PSMN7R0-100XS [NXP]
55A, 100V, 0.0068ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, FULL PACK-3;
| 型号： | PSMN7R0-100XS |
| 厂家： | 
NXP |
| 描述： | 55A, 100V, 0.0068ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, FULL PACK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN7R0-100XS
O-220F
T
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 3 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
Isolated package
and conduction losses
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
55
Unit
V
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
-
-
-
-
-
-
ID
A
Ptot
total power dissipation
57.7
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
-
5.4
6.8
mΩ
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 15 A; VDS = 50 V;
see Figure 14; see Figure 15
-
-
34
-
-
nC
nC
QG(tot)
121
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
see Figure 3
-
-
420
mJ
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
gate
mb
D
S
2
drain
3
source
G
mb
mounting base; isolated
mbb076
1
2 3
SOT186A (TO-220F)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN7R0-100XS
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
SOT186A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
V
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4
Tmb = 25 °C; see Figure 2
-
55
A
-
38.9
220
57.7
175
175
260
A
IDM
peak drain current
-
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
peak soldering temperature
-
W
°C
°C
°C
-55
-55
-
Tsld(M)
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
48
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
220
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω; see Figure 3
-
420
mJ
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
2 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aag573
03aa16
120
60
ID
(A)
50
P
(%)
der
80
40
30
20
10
0
40
0
0
50
100
150
200
Tmb ( C)
0
50
100
150
200
°
T
(°C)
mb
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag574
102
I
AL
(A)
(1)
10
(2)
1
10-3
10-2
10-1
1
10
t
(ms)
AL
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
3 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aag575
103
I
D
(A)
Limit R
= V / I
DS D
DSon
t =10
s
μ
102
p
100
s
μ
10
1
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
103
V
(V)
DS
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
4 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
2.35
55
Max
2.6
-
Unit
K/W
K/W
thermal resistance from junction to mounting base see Figure 5
-
-
thermal resistance from junction to ambient
vertical in free air
003aag576
10
Zth(j-mb)
(K/W)
= 0.5
δ
1
0.2
0.1
0.05
10-1
10-2
10-3
0.02
tp
δ =
P
T
t
tp
single shot
10-5
T
10-6
10-4
10-3
10-2
10-1
1
10
102
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
Cisol
Isolation characteristics
Parameter
Conditions
Min
Typ
10
-
Max
-
Unit
pF
V
[1]
isolation capacitance
RMS isolation voltage
-
-
Visol(RMS)
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
2500
waveform; clean and dust free
[1] f = 1 MHz
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
5 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
3
4
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
1
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
4.6
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 100 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
5
µA
µA
nA
nA
mΩ
-
100
100
100
6.8
IGSS
2
2
RDSon
drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 25 °C; see
Figure 12; see Figure 13
5.4
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 13
-
-
-
9.45
15.1
0.74
11.9
19
-
mΩ
mΩ
Ω
V
GS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 13
RG
internal gate resistance (AC)
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 14; see Figure 15
-
-
-
-
121
26.3
11
-
-
-
-
nC
nC
nC
nC
gate-source charge
QGS(th)
QGS(th-pl)
pre-threshold gate-source charge
post-threshold gate-source
charge
15.3
QGD
gate-drain charge
-
-
34
-
-
nC
V
VGS(pl)
gate-source plateau voltage
ID = 15 A; VDS = 50 V; see Figure 14;
see Figure 15
4.1
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16;
see Figure 17
-
6686
-
pF
Coss
Crss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
-
438
272
-
-
pF
pF
reverse transfer capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16;
see Figure 17
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 4 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
-
-
-
-
29
30
94
43
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
6 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
Table 7.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 18
-
0.76
1.2
V
trr
reverse recovery time
recovered charge
IS = 10 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 50 V
-
-
64
-
-
ns
Qr
167
nC
003aag577
003aag578
200
160
120
80
20
10
6.0
I
R
D
DSon
V
(V) = 5.0
(A)
(m
)
GS
Ω
16
4.8
4.6
12
8
4.4
4.2
40
4
0
0
0
1
2
3
4
4
8
12
16
20
V
(V)
V
(V)
DS
GS
Fig 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aag579
003aag580
200
120
I
g
D
fs
(A)
(S)
100
160
80
60
40
120
80
40
0
T = 175
C
°
T = 25 C
°
j
j
20
0
0
40
80
120
0
2
4
6
I
(A)
V
(V)
D
GS
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
7 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aad280
03aa35
−1
−2
−3
−4
−5
−6
5
10
I
V
D
GS(th)
(A)
(V)
min
typ
max
4
10
10
10
10
10
max
3
2
1
0
typ
min
−60
0
60
120
180
0
2
4
6
T (°C)
V
(V)
GS
j
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
003aag583
003aag654
3
16
5.0
V
(V) = 4.6
4.8
GS
a
R
DSon
(mΩ)
2.5
12
2
1.5
1
8
4
0
5.5
6.0
10
0.5
0
-60
0
60
120
180
0
40
80
120
160
200
T ( C)
I
(A)
°
j
D
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
8 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aag586
10
V
DS
V
GS
(V)
80V
I
D
8
50V
V
= 20V
V
GS(pl)
DS
6
4
2
0
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
40
80
120
160
Q
(nC)
G
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
003aag587
003aag643
104
12000
C
C
(pF)
10000
iss
C
iss
C
(pF)
8000
6000
103
C
4000
2000
0
rss
C
oss
C
rss
102
10-1
0
3
6
9
12
1
10
102
V
(V)
V
(V)
GS
DS
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 17. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
9 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aag588
200
I
S
(A)
160
120
80
40
0
T = 175
j
C
T = 25 C
°
j
°
0
0.4
0.8
1.2
1.6
V
(V)
SD
Fig 18. Source current as a function of source-drain voltage; typical values
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
10 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
P
A
A
1
q
D
1
mounting
base
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
c
w
M
e
e
1
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
(1)
(2)
T
w
L
A
A
b
b
c
D
D
1
E
e
e
j
K
L
L
1
P
Q
q
b
UNIT
mm
2
1
1
1
2
max.
1.1
0.9
1.4
1.0
2.7
1.7
0.6 14.4 3.30
0.4 13.5 2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5 10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
02-04-09
06-02-14
SOT186A
3-lead TO-220F
Fig 19. Package outline SOT186A (TO-220F)
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
11 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
9. Revision history
Table 8.
Document ID
PSMN7R0-100XS v.3 20120306
Revision history
Release date
Data sheet status
Change notice
Supersedes
Product data sheet
-
PSMN7R0-100XS v.2
Modifications:
• Status changed from preliminary to product.
• Various changes to content.
PSMN7R0-100XS v.2 20111021
Preliminary data sheet
-
PSMN7R0-100XS v.1
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
12 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes— NXP Semiconductors reserves the right to make
10.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet— A short data sheet is an extract from a full data sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and should not be relied upon to contain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local NXP Semiconductors sales office.
In case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
10.3 Disclaimers
Limited warranty and liability— Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial saleof NXP Semiconductors.
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
13 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
Terms and conditions of commercial sale— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products— Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-buslogo,ICODE,I-CODE,ITEC,Labelution
,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand
UCODE— are trademarks of NXP B.V.
non-automotive qualified products in automotive equipment or applications.
HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation.
11. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PSMN7R0-100XS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2012
14 of 15
PSMN7R0-100XS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Isolation characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
10.1
10.2
10.3
10.4
11
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 March 2012
Document identifier: PSMN7R0-100XS
相关型号：
PSMN7R0-30MLC
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower TechnologyProduction
NEXPERIA
PSMN7R0-30MLC,115
PSMN7R0-30MLC - N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
NXP
PSMN7R0-30YLC
N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction
NEXPERIA
PSMN7R0-30YLC,115
PSMN7R0-30YLC - N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin
NXP
©2020 ICPDF网 联系我们和版权申明