FGH30S130P [FAIRCHILD]
Shorted AnodeTM IGBT; 短路AnodeTM IGBT
| 型号： | FGH30S130P |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Shorted AnodeTM IGBT |
| 文件： | 总8页 (文件大小：665K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2012
FGH30S130P
Shorted Anode IGBT
TM
Features
General Description
•
•
•
•
High speed switching
Low saturation voltage: V
High input impedance
RoHS compliant
Using advanced Field Stop Trench and Shorted Anode technol-
ogy, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior
conduction and switching performances, and easy parallel oper-
ation with exceptional avalanche capability. This device is
designed for induction heating and microwave oven.
=1.75V @ I = 30A
CE(sat)
C
Applications
•
Induction Heating and Microwave Oven
•
Soft Switching Applications
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
Ratings
1300
±25
Units
V
V
Collector to Emitter Voltage
V
V
A
A
A
CES
GES
Gate to Emitter Voltage
Collector Current
o
@ T = 25 C
60
C
I
C
o
Collector Current
@ T = 100 C
30
C
I
I
I
Pulsed Collector Current
90
CM (1)
o
Diode Continuous Forward Current
60
A
@ T = 25 C
F
F
C
o
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
30
500
A
@ T = 100 C
C
o
@ T = 25 C
W
W
C
P
D
o
@ T = 100 C
250
C
o
T
-55 to +175
-55 to +175
C
J
o
T
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.3
Units
o
R
R
(IGBT)
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
--
--
C/W
θJC
o
40
C/W
θJA
Notes:
1: Limited by Tjmax
©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH30S130P
FGH30S130P
TO-247
-
-
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= 1300, V = 0V
-
-
-
-
1
mA
nA
CES
GES
CE
GE
GE
I
= V
, V = 0V
±500
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
= 30mA, V = V
GE
4.5
-
6.0
7.5
2.3
V
V
GE(th)
C
CE
= 30A
,
o
V
= 15V
C
GE
1.75
T
= 25 C
C
V
Collector to Emitter Saturation Voltage
CE(sat)
I
T
= 30A
,
V
= 15V,
= 15V,
C
GE
-
-
1.85
1.9
-
-
V
V
o
= 125 C
C
I
= 30A, V
GE
C
o
T
= 175 C
C
o
I = 30A
,
,
T
T
= 25 C
-
-
1.7
2.1
2.2
-
V
V
F
C
C
V
Diode Forward Voltage
FM
o
I = 30A
= 175 C
F
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
3345
75
-
-
-
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
60
Switching Characcteristics
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
39
360
620
160
1.3
-
ns
ns
d(on)
-
r
Turn-Off Delay Time
Fall Time
-
ns
d(off)
f
V
R
= 600V, I = 30A,
CC C
= 10Ω, V = 15V,
G
GE
210
ns
o
Resistive Load, T = 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
-
mJ
mJ
mJ
ns
on
off
1.22
2.52
38
1.6
-
-
-
-
-
-
-
-
-
-
-
ts
t
t
t
t
d(on)
r
375
635
270
1.59
1.78
3.37
78
ns
Turn-Off Delay Time
Fall Time
ns
d(off)
f
V
R
= 600V, I = 30A,
CC C
= 10Ω, V = 15V,
G
GE
ns
o
Resistive Load, T = 175 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
mJ
mJ
mJ
nC
nC
nC
on
off
ts
Q
Q
Q
g
V
V
= 600V, I = 30A,
= 15V
CE
GE
C
4.2
ge
gc
33.3
2
www.fairchildsemi.com
FGH30S130P Rev. C1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
200
o
o
20V
15V
20V
T
= 175 C
T
= 25 C
C
C
15V
V
GE
= 17V
12V
V
GE
= 17V
160
120
80
160
120
80
12V
10V
9V
10V
9V
8V
7V
8V
7V
40
40
0
0
0
2
4
6
8
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteritics
Figure 4. Transfer Characteristics
200
200
Common Emitter
Common Emitter
V
= 20V
o
V
T
T
= 15V
o
CE
GE
160
120
80
40
0
160
120
80
40
0
T
= 25 C
= 25 C
C
C
C
o
o
T
C
= 175 C
= 175 C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
12
8
60A
30A
60A
30A
IC = 15A
4
IC = 15A
8
0
25
50
75
100
125
150
175
4
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
3
www.fairchildsemi.com
FGH30S130P Rev. C1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
10000
20
Common Emitter
C
TC = 175oC
ies
16
1000
12
C
oes
8
30A
100
C
res
Common Emitter
4
0
60A
V
= 0V, f = 1MHz
o
GE
T
= 25 C
C
IC = 15A
10
30
1
10
Collector-Emitter Voltage, VCE [V]
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
15
Common Emitter
100
TC = 25oC
400V
600V
12
9
10µs
10
100µs
1ms
10 ms
VCC = 200V
DC
1
6
*Notes:
1. TC = 25oC
0.1
3
2. TJ = 175oC
3. Single Pulse
0.01
0
0.1
1
10
100
1000
0
50 100 150 200 250 300 350
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-On Characteristics vs
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
10000
500
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
t
r
TC = 175oC
td(off)
100
1000
Common Emitter
V
I
= 600V, V = 15V
GE
CC
= 30A
t
C
d(on)
tf
o
T
C
= 25 C
o
T
C
= 175 C
20
100
0
10
20
30
40
50
[Ω]
60
70
10
20
30
40
50
60
70
Gate Resistance, RG
Gate Resistance, RG [Ω]
4
www.fairchildsemi.com
FGH30S130P Rev. C1
Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS.
Collector Current
Figure 14.Turn-off Characteristics VS.
Collector Current
2500
2500
Common Emitter
Common Emitter
V
= 15V, R = 10Ω
G
V
= 15V, R = 10
Ω
GE
GE
G
1000
100
10
o
o
T
= 25 C
T
= 25 C
t
C
C
r
o
o
1000
T
= 175 C
T
= 175 C
C
C
t
d(off)
t
f
t
d(on)
100
20
40
Collector Current, IC [A]
60
20
40
60
Collector Current, IC [A]
Figure 15. Switching Loss VS. Gate Resistance
Figure 16. Switching Loss VS. Collector Current
10
30k
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
V
T
T
= 15V, R = 10Ω
GE
G
o
10k
IC = 30A
= 25 C
C
C
TC = 25oC
TC = 175oC
o
= 175 C
1k
E
Eoff
}
on
E
off
{
{
1
E
on
{
100
0.5
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
[Ω]
70
80
Collector Current, IC [A]
Gate Resistance, RG
Figure 17. Turn off Switching SOA Characteristics
Figure 18. Forward Characteristics
80
100
TJ = 25oC
10
10
TJ = 175oC
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 175oC
1
TC = 175oC
1
1
0.5
10
100
1000
0
1
2
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
5
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FGH30S130P Rev. C1
Figure 19. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
0.01
t1
t2
DutyFactor, D = t1/t2
Peak Tj = Pdmx Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
6
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FGH30S130P Rev. C1
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
7
www.fairchildsemi.com
FGH30S130P Rev. C1
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
8
FGH30S130P Rev. C1
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