FGH25T120SMD-F155 [ONSEMI]
IGBT，1200V，25A，场截止沟槽;
| 型号： | FGH25T120SMD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，25A，场截止沟槽 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
1200 V, 25 A
FGH25T120SMD
Description
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
www.onsemi.com
C
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
G
• Low Saturation Voltage: V
= 1.8 V @ I = 25 A
C
CE(sat)
• 100% of the Parts Tested for I (Note 1)
E
LM
• High Input Impedance
E
• This Device is Pb−Free and is RoHS Compliant
C
G
Applications
• Solar Inverter, Welder, UPS & PFC Applications
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CH
MARKING DIAGRAMS
$Y&Z&3&K
FGH25T120
SMD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH25T120SMD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2020 − Rev. 4
FGH25T120SMD/D
FGH25T120SMD
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
C
Parameter
Collector to Emitter Voltage
Symbol
Ratings
Unit
V
V
CES
V
GES
1200
Gate to Emitter Voltage
25
V
Transient Gate to Emitter Voltage
30
V
Collector Current
T
T
T
= 25°C
= 100°C
= 25°C
I
50
25
A
C
C
C
C
Collector Current
A
Clamped Inductive Load Current (Note 1)
Pulsed Collector Current (Note 2)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
I
100
A
LM
I
100
A
CM
T
T
= 25°C
I
50
A
C
F
= 100°C
25
A
C
I
200
A
FM
T
T
= 25°C
P
428
W
W
°C
°C
°C
C
D
= 100°C
214
C
T
−55 to +175
−55 to +175
300
J
T
stg
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 600 V, V = 15 V, I = 100 A, R = 23 ꢀ, Inductive Load
CC
GE
C
G
2. Limited by Tjmax
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
0.35
1.4
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case, Max. (IGBT)
Thermal Resistance, Junction to Case, Max. (Diode)
Thermal Resistance, Junction to Ambient, Max.
R
ꢁ
JC
R
ꢁ
JC
R
40
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH25T120SMD
FGH25T120SMD−F155
TO−247−3LD
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
GE
V
CE
V
GE
= 0 V, I = 250 ꢂ A
1200
−
−
−
−
V
CES
C
Collector Cut−Off Current
G−E Leakage Current
I
= V
, V = 0 V
−
−
250
400
ꢂ A
nA
CES
CES
GES
GE
I
= V
, V = 0 V
CE
GES
ON CHARACTERISTICS
G−E Threshold Voltage
V
I
C
I
C
I
C
= 25 mA, V = V
GE
4.9
−
6.2
1.8
1.9
7.5
2.4
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 25 A, V = 15 V, T = 25°C
GE C
CE(sat)
= 25 A, V = 15 V, T = 175°C
−
GE
C
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2
FGH25T120SMD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
2800
105
60
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 600 V, I = 25 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
40
45
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 23 ꢀ ꢃ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
490
12
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1.74
0.56
2.30
40
mJ
mJ
mJ
ns
E
ts
t
t
V
= 600 V, I = 25 A,
= 23 ꢀ ꢃ V = 15 V,
GE
d(on)
CC C
R
G
t
r
48
ns
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
520
64
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
2.94
1.09
4.03
225
20
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
= 600 V, I = 25 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
128
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Parameter
Diode Forward Voltage
Symbol
Test Conditions
I = 25 A, T = 25°C
Min
−
Typ
2.8
Max
3.7
−
Unit
V
V
FM
F
C
I = 25 A, T = 175°C
−
2.1
V
F
C
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Reverse Recovery Energy
t
V
= 600 V, I = 25 A,
−
60
−
ns
A
rr
R
F
di /dt = 200 A/ꢂ s, T = 25°C
F
C
I
rr
−
6.6
−
Q
−
197
330
325
13
−
nC
ꢂ J
ns
A
rr
E
rec
V
R
= 600 V, I = 25 A,
−
−
F
dI /dt = 200 A/ꢂ s, T = 175°C
F
C
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
t
−
−
rr
rr
I
−
−
Q
−
2113
−
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH25T120SMD
TYPICAL PERFORMANCE CHARACTERISTICS
100
80
60
40
20
0
100
T
= 175°C
T
= 25°C
C
C
15 V
15 V
80
60
40
20 V
20 V
12 V
12 V
10 V
10 V
20
0
V
= 8 V
GE
V
GE
= 8 V
0.0
2.0
4.0
6.0
8.0
10.0
0.0
2.0
4.0
6.0
8.0
10.0
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
100
3.5
Common Emitter
Common Emitter
GE
V
= 15 V
V
= 15 V
GE
T
T
= 25°C
C
C
80
60
40
20
0
3.0
2.5
2.0
1.5
1.0
= 175°C
50 A
25 A
= 15 A
I
C
0.0
1.0
2.0
3.0
4.0
5.0
25
50
75
100 125
150 175
T
C,
Case Temperature (°C)
V
CE
, Collector−Emitter Voltage (V)
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 3. Typical Saturation Voltage
Characteristics
20
15
10
5
20
16
12
8
Common Emitter
C
Common Emitter
C
T
= 25°C
T
= 175°C
25 A
25 A
50 A
50 A
I
C
= 15 A
I
C
= 15 A
4
0
0
16
20
4
8
12
20
4
8
12
16
V
GE
, Gate−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. VGE
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4
FGH25T120SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
10000
1000
15
Common Emitter
T
= 25°C
C
C
ies
400 V
= 200 V
12
9
600 V
V
CC
C
oes
res
6
100
20
Common Emitter
= 0 V, f = 1 MHz
C
3
C
V
GE
T
= 25°C
0
1
30
0
10
, Collector−Emitter Voltage (V)
50
100
150
200
250
V
CE
Q , Gate Charge (nC)
g
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
300
100
10000
1000
Common Emitter
V
CC
= 600 V, V = 15 V
GE
t
d(off)
I
C
= 25 A
T
C
T
C
= 25°C
= 175°C
100
10
t
r
t
f
Common Emitter
= 600 V, V = 15 V
V
t
CC
GE
d(on)
I
T
T
= 25 A
C
1
= 25°C
= 175°C
C
C
0.1
10
0
14
28
42
56
70
0
14
28
42
56
70
R , Gate Resistance (ꢀ)
G
R , Gate Resistance (ꢀ)
G
Figure 10. Turn−Off Characteristics
Figure 9. Turn−On Characteristics
vs. Gate Resistance
vs. Gate Resistance
100
10
1
300
100
Common Emitter
Common Emitter
V
T
= 15 V, R = 23 ꢀ
= 25°C
V
I
= 600 V, V = 15 V
= 25 A
GE
G
CC
GE
C
C
T
C
= 175°C
T
C
T
C
= 25°C
= 175°C
t
r
E
on
t
d(on)
E
off
10
0.1
0
10
20
30
40
50
0
14
28
42
56
70
I , Collector Current (A)
C
R , Gate Resistance (ꢀ)
G
Figure 12. Turn−On Characteristics
Figure 11. Switching Loss vs. Gate
Resistance
vs. Collector Current
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5
FGH25T120SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
100
Common Emitter
V
GE
= 15 V, R = 23 ꢀ
G
t
d(off)
T
C
T
C
= 25°C
= 175°C
10
1
E
on
t
f
10
1
Common Emitter
= 15 V, R = 23
V
ꢀ
E
GE
= 25°C
= 175°C
G
off
T
C
T
C
0.1
0
10
20
30
40
50
50
0
10
20
30
40
I
C,
Collector Current (A)
I , Collector Current (A)
C
Figure 14. Switching Loss vs. Collector
Current
Figure 13. Turn−Off Characteristics
vs. Collector Current
200
150
100
50
500
100
V
= 600 V
CE
I MAX(Pulse)
C
Load Current : Peak of Square Wave
10 ꢂ s
100 ꢂ s
Duty Cycle: 50%
T
C
= 100°C
10
1
Power Dissipation =167 W
1 ms
I MAX(Continuous)
C
10 ms
DC Operation
Single Nonrepetitive
Pulse T = 25°C
C
0.1 Curves must be derated
linearly with increase
in temperature.
T
C
= 100°C
0
0.01
1k
10k
100k
1M
1
10
100
1000
f, Switching Frequency (Hz)
V
CE
, Collector−Emitter Voltage (V)
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
100
10
1
16
T
C
T
C
= 25°C
= 175°C
14
12
T
= 175°C
C
di/dt = 200 A/ꢂ s
10
8
6
4
2
di/dt = 100 A/ꢂ s
di/dt = 200 A/ꢂ s
T
C
= 25°C
di/dt = 100 A/ꢂ s
5
50
0
1
2
3
4
0
10
20
30
40
I , Forward Current (A)
F
V , Forward Voltage (V)
F
Figure 18. Reverse Recovery Current
Figure 17. Forward Characteristics
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6
FGH25T120SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
600
500
400
300
200
100
0
3000
T
C
T
C
= 25°C
T
C
T
C
= 25°C
= 175°C
= 175°C
2500
2000
1500
1000
di/dt = 200 A/ꢂ s
di/dt = 100 A/ꢂ s
di/dt = 200 A/ꢂ s
di/dt = 100 A/ꢂ s
di/dt = 100 A/ꢂ s
di/dt = 200 A/ꢂ s
500
0
di/dt = 100 A/ꢂ s
di/dt = 200 A/ꢂ s
0
10
20
30
40
50
0
10
20
30
40
50
I , Forward Current (A)
F
I , Forward Current (A)
F
Figure 20. Stored Charge
Figure 19. Reverse Recovery Time
0.5
0.5
0.1
0.3
0.1
0.05
0.02
0.01 0.01
P
DM
Single Pulse
t
1
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢁ jc + T
j
C
1E−3
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration (sec)
Figure 21. Transient Thermal Impedance of IGBT
2
1
0.5
0.3
0.1
0.1
0.05
P
DM
0.02
0.01
t
1
t
2
Single Pulse
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢁ jc + T
0.01
j
C
0.005
−5
−2
−1
0
−4
−3
10
10
10
10
10
10
Rectangular Pulse Duration (sec)
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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相关型号：
FGH25T120SMD_F155
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT, TO-247G03, 3 PIN
FAIRCHILD
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