PBSS8110T [NXP]
100 V, 1 A NPN low VCEsat (BISS) transistor; 100 V ，1 A NPN低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS8110T |
| 厂家： | 
NXP |
| 描述： | 100 V, 1 A NPN low VCEsat (BISS) transistor |
| 文件： | 总12页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS8110T
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
2003 Dec 22
Supersedes data of 2003 Jul 28
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
QUICK REFERENCE DATA
FEATURES
SYMBOL
PARAMETER
MAX. UNIT
• SOT23 package
VCEO
IC
collector-emitter voltage
collector current (DC)
100
1
V
A
A
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
ICM
repetitive peak collector
current
3
RCEsat
equivalent on-resistance
200
mΩ
APPLICATIONS
PINNING
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
PIN
DESCRIPTION
1
2
3
base
emitter
collector
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
handbook, halfpage
3
3
2
– LCD backlighting.
• Peripheral drivers
1
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
1
2
– Inductive load driver (e.g. relays,
buzzers and motors).
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
MARKING
TYPE NUMBER
PBSS8110T
MARKING CODE(1)
*U8
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NAME
VERSION
PBSS8110T
−
SOT23
2003 Dec 22
2
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
120
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
100
5
open collector
1
ICM
limited by Tj max
3
IB
300
300
480
150
+150
+150
mA
mW
mW
°C
Ptot
total power dissipation
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
T
Tj
junction temperature
Tamb
Tstg
operating ambient temperature
storage temperature
−65
−65
°C
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
MLE354
500
handbook, halfpage
P
tot
(mW)
400
(1)
300
(2)
200
100
0
0
40
80
120
160
(°C)
T
amb
(1) FR4 PCB; 1 cm2 copper mounting pad for collector.
(2) Standard footprint.
Fig.2 Power derating curves.
2003 Dec 22
3
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
UNIT
Rth( j-a)
thermal resistance from junction to
ambient
417
260
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
mle356
3
10
(1)
Z
th
(2)
(3)
(K/W)
(4)
(5)
2
10
(6)
(7)
t
p
P
δ =
T
(8)
(9)
10
t
t
p
(10)
T
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
(1) δ = 1.0.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.0.
(2) δ = 0.75.
(4) δ = 0.03.
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
2003 Dec 22
4
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
mle355
3
10
Z
th
(K/W)
(1)
(2)
2
10
(3)
(4)
(5)
(6)
(7)
t
p
P
δ =
T
10
(8)
(9)
(10)
t
t
p
T
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
(1) δ = 1.0.
(2) δ = 0.75.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.0.
(4) δ = 0.03.
Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad.
2003 Dec 22
5
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 80 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
nA
µA
nA
nA
VCB = 80 V; IE = 0; Tj = 150 °C
VCE = 80 V; VBE = 0
−
−
ICES
IEBO
hFE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
−
−
100
100
−
VEB = 4 V; IC = 0
−
−
VCE = 10 V; IC = 1 mA
150
150
100
80
−
−
VCE = 10 V; IC = 250 mA
VCE = 10 V; IC = 500 mA; note 1
VCE = 10 V; IC = 1 A; note 1
−
500
−
−
−
−
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
−
40
mV
mV
mV
mΩ
V
−
−
120
200
200
1.05
0.9
−
IC = 1 A; IB = 100 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
IC = 1 A; IB = 100 mA; note 1
IC = 1 A; IB = 100 mA
−
165
−
−
VCE = 10 V; IC = 1 A
−
−
V
IC = 50 mA; VCE = 10 V;
f = 100 MHz
100
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
7.5
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Dec 22
6
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
MLE362
mle352
1.2
600
handbook, halfpage
V
BE
h
FE
(V)
(1)
(2)
(3)
(1)
(2)
0.8
400
0.4
200
(3)
0
10
0
10
−1
2
3
I
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
I
C
C
VCE = 10 V.
VCE = 10 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −55 °C.
(3) Tamb = 100 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
MLE366
MLE353
1
1
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(V)
(V)
−1
−1
10
10
(1)
(2)
(3)
−2
−2
10
10
−1
2
3
I
4
−1
2
3
I
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
Tamb = 25 °C.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22
7
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
MLE363
mle357
10
10
handbook, halfpage
V
CEsat
(V)
V
BEsat
(V)
1
1
(1)
(2)
(3)
−1
10
10
−1
−2
10
−1
−2
−3
−4
−1
2
3
I
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
I
C
C
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
IC/IB = 50.
(3)
Tamb = 100 °C.
Tamb = 25 °C.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
MLE364
MLE365
10
1
handbook, halfpage
handbook, halfpage
V
BEsat
(V)
V
BEsat
(V)
1
−1
−1
10
10
−1
2
3
4
−1
2
3
I
4
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
10
10
I
C
C
IC/IB = 20.
IC/IB = 50.
Tamb = 25 °C.
Tamb = 25 °C.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22
8
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
MLE359
mle358
3
2
10
(1)
(2)
handbook, halfpage
I
C
R
CEsat
(Ω)
(3)
(4)
(A)
1.6
(5)
(6)
2
10
(7)
(8)
1.2
0.8
10
1
(9)
(10)
0.4
0
(1)
(2)
(3)
2
−1
10
−1
3
I
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
V
CE
(V)
C
Tamb = 25 °C.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) IB = 3500 µA.
(2) IB = 3150 µA.
(3) IB = 2800 µA.
(5) IB = 2100 µA.
(6) IB = 1750 µA.
(7) IB = 1400 µA.
(9) IB = 700 µA.
(10) IB = 350 µA.
(4)
IB = 2450 µA.
(8) IB = 1050 µA.
Fig.14 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
MLE360
MLE361
3
10
3
10
handbook, halfpage
handbook, halfpage
R
R
CEsat
CEsat
(Ω)
(Ω)
2
2
10
10
10
1
10
1
−1
−1
10
10
−1
2
3
I
4
−1
2
3
I
C
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
IC/IB = 20.
amb = 25 °C.
IC/IB = 50.
amb = 25 °C.
T
T
Fig.15 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.16 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Dec 22
9
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Dec 22
10
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Dec 22
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp12
Date of release: 2003 Dec 22
Document order number: 9397 750 12008
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