BLF4G10LS-160 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF4G10LS-160 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总15页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF4G10LS-160
UHF power LDMOS transistor
Rev. 01 — 19 June 2007
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB test circuit.
Mode of operation f VDS PL PL(AV) Gp ηD ACPR400 ACPR600 EVMrms IMD3
(MHz) (V) (W) (W) (dB) (%) (dBc)
894 28 200 - 19.0 59
(dBc)
(%)
-
(dBc)
CW
-
-
-
2-tone
894
894
28
28
-
-
80
80
19.7 42.5 -
19.7 41.5 −61[1]
-
-
−30
GSM EDGE
−72[1]
2.6
-
[1] ACPR400 and ACPR600 at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical GSM EDGE performance at f = 894 MHz, VDS = 28 V and IDq = 900 mA:
N Average output power = 80 W
N Gain = 19.7 dB
N Efficiency = 41.5 %
N ACPR400 = −61 dBc
N ACPR600 = −72 dBc
N EVMrms = 2.6 %
I Easy power control
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier
applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
2
1
3
2
gate
[1]
3
source
2
sym112
[1] Connected to flange
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF4G10LS-160 -
flanged LDMOST ceramic package; 2 mounting holes; 2 SOT502A
leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
drain current
-
65
−0.5 +15
V
-
15
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
-
200
°C
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
Tcase = 80 °C
PL = 50 W
Typ
Max
Unit
thermal resistance from junction
to case
0.49
0.38
0.58
0.47
K/W
K/W
PL = 130 W
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
2 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
65
Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.1 mA
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 230 mA
gate-source quiescent voltage VDS = 28 V; ID = 900 mA
2.5 2.9
3.5
V
2.65 3.15 3.65 V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
5
-
µA
IDSX
VGS = VGS(th) + 6 V;
35
42
A
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 15 V; VDS = 0 V
VDS = 10 V; ID = 7.5 A
-
-
-
-
420 nA
forward transconductance
11
-
S
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 6 V;
ID = 7.5 A
0.065 -
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3.0
-
pF
7. Application information
Table 7.
Mode of operation: 2-tone; f1 = 894 MHz; f2 = 894.2 MHz; RF performance at VDS = 28 V;
Dq = 900 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB test circuit.
Application information
I
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
power gain
PL(PEP) = 160 W
PL(PEP) = 160 W
PL(PEP) = 160 W
PL(PEP) = 160 W
PL(PEP) = 160 W
PL(PEP) = 160 W
18.5 19.7 21
dB
dB
%
RLin
ηD
input return loss
-
−10 −6
drain efficiency
40
-
42.5 -
IMD3
IMD5
IMD7
third order intermodulation distortion
fifth order intermodulation distortion
seventh order intermodulation distortion
−30 −27 dBc
−39 −36 dBc
−59 −55 dBc
-
-
7.1 Ruggedness in class-AB operation
The BLF4G10LS-160 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 900 mA; PL = 160 W (CW); f = 894 MHz.
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
3 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
Table 8.
RF gain grouping
f1 = 894 MHz; f2 = 894.2 MHz
Code[1]
Gain (dB) for two-tone
Min
18.5
19
Max
19
C
D
E
F
19.5
20
19.5
20
20.5
21
G
20.5
[1] 0.2 overlap is allowed for measurement reproducibility.
001aag546
001aag547
60
21
60
22
G
(dB)
η
(%)
G
(dB)
η
D
(%)
p
D
p
G
p
G
p
19
40
20
40
η
D
η
D
17
15
20
18
16
20
0
240
0
120
0
80
160
0
40
80
P
(W)
P
(W)
L(AV)
L
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 894 MHz.
f = 894 MHz.
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2. Two-tone power gain and drain efficiency as
functions of average load power; typical values
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
4 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
001aag548
001aag549
0
0
IMD
(dBc)
IMD3
(dBc)
−20
−40
−60
−80
−20
IMD3
1
IMD5
IMD7
−40
−60
−80
2
3
4
0
40
80
120
0
40
80
120
P
(W)
P
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 894 MHz.
VDS = 28 V; Tcase = 25 °C; f = 894 MHz.
(1) IDq = 800 mA.
(2) IDq = 900 mA.
(3) IDq = 1000 mA.
(4) IDq = 1100 mA.
Fig 3. Intermodulation distortion a function of
average load power; typical values
Fig 4. IMD3 as a function of average load power;
typical values
001aag550
001aag551
21
50
−50
G
η
D
p
(dB)
(%)
ACPR
(dBc)
G
20
40
p
−60
ACPR
ACPR
400
19
18
17
16
30
20
10
0
η
D
600
−70
−80
0
20
40
60
80
P
100
(W)
0
20
40
60
80
P
100
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 894 MHz.
f = 894 MHz.
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
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BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
001aag552
001aag553
4
16
−56
EVM
(%)
ACPR
(dBc)
EVM
(%)
12
−60
−64
−68
−72
3
ACPR
400
EVM
EVM
8
2
1
0
M
4
EVM
rms
rms
0
0
20
40
60
80
P
100
(W)
0
20
40
60
η
(%)
D
L(AV)
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 894 MHz.
f = 894 MHz.
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
Fig 8. GSM EDGE ACPR and rms EVM as functions of
drain efficiency; typical values
001aag554
001aag555
20
40
20
G
η
G
p
p
D
(dB)
(%)
(dB)
G
p
1
19
30
19
2
3
18
17
16
20
10
0
18
17
16
η
D
28
32
36
40
44
L(AV)
48
28
32
36
40
44
L(AV)
48
(dBm)
P
(dBm)
P
VDS = 28 V; IDq = 1100 mA; f = 881.5 MHz.
Test signal: IS-95 with PAR = 9.9 dB at 0.01 %
probability.
VDS = 28 V; IDq = 1100 mA.
(1) f = 869 MHz.
(2) f = 881.5 MHz.
(3) f = 894 MHz.
Fig 9. CDMA power gain and drain efficiency as
functions of average load power; typical values,
measured in a CDMA demo test circuit
Fig 10. CDMA power gain as a function of average load
power at various frequencies; typical values,
measured in a CDMA demo test circuit
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
6 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
001aag556
−35
ACPR
(dBc)
−45
−55
−65
−75
ACPR
750
ACPR
1980
28
32
36
40
44
L(AV)
48
(dBm)
P
VDS = 28 V; IDq = 1100 mA; Tcase = 25 °C; f = 881.5 MHz.
Fig 11. CDMA ACPR at 750 kHz and at 1980 kHz as functions of average load power; typical values, measured in a
CDMA demo test circuit
8. Test information
V
DD
V
bias
C6
R1
C7
C8
L8
C9
C10
L5
L6
C5
L4
L7
L3
RF in
RF out
L10
C1
C4
L1
L2
L9
C3
C2
001aag557
See Table 9 for a list of components
Fig 12. Circuit schematic for 894 MHz production test circuit
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
7 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
+V
V
DD
bias
L6
C7 C8 C9
C10
L5
C6
R1
C5
L1
C1
L2
L10
L9
C3
L3
L4
L7
L8
C2
C4
BLF4G10LS-160
BLF4G10LS-160
Output-Rev1
Input-Rev1
001aag593
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr = 6.15 and
thickness = 0.635 mm.
See Table 9 for a list of components.
Fig 13. Component layout for 894 MHz production test circuit
Table 9.
List of components (see Figure 12 and Figure 13).
Component
Description
Value
Remarks
[1]
[1]
[1]
C1, C4, C6, C7 multilayer ceramic chip 68 pF
capacitor
C2
multilayer ceramic chip 1.5 pF
capacitor
C3
multilayer ceramic chip 1.4 pF
capacitor
C5, C9
C8
tantalum capacitor
ceramic capacitor
electrolytic capacitor
stripline
10 µF
1 µF
1812X7R105KL2AB
C10
L1
220 µF
[2]
[2]
[2]
(W × L) 0.914 mm × 10.160 mm
(W × L) 0.914 mm × 24.384 mm
L2
stripline
L3
tapered stripline
(W1 × W2 × L)
0.914 mm × 19.812 mm × 11.024 mm
[2]
[2]
[2]
[2]
[2]
L4
L5
L6
L7
L8
stripline
(W × L) 19.812 mm × 21.438 mm
(W × L) 0.914 mm × 42.342 mm
(W × L) 1.524 mm × 42.418 mm
(W × L) 17.221 mm × 22.479 mm
stripline
stripline
stripline
tapered stripline
(W1 × W2 × L)
17.221 mm × 0.914 mm × 20.625 mm
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
8 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
Table 9.
List of components (see Figure 12 and Figure 13). …continued
Component
Description
stripline
Value
Remarks
[2]
[2]
L9
(W × L) 0.914 mm × 19.126 mm
(W × L) 0.914 mm × 6.858 mm
L10
R1
stripline
SMD resistor
5.1 Ω
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr = 6.15 and
thickness = 0.635 mm.
V
(12 V - 28 V)
Q1
bias
R1
R2
R4
R3
C3
C4
V
(28 V)
C11
R6
DD
C6
R5
R10
R9
R7
R8
C8
C9
L8
C10
L5
L6
C5
Q2
C7
L4
L7
L3
Q3
RF in
RF out
L10
C1
C12
L1
L2
L9
C2
001aag559
See Table 10 for a list of components
Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
9 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
V
(12 V - 28 V)
C3
V
(28 V)
DD
bias
R9 Q2
Q1
L6
C8 C9 C10
C4
R6
R10
C6
R1
R5
R7
C11
L5
R2
R3
R8
C7
R4
C5
Q3
L1
C1
L2
L10
L9
L3
L4
L7
L8
C12
C2
BLF4G10LS-160
BLF4G10LS-160
CDMA out
CDMA in
001aag594
The other side is unetched and serves as a ground plane.
See Table 10 for a list of components.
Fig 15. Component layout for 869 MHz to 894 MHz CDMA demo test circuit
Table 10. List of components (see Figure 14 and Figure 15).
Component
Description
Value
Remarks
[1]
[1]
C1, C6, C8
multilayer ceramic chip
capacitor
68 pF
C2, C7
multilayer ceramic chip
capacitor
1.3 pF
C3, C4
C5, C10
C9
ceramic capacitor
tantalum capacitor
ceramic capacitor
electrolytic capacitor
100 nF
10 µF
1 µF
C11
2200 µF
18 pF
[1]
C12
multilayer ceramic chip
capacitor
[2]
[2]
[2]
L1
L2
L3
stripline
(W × L) 0.914 mm × 10.160 mm
(W × L) 0.914 mm × 24.384 mm
stripline
tapered stripline
(W1 × W2 × L)
0.914 mm × 19.812 mm × 11.024 mm
[2]
[2]
[2]
[2]
[2]
L4
L5
L6
L7
L8
stripline
(W × L) 19.812 mm × 21.438 mm
(W × L) 0.914 mm × 42.342 mm
(W × L) 1.524 mm × 42.418 mm
(W × L) 17.221 mm × 22.479 mm
stripline
stripline
stripline
tapered stripline
(W1 × W2 × L)
17.221 mm × 0.914 mm × 20.625 mm
[2]
L9
stripline
(W × L) 0.914 mm × 19.126 mm
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
10 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
Table 10. List of components (see Figure 14 and Figure 15). …continued
Component
Description
stripline
Value
Remarks
[2]
L10
R1, R2
R3
(W × L) 0.914 mm × 6.858 mm
SMD resistor
SMD resistor
potentiometer
SMD resistor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
voltage regulator
transistor
430 Ω
300 Ω
200 Ω
2 kΩ
R4
R5
R6
1.1 kΩ
11 kΩ
5.1 Ω
5.1 kΩ
910 Ω
R7
R8
R9
R10
Q1
78L08
Q2
2N2222
Q3
BLF4G10-160
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr = 6.15 and
thickness = 0.635 mm.
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
11 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 16. Package outline SOT502A
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
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BLF4G10LS-160
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UHF power LDMOS transistor
10. Abbreviations
Table 11. Abbreviations
Acronym
ACPR
CDMA
CW
Description
Adjacent Channel Power Ratio
Code Division Multiple Access
Continuous Waveform
EDGE
EVM
Enhanced Data GSM Environment
Error Vector Magnitude
GSM
Global System for Mobile communications
CDMA Interim Standard 95
IS-95
LDMOS
LDMOST
PAR
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
RF
RMS
Root Mean Square
SMD
Surface-Mount Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 12. Revision history
Document ID
Release date
20070619
Data sheet status
Change notice
Supersedes
BLF4G10LS-160_1
Product data sheet
-
-
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
13 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
12.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BLF4G10LS-160_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
14 of 15
BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
7.1
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 June 2007
Document identifier: BLF4G10LS-160_1
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