PSMN7R0-100PS [NXP]
N-channel 100V 6.8 mΩ standard level MOSFET in TO220; 在TO220 N沟道100V 6.8 mΩ的标准电平MOSFET型号: | PSMN7R0-100PS |
厂家: | NXP |
描述: | N-channel 100V 6.8 mΩ standard level MOSFET in TO220 |
文件: | 总16页 (文件大小:243K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Rev. 02 — 7 January 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
Suitable for standard level gate drive
and conduction losses
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
100
100
V
A
[1]
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
269
175
W
Tj
junction temperature
-55
°C
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup = 100 V;
unclamped; RGS = 50 Ω
-
-
315
mJ
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 14
and 17
-
-
36
-
-
nC
nC
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 17
and 14
125
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Table 1.
Quick reference …continued
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max Unit
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
-
-
-
12
mΩ
mΩ
VGS = 10 V; ID = 15 A;
5.4
6.8
Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN7R0-100PS TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
2 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
85
A
[1]
-
100
475
269
175
175
260
A
IDM
peak drain current
-
A
Ptot
Tstg
Tj
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
°C
-55
-55
-
junction temperature
Tsld(M)
peak soldering
temperature
Source-drain diode
[1]
IS
source current
peak source current
Tmb = 25 °C;
-
-
100
475
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
315
mJ
drain-source avalanche Vsup = 100 V; unclamped; RGS = 50 Ω
energy
[1] Continuous current is limited by package
03aa16
003aad558
120
150
ID
(A)
P
(%)
der
80
100
(1)
40
50
0
0
0
50
100
150
200
0
50
100
150
Tmb ( C)
200
°
T
mb
(°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
3 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
003aad559
103
I
D
Limit R
= V / I
DS D
DSon
(A)
t
= 10 s
μ
p
102
100
s
μ
10
1
DC
1 ms
10 ms
100 ms
10-1
1
10
102
103
V
(V)
DS
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
4 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
see Figure 4
-
0.3
0.56
K/W
Rth(j-a)
thermal resistance from junction to
ambient
vertical in free air
-
60
-
K/W
003aad560
1
Zth (j-mb)
(K/W)
= 0.5
δ
10-1
10-2
10-3
10-4
0.2
0.1
0.05
0.02
tp
δ =
P
T
single shot
t
tp
T
1e-6
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
5 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
90
100
1
-
-
-
-
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11 and 10
2
-
3
-
4
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
4.6
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
150
5
µA
µA
nA
nA
mΩ
0.08
10
10
-
IGSS
100
100
12
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
-
-
-
15
19
6.8
-
mΩ
mΩ
Ω
VGS = 10 V; ID = 15 A; Tj = 25 °C;
5.4
0.74
see Figure 13
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 17 and 14
-
125
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
-
100
28
-
-
nC
nC
QGS
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 17
QGS(th)
QGS(th-pl)
QGD
pre-threshold
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14
-
-
-
-
19.4
9
-
-
-
-
nC
nC
nC
V
post-threshold
gate-source charge
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 17
36
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14 and 17
4.3
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 15
-
-
-
6686
438
-
-
-
pF
pF
pF
reverse transfer
capacitance
272
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
6 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Table 6.
Symbol
td(on)
tr
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
ns
turn-on delay time
rise time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
-
-
-
-
34.6
45.6
103.9
49.5
-
-
-
-
ns
td(off)
tf
turn-off delay time
fall time
ns
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
-
0.8
1.2
V
trr
reverse recovery time
recovered charge
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 50 V
-
-
64
-
-
ns
Qr
167
nC
003aad562
003aad566
300
ID
(A)
240
12000
20
6
5.5
C
(pF)
10
Cis s
10000
5
180
120
60
8000
6000
4000
2000
Crs s
4.5
VGS (V) = 4
0
0
1
2
3
4
0
5
10
15
20
GS (V)
V
DS (V)
V
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
7 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
003aad572
003aad568
240
60
ID
gfs
(A)
(S)
180
120
60
45
30
T = 175 C
°
j
15
0
T = 25 C
°
j
0
0
50
100
150
200
250
ID (A)
0
2
4
6
VGS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aad571
003aad280
5
40
V
GS(th)
(V)
RDSon
(m
)
Ω
4
3
2
1
0
max
30
20
10
0
typ
min
−60
0
60
120
180
0
5
10
15
20
VGS (V)
T (°C)
j
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
8 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
03aa35
003aad774
−1
10
3.2
I
D
(A)
a
min
typ
max
−2
−3
−4
−5
−6
10
2.4
10
10
10
10
1.6
0.8
0
-60
0
60
120
180
0
2
4
6
T (°C)
j
V
GS
(V)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad563
20
V
DS
VGS (V) = 4.5
RDSon
(m
)
Ω
I
D
15
10
5
V
GS(pl)
V
GS(th)
V
GS
5
6
Q
Q
GS1
GS2
Q
Q
GD
GS
10
80
20
Q
G(tot)
003aaa508
0
0
20
40
60
100
ID (A)
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
9 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
003aad570
003aad567
104
100
IS
(A)
Ciss
C
(pF)
80
60
103
T = 175 C
°
j
40
20
0
Coss
25 C
°
Crss
102
10-1
1
10
102
0
0.3
0.6
0.9
1.2
V
(V)
V
SD (V)
DS
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
10 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
003aad569
10
VGS
(V)
8
6
4
2
0
VDS = 50V
0
35
70
105
140
G (nC)
Q
Fig 17. Gate-source voltage as a function of gate charge; typical values
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
11 of 16
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NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 18. Package outline SOT78 (TO-220AB)
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
12 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN7R0-100PS_2
Modifications:
20100107
Product data sheet
-
PSMN7R0-100PS_1
• Status changed from objective to product.
20090917 Objective data sheet
PSMN7R0-100PS_1
-
-
PSMN7R0-100PS_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
13 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
9.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
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replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PSMN7R0-100PS_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
14 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
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be subject to export control regulations. Export might require a prior
authorization from national authorities.
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use of
the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN7R0-100PS_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 January 2010
15 of 16
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 January 2010
Document identifier: PSMN7R0-100PS_2
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