FDMA1027P [ONSEMI]
-20V双P沟道PowerTrench® MOSFET;
| 型号： | FDMA1027P |
| 厂家： | 
ONSEMI |
| 描述： | -20V双P沟道PowerTrench® MOSFET PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual, P-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(on)
−20 V
120 mꢀ @ −4.5 V
−3.0 A
160 mꢀ @ −2.5 V
240 mꢀ @ −1.8 V
-20 V, -3.0 A, 120 mW
FDMA1027P
Pin 1
D1
S1
General Description
G1
D2
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra−portable applications. It features two independent P−Channel
MOSFETs with low on−state resistance for minimum conduction
losses. When connected in the typical common source configuration,
bi−directional current flow is possible.
D2
D1
G2
S2
WDFN6 2x2, 0.65P
(MicroFET 2x2)
CASE 511DA
The MicroFET t 2x2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
MARKING DIAGRAM
Features
• −3.0 A, −20 V
&Z&2&K
027
♦ R
♦ R
♦ R
= 120 mꢀ at V = −4.5 V
GS
DS(on)
DS(on)
DS(on)
= 160 mꢀ at V = −2.5 V
= 240 mꢀ at V = −1.8 V
GS
GS
• Low Profile − 0.8 mm Maximum − In the New Package MicroFET
2x2 mm
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
027 = Device Code
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
PIN CONNECTIONS
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DSS
MOSFET Drain−Source Voltage
MOSFET Gate−Source Voltage
−20
1
2
3
6
5
4
D1
G2
S1
G1
D2
V
GSS
8
V
I
D
Drain Current
−Continuous (Note 1a)
−Pulsed
A
−3.0
−6
S2
P
D
Power Dissipation
(Note 1a)
W
1.4
0.7
1.8
0.8
(Note 1b)
(Note 1c)
(Note 1d)
ORDERING INFORMATION
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
†
J
STG
Shipping
Device
Package
FDMA1027P
WDFN6
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2023 − Rev. 2
FDMA1027P/D
FDMA1027P
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
86
Unit
Thermal Resistance for Single Operation, Junction to Ambient (Note 1a)
Thermal Resistance for Single Operation, Junction to Ambient (Note 1b)
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c)
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d)
°C/W
R
R
R
R
ꢁ
ꢁ
ꢁ
ꢁ
JA
JA
JA
JA
173
69
151
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
I
I
= −250 ꢂ A, V = 0 V
−20
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 ꢂ A, Referenced to 25°C
−
−12
mV/°C
ꢃ BVDSS
ꢃ TJ
D
I
Zero Gate Voltage Drain Current
V
V
= −16 V, V = 0 V
−
−
−
−
−1
ꢂ
A
DSS
GSS
DS
GS
I
Gate−Body Leakage Current
=
8 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
I
I
= −250 ꢂ A, V = V
GS
−0.4
−0.7
−1.3
V
GS(th)
D
DS
Gate Threshold Voltage Temperature
Coefficient
= −250 ꢂ A, Referenced to 25°C
−
2
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain−Source On−Resistance
V
V
V
V
= −4.5 V, I = −3.0 A
−
−
−
−
−
90
120
172
118
7
120
160
240
160
−
mꢀ
DS(on)
GS
GS
GS
GS
D
= −2.5 V, I = −2.5 A
D
= −1.8 V, I = −1.0 A
D
= −4.5 V, I = −3.0 A, T = 125°C
D
J
g
FS
Forward Transconductance
I
D
= −3.0 A, V = −5 V
S
DS
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −10 V, V = 0 V, f = 1 MHz
−
−
−
435
80
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
45
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= −10 V, I = −1 A
−
−
−
−
−
−
−
9
11
15
6
18
19
27
12
6
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 ꢀ
GEN
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= −10 V, I = −3.0 A,
4
nC
nC
nC
g
D
= −4.5 V
Q
0.8
0.9
−
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
−
−
−0.8
17
6
−1.1
−1.2
−
A
V
V
SD
Drain−Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V = 0 V, I = −1.1 A (Note 2)
GS S
t
rr
I = −3.0 A, di /dt = 100 A/ꢂ s
ns
nC
F
F
Q
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
FDMA1027P
NOTES:
1. R
2
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by design
ꢁ
ꢁ
JC
JA
while R
is determined by the user’s board design.
ꢁ
JA
JA
JA
JA
JA
2
a. R
b. R
c. R
d. R
= 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For single operation.
ꢁ
ꢁ
ꢁ
ꢁ
= 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation.
2
= 69°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For dual operation, configured in parallel.
= 151°C/W when mounted on a minimum pad of 2 oz copper. For dual operation, configured in parallel.
a. 86°C/W when mounted on
b. 173°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
c. 69°C/W when mounted on
d. 151°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ꢂ s, Duty Cycle < 2.0%
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3
FDMA1027P
TYPICAL CHARACTERISTICS
3
6
5
4
3
2
1
0
VGS = −4.5V
−3.5V
−2.5V
VGS = −1.5V
−2.0V
2.6
2.2
1.8
1.4
1
−3.0V
−1.8V
−1.8V
−2.0V
−2.5V
−3.0V
−1.5V
−3.5V
−4.5V
0.6
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
−V , DRAIN−SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.4
1.3
1.2
1.1
1
0.28
0.22
0.16
0.1
ID = −3.0 A
VGS = −4.5 V
ID = −1.5 A
o
TA = 125 C
TA = 25oC
0.9
0.8
0.04
0
2
4
6
8
10
−50 −25
0
25
50
75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
1
6
5
4
3
2
1
0
VDS = −5 V
VGS = 0 V
0.1
TA = 125oC
0.01
0.001
0.0001
TA = 125oC
25oC
−55oC
−55oC
25oC
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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4
FDMA1027P
TYPICAL CHARACTERISTICS (continued)
5
4
3
2
1
0
700
600
ID = −3.0 A
f = 1 MHz
VGS = 0 V
VDS = −5 V
500
−15 V
400
C
iss
−10 V
300
200
Coss
100
0
Crss
0
1
2
3
4
5
0
4
8
12
16
20
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
1
50
40
30
20
10
0
SINGLE PULSE
R
ꢁ JA = 173oC/W
T
A = 25oC
100us
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
DC
VGS = −4.5 V
0.1
SINGLE PULSE
R
ꢁ JA = 173oC/W
T
A = 25oC
0.01
0.0001 0.001 0.01 0.1
1
10
100 1000
0.01
0.1
1
10
100
−V , DRAIN−SOURCE VOLTAGE (V)
DS
t, TIME (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
0.1
0.01
100
1000
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511DA
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
2X
B
1.80
1.72
2.0
0.80(2X)
1.00(2X)
0.21
1.41
0.05
C
2.25
TOP VIEW
2X
0.42(6X)
PIN#1 IDENT
0.42(6X)
(0.10)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN
0.10
C
0.20 0.05
C
0.08
C
0.025 0.025
SEATING
PLANE
SIDE VIEW
NOTES:
A. CONFORM TO JADEC REGISTRATIONS MO−229,
VARIATION VCCC, EXCEPT WHERE NOTED.
2.00 0.05
1.64 0.05
B. DIMENSIONS ARE IN MILLIMETERS.
0.645 0.05
0.350
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
PIN#1 IDENT
(0.185)4X
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
3
0.275 0.05
(6X)
F. NON−JEDEC DUAL DAP
0.86 0.05
2.00 0.05
(0.57)
F
6
4
0.33 0.05
(6X)
0.65
0.10
0.05
C A B
1.30
C
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13615G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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