PBSS8110T,215 [NXP]
PBSS8110T - 100 V, 1 A NPN low VCEsat (BISS) transistor TO-236 3-Pin;
| 型号： | PBSS8110T,215 |
| 厂家： | 
NXP |
| 描述： | PBSS8110T - 100 V, 1 A NPN low VCEsat (BISS) transistor TO-236 3-Pin 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS8110T
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product data sheet
2003 Dec 22
Supersedes data of 2003 Jul 28
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
QUICK REFERENCE DATA
FEATURES
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
• SOT23 package
collector-emitter voltage
collector current (DC)
100
1
V
A
A
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
ICM
repetitive peak collector
current
3
RCEsat
equivalent on-resistance
200
mΩ
APPLICATIONS
PINNING
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
PIN
1
DESCRIPTION
base
2
emitter
3
collector
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
handbook, halfpage
3
3
2
– LCD backlighting.
• Peripheral drivers
1
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
1
2
– Inductive load driver (e.g. relays,
buzzers and motors).
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
MARKING
TYPE NUMBER
PBSS8110T
MARKING CODE(1)
*U8
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
ORDERING INFORMATION
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
TYPE NUMBER
NAME
VERSION
PBSS8110T
2003 Dec 22
−
SOT23
2
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
120
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
100
5
open collector
1
ICM
limited by Tj max
3
IB
300
300
480
150
+150
+150
mA
mW
mW
°C
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 2
Tj
junction temperature
Tamb
Tstg
operating ambient temperature
storage temperature
−65
−65
°C
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
MLE354
500
handbook, halfpage
P
tot
(mW)
400
(1)
300
(2)
200
100
0
0
40
80
120
160
(°C)
T
amb
(1) FR4 PCB; 1 cm2 copper mounting pad for collector.
(2) Standard footprint.
Fig.2 Power derating curves.
2003 Dec 22
3
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
417
UNIT
K/W
K/W
Rth( j-a)
thermal resistance from junction to
ambient
260
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
mle356
3
10
(1)
Z
th
(2)
(3)
(K/W)
(4)
(5)
2
10
(6)
(7)
t
p
P
δ =
T
(8)
(9)
10
t
t
p
(10)
T
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
(1) δ = 1.0.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.0.
(2) δ = 0.75.
(4) δ = 0.03.
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
2003 Dec 22
4
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
mle355
3
10
Z
th
(K/W)
(1)
(2)
2
10
(3)
(4)
(5)
(6)
(7)
t
p
P
δ =
T
10
(8)
(9)
(10)
t
t
p
T
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
(1) δ = 1.0.
(2) δ = 0.75.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.0.
(4) δ = 0.03.
Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad.
2003 Dec 22
5
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 80 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
nA
μA
nA
nA
VCB = 80 V; IE = 0; Tj = 150 °C
VCE = 80 V; VBE = 0
−
−
ICES
IEBO
hFE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
−
−
100
100
−
VEB = 4 V; IC = 0
−
−
VCE = 10 V; IC = 1 mA
150
150
100
80
−
−
VCE = 10 V; IC = 250 mA
VCE = 10 V; IC = 500 mA; note 1
VCE = 10 V; IC = 1 A; note 1
−
500
−
−
−
−
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
−
40
mV
mV
mV
mΩ
V
−
−
120
200
200
1.05
0.9
−
IC = 1 A; IB = 100 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
IC = 1 A; IB = 100 mA; note 1
IC = 1 A; IB = 100 mA
−
165
−
−
VCE = 10 V; IC = 1 A
−
−
V
IC = 50 mA; VCE = 10 V;
f = 100 MHz
100
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
7.5
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Dec 22
6
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
MLE362
mle352
1.2
600
handbook, halfpage
V
BE
h
FE
(V)
(1)
(2)
(3)
(1)
(2)
0.8
400
0.4
200
(3)
0
10
0
10
−1
2
3
I
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
I
C
C
VCE = 10 V.
(1) Tamb = 100 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
VCE = 10 V.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 100 °C.
T
T
Fig.5 DC current gain as a function of collector
current; typical values.
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
MLE366
MLE353
1
1
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(V)
(V)
−1
−1
10
10
(1)
(2)
(3)
−2
−2
10
10
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
Tamb = 25 °C.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22
7
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
MLE363
mle357
10
10
handbook, halfpage
V
CEsat
(V)
V
BEsat
(V)
1
1
(1)
(2)
(3)
−1
10
10
−1
−2
10
10
−1
−2
−3
−4
−1
2
3
I
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
I
C
C
IC/IB = 10.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 100 °C.
T
IC/IB = 50.
Tamb = 25 °C.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
MLE364
MLE365
10
1
handbook, halfpage
handbook, halfpage
V
BEsat
(V)
V
BEsat
(V)
1
−1
−1
10
10
−1
2
3
4
−1
2
3
I
4
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
10
10
I
C
C
IC/IB = 20.
IC/IB = 50.
Tamb = 25 °C.
Tamb = 25 °C.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22
8
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
MLE359
mle358
3
2
10
(1)
(2)
handbook, halfpage
I
C
R
CEsat
(Ω)
(3)
(4)
(A)
1.6
(5)
(6)
2
10
(7)
(8)
1.2
0.8
10
1
(9)
(10)
0.4
0
(1)
(2)
(3)
2
−1
10
−1
3
I
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
V
CE
(V)
C
Tamb = 25 °C.
IC/IB = 10.
(1)
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Tamb = 100 °C.
(1) IB = 3500 μA.
(2) IB = 3150 μA.
(5) IB = 2100 μA.
(6) IB = 1750 μA.
(9) IB = 700 μA.
(10) IB = 350 μA.
(3)
I
B = 2800 μA.
(7)
IB = 1400 μA.
(4) IB = 2450 μA.
(8) IB = 1050 μA.
Fig.14 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
MLE360
MLE361
3
10
3
10
handbook, halfpage
handbook, halfpage
R
R
CEsat
CEsat
(Ω)
(Ω)
2
2
10
10
10
1
10
1
−1
−1
10
10
−1
2
3
I
4
−1
2
3
I
C
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
IC/IB = 20.
IC/IB = 50.
Tamb = 25 °C.
Tamb = 25 °C.
Fig.15 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.16 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Dec 22
9
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2003 Dec 22
10
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
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Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Dec 22
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp12
Date of release: 2003 Dec 22
Document order number: 9397 750 12008
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