BCP68T/R [NXP]
TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General Purpose Power;
| 型号： | BCP68T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General Purpose Power 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
BCP68
NPN medium power transistor;
20 V, 1 A
Product data sheet
2003 Nov 25
Supersedes data of 1999 Apr 08
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
FEATURES
QUICK REFERENCE DATA
• High current
SYMBOL
PARAMETER
MIN. MAX. UNIT
• Two current gain selections
• 1.4 W total power dissipation.
VCEO
collector-emitter
voltage
−
20
V
IC
collector current (DC)
peak collector current
DC current gain
BCP68
−
−
1
2
A
A
ICM
hFE
APPLICATIONS
• Linear voltage regulators
• Low side switches
85
375
BCP68-25
160 375
• Supply line switch for negative voltages
• MOSFET drivers
• Audio pre-amplifiers.
DESCRIPTION
NPN medium power transistor (see “Simplified outline,
symbol and pinning”) for package details.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
MARKING CODE
EIAJ
BCP68
SOT223
SOT223
SC-73
SC-73
BCP68
BCP68-25
BCP68/25
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
DESCRIPTION
base
BCP68
4
handbook, halfpage
2
collector
emitter
2, 4
3
1
4
collector
3
1
2
3
Top view
MAM287
RELATED PRODUCTS
TYPE NUMBER
BCP69
DESCRIPTION
FEATURE
PNP medium power transistor
NPN medium power transistor
NPN medium power transistor
PNP complement
SOT89, 20 V
BC868
BC368
SOT54, 20 V
2003 Nov 25
2
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
BCP68
−
plastic surface mounted package; collector pad for good heat
transfer; 4 leads
SOT223
BCP68-25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
32
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
−
−
−
−
−
−
−
−
−
V
V
V
A
A
open base
20
open collector
5
1
ICM
2
IBM
200
0.625
1
mA
W
Ptot
total power dissipation
Tamb ≤ 25 °C; notes 1 and 2
Tamb ≤ 25 °C; notes 1 and 3
Tamb ≤ 25 °C; notes 1 and 4
W
1.4
+150
150
+150
W
Tstg
Tj
storage temperature
−65
−
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
Notes
1. See SOT223 (SC-73) standard mounting conditions.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad.
4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad.
2003 Nov 25
3
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
MDB846
1.6
handbook, halfpage
(1)
P
tot
(W)
1.2
(2)
0.8
(3)
0.4
0
−60
0
60
120
T
180
(°C)
amb
(1) 6 cm2 collector mounting pad.
(2) 1 cm2 collector mounting pad.
(3) Standard PCB footprint.
Fig.1 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Tamb ≤ 25 °C; notes 1 and 3
Tamb ≤ 25 °C; notes 1 and 4
Tamb ≤ 25 °C; notes 1 and 4
Tamb ≤ 25 °C
VALUE
200
UNIT
K/W
Rth(j-a)
thermal resistance from junction to ambient
125
89
K/W
K/W
K/W
Rth(j-s)
thermal resistance from junction to solder point
15
Notes
1. See SOT223 (SC-73) standard mounting conditions.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad.
4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad.
2003 Nov 25
4
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
7.00
3.85
3.60
3.50
0.30
solder lands
1.20
(4x)
solder resist
occupied area
solder paste
4
7.40
4.80
3.90
7.65
1
2
3
MSA443
1.20 (3x)
1.30 (3x)
5.90
6.15
Dimensions in mm.
Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering).
2003 Nov 25
5
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
handbook, halfpage
32 mm
30 mm
20 mm
40 mm
1.3 mm
2.6 mm
0.5 mm
5 mm
3.96 mm
1.6 mm
MDB845
Dimensions in mm.
Fig.3 6 cm2 collector mounting pad.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 25 V; IE = 0
MIN. TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
−
−
−
−
100
10
nA
μA
nA
VCB = 25 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
IEBO
hFE
emitter-base cut-off current
DC current gain
100
BCP68
VCE = 10 V; IC = 5 mA
VCE = 1 V; IC = 500 mA
VCE = 1 V; IC = 1 A
BCP68-25
50
85
60
−
−
−
−
375
−
VCE = 1 V; IC = 500 mA
160
−
−
375
500
700
1
VCEsat
VBE
collector-emitter saturation voltage IC = 1 A; IB = 100 mA
−
mV
mV
V
base-emitter voltage
VCE = 10 V; IC = 5 mA
−
−
VCE = 1 V; IC = 1 A
−
−
Cc
fT
collector capacitance
transition frequency
VCB = 10 V; IE = ie = 0; f = 1 MHz
VCE = 5 V; IC = 50 mA; f = 100 MHz
−
22
170
−
pF
40
−
MHz
2003 Nov 25
6
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
MDB848
MDB849
2.4
C
1000
handbook, halfpage
handbook, halfpage
I
V
BE
(A)
2.0
(1)
(2)
(mV)
800
(3)
1.6
1.2
(4)
(5)
600
400
200
0
(6)
(7)
(8)
0.8
0.4
0
(9)
(10)
−1
2
3
I
4
0
1
2
3
4
5
(V)
10
1
10
10
10
10
(mA)
V
CE
C
Tamb = 25 °C.
(1) IB = 10 mA.
(2) IB = 9 mA.
(6) IB = 5 mA.
(7) IB = 4 mA.
(3)
I
B = 8 mA.
(8) IB = 3 mA.
(4) IB = 7 mA.
(5) IB = 6 mA.
(9) IB = 2 mA.
(10) IB = 1 mA.
VBE/VCE = 1 V.
Fig.4 Collector current as a function of
collector-emitter voltage; typical values.
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
2003 Nov 25
7
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
MDB850
MDB851
3
3
10
10
handbook, halfpage
handbook, halfpage
h
FE
V
CEsat
(mV)
2
10
10
2
10
1
10
−1
2
3
I
4
−1
2
3
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
I
C
C
IC/IB = 10.
hFE/VCE = 1 V.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.6 DC current gain as a function of collector
current; typical values.
2003 Nov 25
8
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
mdb847
2
10
(1)
(2)
(3)
R
th(j-a)
(4)
(5)
(K/W)
10
(6)
(7)
(8)
(9)
t
p
P
δ
=
T
1
(10)
t
t
p
T
2
−1
10
10
−5
−4
−3
−2
−1
3
10
10
10
10
1
10
10
10
t
(s)
p
(1) δ = 1.0.
(2) δ = 0.75.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.0.
(4) δ = 0.33.
Fig.8 Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm2 collector
mounting pad.
2003 Nov 25
9
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
99-09-13
SOT223
SC-73
2003 Nov 25
10
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Nov 25
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp12
Date of release: 2003 Nov 25
Document order number: 9397 750 12041
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