NTE23 [NTE]

Silicon NPN Transistor Ultra High Frequency Amp; 硅NPN晶体管超高频放大器
NTE23
型号: NTE23
厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述:

Silicon NPN Transistor Ultra High Frequency Amp
硅NPN晶体管超高频放大器

晶体 放大器 晶体管
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NTE23  
Silicon NPN Transistor  
Ultra High Frequency Amp  
Description:  
The NTE23 is suitable for a low noise amplifier in the VHF to UHF band.  
Features:  
D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz  
D High Power Gain: Gpe 15dB Typ. @ f = 500MHz  
D
High Cutoff Frequency: fT = 2.0GHz Typ  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V  
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW  
Junction Temperatur, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics:  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
IEBO  
hFE  
Test Conditions  
VCB = 15V, IE = 0  
Min Typ Max Unit  
0.1  
0.1  
200  
µA  
µA  
VEB = 2V, IC = 0  
VCE = 10V, IC = 10mA  
25  
1.5  
80  
2.0  
Gain–Bandwidth Product  
Output Capacitance  
Maximum Available Power Gain  
Noise Figure  
fT  
VCE = 10V, IC = 10mA  
GHz  
pF  
Cob  
VCB = 10V, IE = 0, f = 1MHz  
VCE = 10V, IC = 10mA, f = 500MHz  
VCE = 10V, IC = 3mA, f = 500MHz  
0.75 1.1  
Gpe  
NF  
13  
15  
dB  
dB  
3.0  
4.0  
.135 (3.45) Min  
.210  
(5.33)  
Max  
Seating Plane  
.021 (.445) Dia Max  
.500  
(12.7)  
Min  
B E C  
.100 (2.54)  
.050 (1.27)  
.165  
(4.2)  
Max  
.105 (2.67) Max  
.205 (5.2) Max  
.105 (2.67) Max  

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