 V
2.6 V
0
0
0
1
2
3
DS
4
0
2
4
6
8
10
12
V
GS
14
(V)
16
V
(V)
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
7 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
aaa-022470
aaa-022471
200
10
I
R
DSon
(mΩ)
D
2.8 V
(A)
8
6
4
2
0
150
100
50
3 V
3.5 V
175°C
T = 25°C
j
V
GS
= 10 V 4.5 V
0
0
0.5
1
1.5
2
2.5
3
3.5
(V)
4
0
20
40
60
I (A)
D
80
V
GS
VDS = 12 V
Tj = 25 °C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-021697
aaa-022473
2
10
a
V
GS
(V)
10 V
1.6
8
6
4
2
0
1.2
0.8
0.4
0
V
GS
= 4.5 V
20 V
12 V
V
= 5 V
DS
-60 -30
0
30
60
90 120 150 180
T (°C)
0
20
40
60
80
(nC)
G
100
Q
j
Tj = 25 °C; ID = 25 A
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
8 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
aaa-022474
4
10
V
C
(pF)
DS
C
C
iss
I
D
oss
3
2
10
V
V
GS(pl)
C
rss
GS(th)
V
GS
Q
GS2
10
Q
GS1
Q
GS
Q
GD
Q
G(tot)
003aaa508
10
10
Fig. 13. Gate charge waveform definitions
-1
2
1
10
10
V
DS
(V)
VGS = 0 V; f = 1 MHz
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aal160
aaa-022475
3
2
10
I
S
I
D
(A)
(A)
10
t
rr
t
t
b
a
0
10
0.25 I
RM
1
175°C
0.2
T = 25°C
j
I
RM
-1
10
t (s)
0
0.4
0.6
0.8
1
(V)
1.2
V
SD
Fig. 16. Reverse recovery timing definition
VGS = 0 V
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
9 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
References
Outline
version
European
projection
Issue date
11-03-25
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
10 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
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inclusion and/or use of Nexperia products in such equipment or
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
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Draft — The document is a draft version only. The content is still under
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information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
12.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
11 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
12 / 13
Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
13. Contents
1
General description ............................................... 1
Features and benefits ............................................1
2
3
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................3
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 27 April 2016
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
13 / 13
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