FGH30N120FTDTU [FAIRCHILD]
Field stop trench technology; 场站的沟槽技术
| 型号： | FGH30N120FTDTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Field stop trench technology |
| 文件： | 总9页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2008
FGH30N120FTD
tm
1200V, 30A Trench IGBT
Features
General Description
•
•
•
•
•
Field stop trench technology
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
High speed switching
Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A
High input impedance
RoHS compliant
Applications
•
Induction heating and Microwave oven
•
Soft switching applications
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
1200
± 25
60
Units
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
@ TC = 25oC
@ TC = 100oC
IC
Collector Current
30
@ TC = 25oC
ICM (1)
IF
Pulsed Collector Current
90
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
30
A
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
339
W
W
oC
oC
PD
132
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.38
1.2
Units
oC/W
oC/W
oC/W
-
-
-
40
©2008 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH30N120FTD
FGH30N120FTDTU
TO-247
-
-
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
1200
-
-
-
-
1
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
mA
nA
IGES
±250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
IC = 30A, VGE = 15V,
3.5
-
6
7.5
2
V
V
1.6
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.0
-
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
5140
150
95
-
-
-
pF
pF
pF
V
CE = 30V VGE = 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
31
101
198
259
0.54
1.16
1.70
40
-
ns
ns
Rise Time
-
Turn-Off Delay Time
Fall Time
-
ns
VCC = 600V, IC = 30A,
R
G = 10Ω, VGE = 15V,
-
ns
Resistive Load, TC = 25oC
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
-
mJ
mJ
mJ
ns
1.51
-
-
-
-
-
-
-
-
-
-
-
td(on)
tr
td(off)
tf
127
211
364
0.74
1.63
2.37
208
41
ns
Turn-Off Delay Time
Fall Time
ns
VCC = 600V, IC = 30A,
G = 10Ω, VGE = 15V,
Resistive Load, TC = 125oC
R
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
mJ
mJ
mJ
nC
nC
nC
Qg
V
V
CE = 600V, IC = 30A,
GE = 15V
Qge
Qgc
97
2
www.fairchildsemi.com
FGH30N120FTD Rev. A
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.3
Max Units
T
T
T
C = 25oC
C = 125oC
C = 25oC
-
-
-
-
-
-
-
-
1.7
VFM
Diode Forward Voltage
IF = 30A
V
1.3
-
730
775
43
-
trr
Diode Reverse Recovery Time
ns
TC = 125oC
C = 25oC
TC = 125oC
-
IF =30A,
di/dt = 200A/µs
T
-
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
A
47
-
T
T
C = 25oC
C = 125oC
5.9
-
Qrr
µC
18.2
-
3
www.fairchildsemi.com
FGH30N120FTD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
180
TC = 25oC
20V
TC = 125oC
20V
150
150
15V
17V
17V
15V
120
90
60
30
0
120
12V
90
60
30
0
12V
10V
10V
9V
9V
VGE = 8V
VGE = 8V
0
2
4
6
8
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
100
100
TC = 125oC
80
80
60
40
20
0
60
40
20
0
0
2
4
6
0
5
10
15
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
12
8
60A
30A
60A
4
IC = 10A
30A
IC = 15A
0
25
50
75
100
125
0
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGH30N120FTD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
20
8000
Common Emitter
TC = 125oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
16
12
8
6000
4000
2000
0
Coes
60A
12
4
30A
Cres
IC = 15A
0
0
4
8
16
20
1
10
30
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
15
200
100
Common Emitter
TC = 25oC
10µs
12
100µs
1ms
600V
VCC = 200V
10
400V
10 ms
9
DC
1
0.1
6
3
0
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0
50
100
150
200
250
1
10
100
1000 3000
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Gate Resistance
500
2000
1000
td(off)
100
tr
tf
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
VCC = 600V, VGE = 15V
td(on)
IC = 30A
IC = 30A
100
50
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
5
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FGH30N120FTD Rev. A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 14. Turn-off Characteristics vs.
Collector Current
Collector Current
1000
1200
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VGE = 15V, RG = 10Ω
1000
TC = 25oC
TC = 25oC
TC = 125oC
TC = 125oC
tr
tf
100
td(on)
10
td(off)
100
10
10
20
30
40
50
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
10
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Eoff
Eoff
1
1
Eon
Common Emitter
VCC = 600V, VGE = 15V
Eon
IC = 30A
TC = 25oC
TC = 125oC
0.1
10
0.1
20
30
40
50
0
20
40
60
80
100
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
100
10
TJ = 125oC
10
TJ = 25oC
1
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 125oC
TC = 125oC
0.1
0.0
1
0.5
1.0
1.5
2000
1000
1
10
100
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
6
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FGH30N120FTD Rev. A
Typical Performance Characteristics
Figure 19. Reverse Current
Figure 20. Stored Charge
20
50
18
16
200A/µs
40
200A/µs
14
di/dt = 100A/µs
12
10
8
30
di/dt = 100A/µs
6
10
20
10
20
30
40
20
30
40
Forward Current, IF [A]
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
1000
di/dt = 100A/µs
800
200A/µs
600
400
10
20
30
40
Forward Current, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
PDM
t1
t2
7
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FGH30N120FTD Rev. A
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
www.fairchildsemi.com
8
FGH30N120FTD Rev. A
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I36
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FGH30N120FTD Rev. A
9
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