FDMS030N06B [ONSEMI]
N 沟道，PowerTrench® MOSFET，60V，100A，3mΩ;
| 型号： | FDMS030N06B |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，60V，100A，3mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：959K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年1 月
FDMS030N06B
®
N 沟道PowerTrench MOSFET
60 V，100 A，3 m
特性
•
说明
RDS(on) = 2.4 m （典型值）@ VGS = 10 V, ID = 50 A
此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench® 工
艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓
越开关性能而定制的。
• 低RDS(on) 和高效的先进硅封装组合
• 快速开关速度
•
100% 经过UIL 测试
应用
• 用于ATX/ 服务器/ 电信PSU 的同步整流
• 符合RoHS 标准
• 电池保护电路
• 电机驱动和不间断电源
• 可再生系统
顶
底
引脚1
S
G
S
S
S
D
D
D
D
5
6
7
8
4
3
S
S
G
2
1
D
D
D
D
Power 56
MOSFET 最大额定值TC = 25°C 除非另有说明。
FDMS030N06B
符号
参数
单位
VDSS
VGSS
60
±20
V
漏极－源极电压
栅极－源极电压
V
- 连续(TC = 25°C)
- 连续(TA = 25°C)
- 脉冲
（说明1）
（说明2a）
（说明3）
（说明4）
100
ID
A
漏极电流
22.1
IDM
400
A
mJ
W
漏极电流
EAS
248
单脉冲雪崩能量
(TC = 25°C)
(TA = 25°C)
104
PD
功耗
（说明2a）
2.5
W
TJ,，TSTG
-55 至+150
°C
工作和存储温度范围
热性能
FDMS030N06B
符号
RJC
参数
单位
1.2
50
结至外壳热阻最大值
结至环境热阻最大值
°C/W
RJA
（说明2a）
www.fairchildsemi.com
©2010 飞兆半导体公司
1
FDMS030N06B Rev. C1
封装标识与定购信息
器件标识
器件
FDMS030N06B
封装
卷尺寸
带宽
数量
FDMS030N06B
Power 56
13 ”
12 mm
3000 个
电气特性TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
ID = 250 A, VGS = 0 V
60
-
-
-
-
V
漏极－源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
ID = 250 A，推荐选用25°C
0.03
V/°C
IDSS
IGSS
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
-
-
-
-
1
A
零栅极电压漏极电流
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 50 A
VDS = 10 V, ID = 50 A
2.5
3.3
2.4
119
4.5
3.0
-
V
m
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
-
-
5685
1720
59
7560
pF
pF
pF
pF
nC
nC
nC
V
输入电容
VDS = 30 V, VGS = 0 V
f = 1 MHz
Coss
2290
输出电容
Crss
-
-
-
-
-
-
-
-
-
反向传输电容
Coss(er)
Qg(tot)
Qgs
VDS = 30 V, VGS = 0 V
2504
75
能量相关输出电容
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
栅极平台电压
VDS = 30 V, ID = 50 A
30
V
GS = 0 V to 10 V
Qgd
14
Vplateau
Qsync
Qoss
5.4
（说明5）
VDS = 0 V, ID = 50 A
VDS = 30 V, VGS = 0 V
f = 1 MHz
66.2
174
1.05
nC
nC
总栅极电荷同步
输出电荷
ESR
等效串联电阻
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
39
20
52
16
88
50
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
V
V
DD = 30 V, ID = 50 A
GS = 10 V, RG = 4.7
114
42
（说明5）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
100
400
1.25
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 50 A
-
V
71
85
ns
nC
VGS = 0 V, ISD = 50 A
dIF/dt = 100 A/s
Qrr
注意：
-
反向恢复电荷
1. 硅限制I 额定值= 147 A。
D
2
2. R
取决于安装在FR-4 材质1.5 x 1.5 in. 电路板上1 in 焊盘和2 盎司铜焊盘上的器件。R
通过设计保证，而R
取决于用户的电路板设计。
JA
JC
CA
b. 125 °C/W，安装于
最小尺寸的2 盎司焊盘。
a. 50 °C/W，安装于
2
1 in 2 盎司焊盘。
3. 重复额定值：脉冲宽度受限于最大结温。
4. L = 0.3 mH，I = 40.7 A，V = 50 V，V = 10 V，开始T = 25°C。
AS
DD
GS
J
5. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2010 飞兆半导体公司
2
FDMS030N06B Rev. C1
典型性能特征
图1. 导通区域特性
200
图2. 传输特性
500
*Notes:
1. VDS = 10V
100
2. 250s Pulse Test
100
10
1
25oC
150oC
VGS = 15.0V
-55oC
10
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
0.05
0.1
1
3
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源极电流和温度
3.5
500
3.0
100
VGS = 10V
150oC
2.5
25oC
2.0
10
VGS = 20V
*Notes:
1. VGS = 0V
1.5
*Note: TC = 25oC
150
2. 250s Pulse Test
1.0
1
0.2
0
50
100
200
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷
10000
10
VDS = 12V
DS = 30V
DS = 48V
Ciss
V
V
8
6
4
2
0
Coss
1000
100
10
*Note:
1. VGS = 0V
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
Crss
= C + C
ds gd
oss
rss
*Note: ID = 50A
= C
gd
0
15
30
45
60
75
90
0.1
1
10
60
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2010 飞兆半导体公司
FDMS030N06B Rev. C1
3
典型性能特征（接上页）
图7. 击穿电压变化与温度
图8. 导通电阻变化与温度
1.8
1.06
1.6
1.4
1.2
1.0
0.8
0.6
1.04
1.02
1.00
0.98
0.96
0.94
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250A
2. ID = 50A
-80
-40
0
40
80
120 160
-80
-40
0
40
80
120
160
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与外壳温度
1000
150
VGS= 10V
100
10
120
90
1ms
10ms
100ms
DC
Operation in This Area
1
60
is Limited by R DS(on)
*Notes:
1. Ta = 25oC
0.1
30
2. TJ = 150oC
R
JC= 1.2oC/W
3. Single Pulse
0.01
0
25
50
75
100
125
150
0.01
0.1
1
10
100
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 输出电容(Eoss) 与漏极- 源极电压
图12. 非箝位电感开关能力
3.0
100
2.5
2.0
1.5
1.0
0.5
0
TJ = 25oC
10
TJ = 125oC
1
0.001 0.01
0.1
1
10
100
1,000
0
10
20
30
40
50
60
VDS, Drain to Source Voltage [V]
tAV, Time In Avalanche [ms]
www.fairchildsemi.com
©2010 飞兆半导体公司
FDMS030N06B Rev. C1
4
典型性能特征（接上页）
图13. 瞬态热响应曲线
2
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
Single pulse
*Notes:
1. ZJA(t) = 125oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
0.01
0.1
1
10
100
1000
t
1，矩形脉冲持续时间[ 秒]
www.fairchildsemi.com
©2010 飞兆半导体公司
5
FDMS030N06B Rev. C1
图14. 栅极电荷测试电路与波形
I
= 常量
G
图15. 阻性开关测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图16. 非箝位电感开关测试电路与波形
VGS
www.fairchildsemi.com
©2010 飞兆半导体公司
6
FDMS030N06B Rev. C1
图17. 二极管恢复dv/dt 峰值测试电路与波形
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2010 飞兆半导体公司
7
FDMS030N06B Rev. C1
图18. 总栅极电荷Qsync 测试电路与波形
VCC
Driver
VGS
(Driver)
t
t
VGS
(D UT)
10V
VDD
VR
G
DUT
RG
1
Qsync
t dt
V
RG
VGS
RG
www.fairchildsemi.com
©2010 飞兆半导体公司
FDMS030N06B Rev. C1
8
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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