FDD6296 [ONSEMI]
快速开关，N 沟道，PowerTrench® MOSFET，30V，50A，8.8mΩ;
| 型号： | FDD6296 |
| 厂家： | 
ONSEMI |
| 描述： | 快速开关，N 沟道，PowerTrench® MOSFET，30V，50A，8.8mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
·
50A, 30 V
RDS(ON) = 8.8 mW @ VGS = 10 V
RDS(ON) = 11.3 mW @ VGS = 4.5 V
·
·
·
Low gate charge
Fast switching
Applications
·
·
DC/DC converter
High performance trench technology for extremely
low RDS(ON)
Power management
D
D
G
S
I-PAK
(TO-251AA)
G
D-PAK
(TO-252)
G D S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
± 20
50
VGSS
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
ID
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
A
15
Pulsed
100
PD
W
Power Dissipation
@TC=25°C
@TA=25°C
@TA=25°C
52
(Note 1a)
(Note 1b)
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
RqJC
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
RqJA
Package Marking and Ordering Information
Device Marking
Device
FDD6296
FDU2696
Package
Reel Size
13’’
Tape width
Quantity
2500 units
75
FDD6296
D-PAK (TO-252)
I-PAK (TO-251)
16mm
N/A
FDU6296
Tube
FDD6296/FDU6296 Rev. 2.1
Ó2004 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
IAS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A
Drain-Source Avalanche Current
165
15
mJ
A
Off Characteristics
Drain–Source Breakdown
Voltage
BVDSS
30
V
VGS = 0 V,
ID = 250 mA
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
29
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = 24 V,
VGS = 0 V
1
mA
±
100
IGSS
Gate–Body Leakage
nA
VGS =± 20 V, VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.7
3
V
VDS = VGS
,
ID = 250 mA
Gate Threshold Voltage
Temperature Coefficient
–0.5
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
7.5
9.0
9.3
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V, ID = 15 A, TJ=125°C
ID = 15 A
ID = 13 A
8.8
11.3
15.0
mW
gFS
Forward Transconductance
VDS = 5 V,
ID = 15 A
58
S
Dynamic Characteristics
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Ciss
Coss
Crss
RG
Input Capacitance
1440
400
140
1.3
pF
pF
pF
W
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
6
19
11
46
23
ns
ns
RGEN = 6 W
29
13
ns
ns
Qg
Qg
Qgs
Qgd
VDS = 15V, ID = 15 A, VGS = 10 V
22.5 31.5
nC
nC
nC
nC
VDS = 15V,
VGS = 5 V
ID = 15 A,
12.2
4
17
3.5
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.2
1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 3.2 A
Voltage
VSD
0.74
(Note 2)
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 15 A,
diF/dt = 100 A/µs
25
13
nS
nC
Qrr
FDD6296/FDU6296 Rev. 2.1
Electrical Characteristics (cont’d)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
R
qJA = 40°C/W when mounted on
b)
R
qJA = 96°C/W when mounted
a 1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package
RDS(ON)
current limitation is 21A
FDD6296/FDU6296 Rev. 2.1
Typical Characteristics
100
1.8
1.6
1.4
1.2
1
VGS=10V
6.0V
4.0V
VGS = 3.5V
80
60
40
20
0
4.5V
3.5V
4.0V
4.5V
5.0V
6.0V
10V
3.0V
0.8
0
20
40
60
80
100
0
1
2
3
4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.8
0.025
0.02
ID = 25A
ID = 50A
1.6
1.4
1.2
1
VGS = 10V
0.015
0.01
TA = 125oC
TA = 25oC
0.8
0.6
0.005
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
90
60
30
0
1000
100
VGS = 0V
VDS = 10V
10
TA = 125oC
1
25oC
TA =125oC
0.1
-55oC
-55oC
0.01
0.001
0.0001
25oC
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6296/FDU6296 Rev. 2.1
Typical Characteristics
1800
1200
600
0
10
f = 1MHz
VGS = 0 V
ID = 15A
VDS = 10V
8
Ciss
15V
6
20V
4
2
0
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
80
60
40
20
0
RDS(ON) LIMIT
SINGLE PULSE
R
qJA = 96°C/W
TA = 25°C
100
10
100µs
1ms
10ms
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
R
qJA = 96oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 96 °C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.0
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6296/FDU6296 Rev. 2.1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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