FDMT800120DC [ONSEMI]

N 沟道,双 CoolTM 88 PowerTrench® MOSFET,120V,128A,4.2mΩ;
FDMT800120DC
型号: FDMT800120DC
厂家: ONSEMI    ONSEMI
描述:

N 沟道,双 CoolTM 88 PowerTrench® MOSFET,120V,128A,4.2mΩ

文件: 总9页 (文件大小:764K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.cn  
MOSFET – N-Channel,  
DUALꢀCOOL),  
POWERTRENCH)  
V
R
MAX  
I
D
MAX  
DS  
DS(on)  
120 V  
4.2 m@ 10 V  
6.4 m@ 6 V  
128 A  
120 V, 128 A, 4.2 mW  
FDMT800120DC  
 
Top  
Bottom  
ꢀꢁN MOSFET ꢃꢁonsemi ꢅꢁPOWERTRENCH ꢆ  
ꢇꢈ。ꢄ
ꢅ̕ᑠᤏ٬ꢁ
DUAL COOL ᑠᤏ൬ꢅꢆ
ר
׏
 
TDFNW8 8.3 x 8.4, 2P,  
DUAL COOL, OPTION 2  
CASE 507AR  
ईᖰŻᣠ෯ꢁr  
რ͓ሇ。  
׬
ꢇꢈᥡĮꢅꢉꢊ▏੣⋍ƽᓡԳꢅ  
DS(on)  
ꢁ  
MARKING DIAGRAM  
ꢉᣠଇȜr  
ꢉᣠଇȜr  
ꢉĮ r  
= 4.2 m(V = 10 V, I = 20 A)  
GS D  
DS(on)  
= 6.4 m(V = 6 V, I = 16 A)  
GS D  
٬
ꢊꢅꢄ̕෡ꢄ  
DS(on)  
DS(on)  
ꢉꢋꢌꢍꢄꢎꢏᥡꢐᑠᤏꢑꢒꢓꢔꢐꢑ  
8 x 8 mm MLP ꢄ  
MSL1 ꢖꢗ෡ꢄꢐꢑ  
100% UIL ꢓ  
ꢉꢚ
ר
RoHS ꢛꢜ  
800120  
A
WL  
= Device Code  
= Assembly Location  
= Wafer Lot  
✈  
OringFET / ꢔꢕრ͓  
׬
ꢝꢞꢟ  
DCDC ꢠ  
Y
W
= Year  
= Work Week  
ELECTRICAL CONNECTION  
G
S
D
D
D
D
S
S
N-Channel MOSFET  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 7 of this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
January, 2023 Rev. 3  
FDMT800120DCCN/D  
FDMT800120DC  
MOSFET ꢃꢄ(T = 25°C,ℴ∮ᣩᛄ៮)  
A
׶
ꢇ  
ꢈꢉ  
ꢅꢆ  
120  
ꢊꢋ  
V
V
V
⃯ᥡ⁰ᥡꢀի  
᧥ᥡ⁰ᥡꢀի  
⃯ᥡꢀἡ  
DS  
20  
V
GS  
I
D
128  
A
᪮ঽ  
᪮ঽ  
᪮ঽ  
Β  
T
= 25°C  
(5)  
(5)  
(1a)  
(4)  
(3)  
C
T
C
= 100°C  
81  
T = 25°C  
20  
A
767  
E
AS  
ԵΒ↺༉்Ჟ  
ѿ૧  
1350  
156  
mJ  
W
P
D
T
C
= 25°C  
ѿ૧  
T = 25°C  
A
(1a)  
3.2  
T , T  
ļ٬ƽ
സণꢁී
 
55 to +150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
(֢૓ᚡᝧ)  
ୢ᥼ꢀիᡕ᪗ᣠଇ⍭ൺȜꢁϷϚŔȜ
Ö
׏
úय。ୢ᥼ᡕ᪗Ûĵ{Ȝ,෦ៀẵƽ
Öѿ்,
׏
úොೄ
Ö,ᅑ
ڭ
 
׏
∰ሇ。  
⋍⑙ꢁ  
׶
ꢇ  
ꢈꢉ  
ꢅꢆ  
1.6  
0.8  
38  
ꢊꢋ  
°C/W  
R
ণೃ૶⋍ℋ  
ণೃ૶⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
(⍆᮸⁰ᥡ)  
(ၵ᮸⃯ᥡ)  
(1a)  
JC  
R
JC  
R
JA  
R
(1b)  
81  
JA  
R
(1i)  
15  
JA  
R
(1j)  
21  
JA  
R
(1k)  
9
JA  
www.onsemi.cn  
2
FDMT800120DC  
(T = 25°C,ℴ∮ᣩᛄ៮)  
J
׶
ꢇ  
ꢈꢉ  
Ἣᚥꢍꢎ  
ꢃꢏꢆ ꢐꢑꢆ ꢃꢄꢆ  
ꢊꢋ  
ꢒꢓꢁ  
BV  
⃯ᥡ⁰ᥡϛՏꢀի  
I
I
= 250 A, V = 0 V  
120  
V
DSS  
D
GS  
ϛՏꢀիꢁႆ
ߋ
ᝐ  
= 250 A֢25°C  
97  
mV/°C  
BVDSS  
TJ  
D
I
⇆᧥ᥡꢀի⃯ᥡꢀἡ  
⁰ᥡ⃯ꢀἡ  
V
V
= 96 V, V = 0 V  
1
A  
DSS  
GSS  
DS  
GS  
I
=
20 V, V  
= 0 V  
100  
nA  
GS  
DS  
᫪⑙ꢁ  
V
᧥ᥡೃ⁰ᥡ⃐Ȝի  
V
I
= V , I = 250 A  
2.0  
3.1  
4.0  
V
GS(th)  
GS  
DS  
D
᧥ᥡೃ⁰ᥡ⃐Ȝիꢁႆ
ߋ
ᝐ  
= 250 A֢25°C  
12  
mV/°C  
VGS(th)  
TJ  
D
r
⃯ᥡೃ⁰ᥡ∩ᇡො᫪ꢀℋ  
V
GS  
V
GS  
V
GS  
V
DS  
= 10 V, I = 20 A  
3.45  
4.6  
6.3  
69  
4.2  
6.4  
7.7  
mꢀ  
DS(on)  
D
= 6 V, I = 16 A  
D
= 10 V, I = 20 A, T = 125°C  
D
J
g
FS  
ױ
ᢸො  
= 5 V, I = 20 A  
S
D
ꢕꢖꢁ  
C
ͅꢀ඙  
V
DS  
= 60 V, V = 0 V, f = 1 MHz  
5605  
778  
27  
7850  
1090  
40  
pF  
pF  
pF  
iss  
GS  
C
Ϛꢀ඙  
oss  
C
֭
ױ
Āᩣꢀ඙  
᧥ᥡℋᑷ  
rss  
R
0.1  
1.4  
3.5  
g
ꢗꢒꢁ  
td  
V
V
= 60 V, I = 20 A,  
29  
18  
40  
9.5  
76  
48  
25  
15  
47  
33  
64  
19  
107  
68  
ns  
ns  
ns  
ns  
nC  
ො᫪ზ᪯៖⃄  
⛺ԧ៖⃄  
(on)  
DD  
GS  
D
= 10 V, R  
= 6 ꢀ  
GEN  
t
r
t
͓ឍზ᪯៖⃄  
ℝ៖⃄  
d(off)  
t
f
Q
ማ᧥ᥡꢀ็  
V
GS  
V
GS  
V
DD  
= 0 V 10 V, V = 60 V, I = 20 A  
DD D  
g(TOT)  
= 0 V 6 V, V = 60 V, I = 20 A  
DD  
D
Q
Q
᧥ᥡ⁰ᥡꢀ็  
= 60 V, I = 20 A  
nC  
nC  
gs  
D
᧥ᥡ⃯ᥡ݃Ҳ”ꢀ็  
gd  
ꢘ—ꢘꢙꢘ
ٱ
ꢁ  
⁰ᥡ⃯ᥡl
ٱ
ױ
ի  
V
SD  
0.7  
0.8  
87  
1.1  
1.2  
V
V
V
= 0 V, I = 2.9 A  
(2)  
(2)  
GS  
S
= 0 V, I = 20 A  
GS  
S
t
rr  
֭
ױ
៖⃄  
֭
ױ
ꢀ็  
I = 20 A, di/dt = 100 A/s  
F
139  
263  
ns  
Q
164  
nC  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
(֢૓ᚡᝧ)  
ℴ∮ᣩᛄ៮,ꢀᷴ⑙ሇጸ᨜ꢁϷϚŔ᠏ᐠϷἫᚥ᥁Ö⛻Ŕ‡
ڡ
ሇ்֢ୢ᥼ई⛽
׬
Ö⛻᪠ጜ,‡
ڡ
ሇ்
׏
⛾“ꢀᷴ⑙ሇጸ᨜  
Ϸሇ்֢⛽⛰。  
www.onsemi.cn  
3
FDMT800120DC  
⋍⑙ꢁ  
Symbol  
R
Parameter  
Ratings  
1.6  
0.8  
38  
Unit  
°C/W  
ণೃ૶⋍ℋ  
ণೃ૶⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
(⍆᮸⁰ᥡ)  
(ၵ᮸⃯ᥡ)  
(1a)  
(1b)  
(1c)  
(1d)  
(1e)  
(1f)  
JC  
R
JC  
R
JA  
R
81  
JA  
R
26  
JA  
R
34  
JA  
R
14  
JA  
R
16  
JA  
R
(1g)  
(1h)  
(1i)  
26  
JA  
R
60  
JA  
R
15  
JA  
R
(1j)  
21  
JA  
R
(1k)  
(1l)  
9
JA  
R
11  
JA  
:  
1. R  
᫪᪗൩᎕FR-4 ꢀᢿᥟŔ
Ö̾ൺ,ᚵꢀᢿᥟş✈ᓧൺŔ 2 oz ᾬ⋪ƨ,ୢ
ᐠЊR  
ꢂ✈ᐗŔꢀᢿᥟᚎᙱ̾ൺ。  
JA  
JA  
a) 38°C/W (൩᎕na 1ၓយශෘ  
2 ozᾬ⋪ƨ)  
b) 81°C/W (൩᎕nᣠ෯2ozᾬ⋪ƨ)  
c) ∩ᵂՊᷴ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
d) ∩ᵂՊᷴ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
e) ∩ᵂՊᷴ,45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
10-L41B-11 ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
f) ∩ᵂՊᷴ,45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
10-L41B-11 ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
g) 200 FPM ᷴἡ,ៀᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
h) 200 FPM ᷴἡ,ៀᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
i) 200 FPM ᷴἡ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
j) 200 FPM ᷴἡ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
k) 200 FPM ᷴἡ,45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
10-L41B-11 ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
ꢃ) 200 FPM ᷴἡ,45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
10-L41B-11 ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
2. ΒἫᚥ:௙Βඝႆ:< 300 msՀՊᶴ:< 2.0%。  
3. E 1350 mJ৚nᡇ஫ T = 25_CN-chL = 3 mHI = 30 AV = 120 VV = 10 V100%ꢃ᪗Ἣᚥ(L = 0.1 mH、  
AS  
AS  
J
AS  
DD  
GS  
I
= 93 A)  
4. ͓Β
ח
Ŕꢅꢆꢇꢈ,ꢉ֢
11 Ŕ SOA 
。  
5. ᙱꢋꢌАŔ᪮ঽꢀἡ¥nᣠଇণꢁ,ꢍꢎ᪮ঽꢀἡ෦ַnᝃ⋍Å֪ꢀᷴꢏꢐꢑ✈Ŕꢀᢿᥟᚎᙱ。  
www.onsemi.cn  
4
 
FDMT800120DC  
ꢐꢑ(T = 25°C,ℴ∮ᣩᛄ៮)  
J
320  
5
V
GS  
= 5.5 V  
V
GS  
= 10 V  
4
V
= 7 V  
GS  
V
= 6 V  
GS  
240  
160  
V
GS  
= 6.5 V  
V
= 6.5 V  
GS  
3
2
V
V
= 6 V  
GS  
80  
0
= 5.5 V  
1
0
GS  
V
GS  
= 10 V  
Pulse Duration = 80 s  
Duty Cycle = 0.5% Max  
Pulse Duration = 80 s  
Duty Cycle = 0.5% Max  
V
GS  
= 7 V  
160  
0
80  
240  
320  
1
2
3
4
5
0
I , Drain Current (A)  
D
V
DS  
, Drain to Source Voltage (V)  
 1. ꢖꢚꢛꢁ  
 2. ꢜꢝӶꢔ᫪ꢀℋꢀἡ
٬᧥ꢘ
իŔ
ߋ
 
2.5  
2.0  
1.5  
1.0  
0.5  
20  
15  
I
= 20 A  
GS  
D
Pulse Duration = 80 s  
Duty Cycle = 0.5% Max  
V
= 10 V  
I
D
= 20 A  
10  
5
T = 125°C  
J
T = 25°C  
J
0
75 50 25  
0
25  
50  
75 100 125 150  
4
5
6
7
8
9
10  
V
GS  
, Gate to Source Voltage (V)  
T , Junction Temperature (5C)  
J
 3. ꢜꢝӶꢔ᫪ꢀℋণꢁŔ
ߋ
 
 4. ꢔ᫪ꢀℋ⛾᧥ꢘ—իŔ
ߋ
 
320  
100  
320  
240  
V
GS  
= 0 V  
Pulse Duration = 80 s  
Duty Cycle = 0.5% Max  
10  
1
V
DS  
= 5 V  
T = 150°C  
J
T = 25°C  
160  
80  
0
J
0.1  
T = 25°C  
J
T = 55°C  
J
T = 150°C  
0.01  
J
T = 55°C  
J
0.001  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
2
3
4
5
6
7
8
V
GS  
, Gate to Source Voltage (V)  
V
SD  
, Body Diode Forward Voltage (V)  
 5. Āᩣ⑙ꢁ  
 6. ꢘ—ꢘꢙꢘ
ٱ
ױ
ի⛾ꢀἡŔ
ߋ
 
www.onsemi.cn  
5
FDMT800120DC  
ꢐꢑ(T = 25°C,ℴ∮ᣩᛄ៮) (continued)  
J
10  
8
10000  
I
D
= 20 A  
C
iss  
V
DD  
= 35 V  
1000  
C
V
DD  
= 60 V  
oss  
6
100  
10  
1
V
DD  
= 85 V  
4
C
rss  
2
0
f = 1 MHz  
= 0 V  
V
GS  
40  
80  
0.1  
100  
60  
20  
1
10  
0
V
DS  
, Drain to Source Voltage (V)  
Q , Gate Charge (nC)  
g
 8. ඙⛾ꢘ—իŔ
ߋ
 
 7. ᧥ꢘꢀ็⑙ꢁ  
150  
120  
90  
500  
100  
R
= 0.8°C/W  
JC  
V
GS  
= 10 V  
T = 25°C  
J
V
GS  
= 6 V  
T = 100°C  
J
10  
60  
30  
0
T = 125°C  
J
1
0.01  
100  
0.1  
1
1000  
25  
50  
75  
100  
125  
150  
10  
t , Time in Avalanche (ms)  
AV  
T , Case Temperature (5C)  
C
 9.
٭
ዿꢗꢒѻ  
 10. ꢃꢄ᪮ঽ⃯ꢀἡ⛾૓ꢁŔ
ߋ
 
2000  
1000  
40000  
Single pulse  
R
= 0.8°C/W  
JC  
10000  
1000  
100  
T
C
= 25°C  
10 s  
100  
10  
1
This Area is  
Limited by r  
DS(on)  
100 s  
1 ms  
Single Pulse  
T = Max Rated  
J
10 ms  
DC  
R
T
= 0.8°C/W  
Curve Bent to  
JC  
= 25°C  
Measured Data  
C
10  
10  
0.1  
0.1  
5  
4  
3  
2  
1  
500  
100  
10  
1
10  
10  
10  
10  
1
t, Pulse Width (s)  
V
DS  
, Drain to Source Voltage (V)  
 12. ꢊꢞΒꢃꢄѿ૧  
 11. ᵃ
ױ
ȯի൩͈࿅ļꢚ  
www.onsemi.cn  
6
FDMT800120DC  
ꢐꢑ(T = 25°C,ℴ∮ᣩᛄ៮) (continued)  
J
2
1
Duty Cycle Descending Order  
D = 0.5  
0.2  
P
DM  
t
0.1  
0.01  
1
0.1  
0.05  
0.02  
t
2
:  
0.01  
Z
(t) = r(t) x R  
= 0.8°C/W  
JC  
JC  
Single pulse  
R
JC  
ȜT = P  
x Z (t) + T  
JC C  
J
DM  
ՀՊᶴD = t /t  
1
2
0.001  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
1
t, Rectangular Pulse Duration (s)  
 13. ণೃ૶૓ɼ
ڭ
ꢂᣒএ  
⛾ꢅǁ቏  
ꢎ෡᎕  
ꢎ  
FDMT800120DC  
᎕  
՗ƨꢄꢏ  
՗ဆඝႆ  
Shipping  
800120  
TDFNW8 8.3 × 8.4, 2P,  
DUAL COOL, OPTION 2  
13”  
13.3 mm  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or sub-  
sidiaries in the United States and/or other countries.  
www.onsemi.cn  
7
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 2  
CASE 507AR  
ISSUE B  
DATE 29 MAR 2021  
GENERIC  
MARKING DIAGRAM*  
XXXX = Specific Device Code  
A
= Assembly Location  
WL = Wafer Lot Code  
Y
= Year Code  
W
= Work Week Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present. Some products  
may not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON95711G  
TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 2  
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