FDMC510P [ONSEMI]
-20V P沟道PowerTrench® MOSFET;型号: | FDMC510P |
厂家: | ONSEMI |
描述: | -20V P沟道PowerTrench® MOSFET 开关 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
−20 V
8 mW @ −4.5 V
9.8 mW @ −2.5 V
13 mW @ −1.8 V
17 mW @ −1.5 V
−18 A
-20 V, -18 A, 8.0 mW
FDMC510P
General Description
This P−Channel MOSFET is produce using onsemi’s advanced
®
Pin 1
POWERTRENCH process that has been optimized for r
switching performance and ruggedness.
,
DS(ON)
G
S
S
S
Features
D
D
D
D
• Max r
• Max r
• Max r
• Max r
= 8.0 mW at V = −4.5 V, I = −12 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
Top
Bottom
= 9.8 mW at V = −2.5 V, I = −10 A
GS
D
WDFN8 3.3x3.3, 0.65P
(MLP 3.3x3.3)
= 13 mW at V = −1.8 V, I = −9.3 A
GS
D
= 17 mW at V = −1.5 V, I = −8.3 A
GS
D
CASE 511DH
• High Performance Trench Technology for Extremely Low r
DS(on)
• High Power and Current Handling Capability in a Widely Used
MARKING DIAGRAM
Surface Mount Package
• 100% UIL Tested
FDMC
510P
ALYW
• HBM ESD Capability Level >2 kV Typical (Note 4)
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
• Battery Management
• Load Switch
FDMC510P= Device Code
A
= Assembly Site
L
YW
= Wafer Lot Number
= Assembly Start Week
PIN ASSIGNMENT
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
P−Channel MOSFET
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2022 − Rev. 4
FDMC510P/D
FDMC510P
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
−20
8
V
I
D
Continuous
T
C
= 25°C
−18
A
Continuous (Note 1a)
Pulsed
T = 25°C
A
−12
−50
E
Single Pulse Avalanche Energy
Power Dissipation
37
41
mJ
W
AS
P
T = 25°C
C
D
Power Dissipation (Note 1a)
T = 25°C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to + 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
Thermal Resistance, Junction to Case
3
°C/W
R
q
q
JC
R
Thermal Resistance, Junction to Ambient (Note 1a)
53
JA
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
JA
2
a. 53°C/W when mounted on a 1 in pad
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
www.onsemi.com
2
FDMC510P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−20
−
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25°C
−12
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −16 V, V = 0 V
−
−
−
−
−1
mA
DSS
GSS
DS
GS
I
=
8 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−0.4
−
−0.5
3
−1.0
−
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 μA, referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= −4.5 V, I = −12 A
−
−
−
−
−
−
6.4
7.6
9.2
11
8.0
9.8
13
17
12
−
mW
DS(on)
D
= −2.5 V, I = −10 A
D
= −1.8 V, I = −9.3 A
D
= −1.5 V, I = −8.3 A
D
= −4.5 V, I = −12 A, T = 125°C
8.5
75
D
J
g
FS
Forward Transconductance
= −5 V, I = −12 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −10 V, V = 0 V, f = 1 MHz
−
−
−
5910
840
7860
1120
1110
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
738
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
R
= −10 V, I = −12 A, V = −4.5 V,
−
−
−
−
−
−
−
−
15
34
27
55
540
272
116
70
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
338
170
83
ns
d(off)
t
f
ns
Q
g(TOT)
Q
g(TOT)
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to −4.5 V, V = −10 V, I = −12 A
nC
nC
nC
nC
DD
D
= 0 V to −2.5 V, V = −10 V, I = −12 A
50
DD
D
Q
Q
= −10 V, I = −12 A
6.3
20.4
gs
gd
D
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −12 A (Note 2)
−
−
−
−
−0.70
−0.53
35
−1.3
−1.2
57
V
SD
GS
S
= 0 V, I = −2 A (Note 2)
GS
S
t
Reverse Recovery Time
I = −12 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
20
32
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C; P−Ch: L = 3 mH, I = −5 A, VDD = −20 V, V = −4.5 V.
J
AS
GS
4. No gate overvoltage rating is implied.
www.onsemi.com
3
FDMC510P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
50
40
30
20
10
0
5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= −1.5 V
GS
4
3
2
1
0
V
= −4.5 V
V
= −1.2 V
GS
GS
V
GS
= −2.5 V
V
= −1.8 V
GS
V
GS
= −1.5 V
V
= −1.8 V
= −4.5 V
GS
V
GS
= −1.2 V
V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= −2.5 V
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
25
I
V
= −12 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= −4.5 V
GS
20
I
D
= −12 A
15
10
5
T = 125°C
J
T = 25°C
J
0
1.0
−75 −50 −25
0
25 50 75 100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
50
100
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
40
V
DD
= −5 V
10
1
T = 150°C
J
30
20
10
0
T = 150°C
J
T = 25°C
J
T = 25°C
J
0.1
0.01
T = −55°C
J
T = −55°C
J
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
4
FDMC510P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
4.5
3.0
1.5
0.0
20000
10000
I
D
= −12 A
C
iss
V
DD
= −8 V
V
= −12 V
DD
V
DD
= −10 V
C
oss
1000
400
f = 1 MHz
= 0 V
V
C
GS
rss
0
20
40
60
80
100
0.1
1
10
20
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
60
50
20
10
V
GS
= −4.5 V
40
30
20
10
0
T = 25°C
J
V
= −2.5 V
GS
T = 100°C
J
T = 125°C
J
LIMITED BY PACKAGE
50 75
R
= 3°C/W
q
JC
1
0.1
1
10
100
1000
25
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
1000
SINGLE PULSE
= 125°C/W
T = 25°C
A
100 ms
1 ms
R
q
JA
10
1
100
10
10 ms
THIS AREA IS
LIMITED BY r
100 ms
DS(on)
1 s
SINGLE PULSE
T = MAX RATED
10 s
DC
0.1
J
R
= 125°C/W
q
JA
1
T = 25°C
A
0.01
0.5
10−4 10−3 10−2 10−1
1
10
100 1000
0.01
0.1
1
10
80
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
www.onsemi.com
5
FDMC510P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY−CYCLEDESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR, D = t / t
1
2
SINGLE PULSE
= 125°C/W
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
R
q
JA
0.001
10−4
10−3
10 −2
t, RECTANGULAR PULSE DURATION (s)
10−1
1
10
1000
100
Figure 13. Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMC510P
FDMC510P
WDFN8 3.3x3.3, 0.65P (MLP 3.3x3.3)
(Pb−Free and Halide Free)
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
©2020 ICPDF网 联系我们和版权申明