FGH30S130P [ONSEMI]
IGBT,1300V,30A,短路阳极;型号: | FGH30S130P |
厂家: | ONSEMI |
描述: | IGBT,1300V,30A,短路阳极 局域网 栅 双极性晶体管 功率控制 |
文件: | 总10页 (文件大小:538K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2015 年 3 月
FGH30S130P
1300 V, 30 A 阳极短路 IGBT
特性
概述
•
•
•
•
高速开关
Fairchild阳极短路IGBT采用先进的场截止沟槽和阳极短路技术,
可以为软开关应用提供卓越的导通和开关性能。该器件可并联配
置,具有极佳的雪崩能力。该器件为感应加热和微波炉而设计。
低饱和电压:VCE(sat) = 1.75 V @ IC = 30 A
高输入阻抗
符合 RoHS 标准
应用
•
感应加热,微波炉
C
E
C
G
G
COLLECTOR
(FLANGE)
E
绝对最大额定值 TC = 25°C 除非另有说明
符号 描述
额定值
1300
±25
单位
VCES
VGES
V
V
A
A
集电极 - 发射极之间电压
栅极-发射极间电压
集电极电流
@ TC = 25°C
@ TC = 100°C
60
IC
30
集电极电流
ICM (1)
集电极脉冲电流
90
60
A
A
IF
IF
二极管正向连续电流
@ TC = 25°C
30
A
二极管正向连续电流
最大功耗
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
500
250
W
W
°C
°C
°C
PD
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度,距离外壳 1/8",持续 5 秒
热性能
符号
RθJC(IGBT)
RθJA
参数
结至外壳热阻最大值
典型值
最大值
0.3
单位
°C/W
°C/W
--
--
40
结至环境热阻最大值
注:
1: 受限于最大结温
©2012 飞兆半导体公司
1
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FGH30S130P Rev. C5
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGH30S130P
FGH30S130P
TO-247
-
-
30
IGBT 电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
ICES
VCE = 1300, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
1
mA
nA
集电极切断电流
IGES
±500
G-E 漏电流
导通特性
VGE(th)
IC = 30 mA, VCE = VGE
4.5
-
6.0
7.5
2.3
V
V
G-E 阈值电压
IC = 30 A, VGE = 15 V
TC = 25°C
1.75
VCE(sat)
集电极-发射极间饱和电压
IC = 30 A, VGE = 15 V,
-
-
1.85
1.9
-
-
V
V
T
C = 125°C
I
C = 30 A, VGE = 15 V,
TC = 175°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 175°C
-
-
1.7
2.1
2.2
-
V
V
VFM
二极管正向电压
动态特性
Cies
-
-
-
3345
75
-
-
-
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
60
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
39
360
620
160
1.3
-
ns
ns
导通延迟时间
上升时间
-
td(off)
tf
-
ns
关断延迟时间
下降时间
VCC = 600 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
感性负载,TC = 25°C
210
ns
Eon
Eoff
Ets
-
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
1.22
2.52
38
1.6
-
-
-
-
-
-
-
-
-
-
-
td(on)
tr
td(off)
tf
导通延迟时间
上升时间
375
635
270
1.59
1.78
3.37
372.3
18.7
156.2
ns
ns
关断延迟时间
下降时间
VCC = 600 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
感性负载, TC =175°C
ns
Eon
Eoff
Ets
mJ
mJ
mJ
nC
nC
nC
导通开关损耗
关断开关损耗
总开关损耗
Qg
总栅极电荷
VCE = 600 V, IC = 30 A,
VGE = 15 V
Qge
Qgc
栅极-发射极间电荷
栅极-集电极间电荷
©2012 飞兆半导体公司
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FGH30S130P Rev. C5
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
200
200
20V 15V
12V
TC = 175oC
TC = 25oC
15V
20V
12V
160
160
VGE = 17V
VGE = 17V
10V
9V
120
80
40
0
120
80
40
0
10V
9V
8V
7V
8V
7V
0.0
2.0
4.0
6.0
8.0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压
图 4. 传输特性
200
200
Common Emitter
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
VCE = 20V
TC = 25oC
TC = 175oC
160
120
80
160
120
80
40
0
40
0
0.0
3.0
6.0
9.0
12.0
15.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Gate-Emitter Voltage,VGE [V]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与可变电流强度下
图 6. 饱和电压与 VGE 的关系壳温的关系
3.5
20
Common Emitter
Common Emitter
TC = 25oC
VGE = 15V
3.0
16
12
8
60A
2.5
30A
2.0
60A
IC = 15A
30A
1.5
4
IC = 15A
1.0
25
0
50
75
100
125
150
175
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2012 飞兆半导体公司
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FGH30S130P Rev. C5
典型性能特征
图 7. 饱和电压与 VGE 的关系
图 8. 电容特性
20
10000
Common Emitter
o
C
ies
T
= 175 C
C
16
12
1000
100
C
8
oes
30A
C
res
60A
Common Emitter
4
V
= 0V, f = 1MHz
o
GE
I
C
= 15A
T
= 25 C
C
0
10
30
4
8
12
16
20
1
10
Collector-Emitter Voltage, VCE [V]
20
Gate-Emitter Voltage, VGE [V]
图 9. 栅极电荷特性
图 10. SOA 特性
15
Common Emitter
TC = 25oC
100
400V
600V
12
10s
10
100s
1ms
10 ms
DC
VCC = 200V
9
6
3
0
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
0.1
3. Single Pulse
0.01
0
50 100 150 200 250 300 350
Gate Charge, Qg [nC]
0.1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
图 11. 导通特性与栅极电阻的关系
图 12. 关断特性与栅极电阻的关系
10000
500
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
t
r
TC = 25oC
TC = 175oC
td(off)
100
1000
Common Emitter
V
= 600V, V = 15V
GE
CC
I
= 30A
t
C
d(on)
tf
o
T
= 25 C
C
o
T
C
= 175 C
20
100
0
10
20
30
40
50
60
70
10
20
30
40
50
60
70
Gate Resistance, RG []
Gate Resistance, RG []
©2012 飞兆半导体公司
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FGH30S130P Rev. C5
典型性能特征
图 13. 导通特性与集电极电流的关系
图 14. 关断特性与集电极电流的关系
2500
2500
Common Emitter
Common Emitter
V
= 15V, R = 10
V
= 15V, R = 10
GE
G
GE
G
1000
100
10
o
o
T
= 25 C
T
= 25 C
t
C
C
r
o
o
1000
T
= 175 C
T
= 175 C
C
C
t
d(off)
t
f
t
d(on)
100
20
40
60
20
40
60
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 开关损耗与栅极电阻的关系
图 16. 开关损耗与集电极电流的关系
10
30k
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
V
T
T
= 15V, R = 10
GE
G
o
10k
IC = 30A
= 25 C
C
C
TC = 25oC
TC = 175oC
o
= 175 C
1k
E
Eoff
}
on
E
off
{
{
1
E
on
{
100
0.5
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
Collector Current, IC [A]
Gate Resistance, RG []
图 17. 关断开关 SOA 特性
图 18. 正向特性
80
100
TJ = 25oC
10
10
TJ = 175oC
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 175oC
1
TC = 175oC
1
1
0.5
0
10
100
1000
1
2
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
©2012 飞兆半导体公司
5
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FGH30S130P Rev. C5
图 19. IGBT 的瞬态热阻抗
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
0.01
1E-3
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2012 飞兆半导体公司
6
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FGH30S130P Rev. C5
机械尺寸
图 20. TO-247,模塑, 3 引脚, JEDEC 变量 AB
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期,如有疑问,请联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件,尤其是其
中涉及飞兆半导体产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
尺寸单位为毫米
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FGH30S130P Rev. C5
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