FGH30S150P [ONSEMI]
IGBT，1500v，30A，阳极短路;
| 型号： | FGH30S150P |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1500v，30A，阳极短路 局域网 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Shorted-anode
1500 V, 30 A
FGH30S150P
Description
Using advanced field stop trench and shorted−anode technology,
ON Semiconductor’s shorted−anode trench IGBTs offer superior
conduction and switching performances for soft switching
applications. The device can operate in parallel configuration with
exceptional avalanche capability. This device is designed for induction
heating and microwave oven.
www.onsemi.com
C
Features
• High Speed Switching
G
• Low Saturation Voltage: V
• High Input Impedance
=1.85 V @ I = 30 A
C
CE(sat)
E
E
• This Device is Pb−Free and is RoHS Compliant
C
G
Applications
• Induction Heating, Microwave Oven
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH30S
150P
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH30S150P = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
February, 2020 − Rev. 2
FGH30S150P/D
FGH30S150P
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Description
Collector to Emitter Voltage
Symbol
Rating
Unit
V
V
CES
GES
1500
Gate to Emitter Voltage
V
25
V
Collector Current
T
T
= 25°C
I
C
60
A
C
Collector Current
= 100°C
30
A
C
Pulsed Collector Current
I
(Note 1)
90
60
A
CM
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 100°C
I
F
A
30
A
P
D
500
W
W
°C
°C
°C
250
T
J
−55 to +175
−55 to +175
300
T
stg
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Limited by Tjmax.
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ
−
Max
0.3
40
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
R
(IGBT)
JC
ꢀ
R
−
ꢀ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH30S150P
FGH30S150P
TO−247
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 1 mA
1500
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢁ
B
V
/ꢁ T
= 0 V, I = 1 mA
−
1.5
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= 1500, V = 0 V
−
−
−
−
1
mA
nA
CES
CE
GE
I
= V
, V = 0 V
CE
500
GES
GE
GES
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
I
I
I
= 30 mA, V = V
GE
4.5
−
6.0
7.5
2.4
−
V
V
V
V
V
V
GE(th)
C
C
C
C
CE
Collector to Emitter Saturation Voltage
Diode Forward Voltage
V
= 30 A, V = 15 V, T = 25°C
1.85
2.06
2.15
1.61
1.96
CE(sat)
GE
C
= 30 A, V = 15 V, T = 125°C
−
GE
C
= 30 A, V = 15 V, T = 175°C
−
−
GE
C
V
I = 30 A, T = 25°C
F
−
2.2
−
FM
C
I = 30 A, T = 175°C
F
−
C
www.onsemi.com
2
FGH30S150P
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
3310
70
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
55
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 600 V, I = 30 A,
−
−
−
−
−
−
32
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 10 ꢂ ꢃ V = 15 V,
GE
Rise Time
t
r
292
492
214
1.16
0.9
Resistive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
mJ
mJ
mJ
ns
E
ts
2.06
36
t
t
V
= 600 V, I = 30 A,
−
−
−
−
−
−
−
−
−
−
d(on)
CC
C
R
= 10 ꢂ ꢃ V = 15 V,
G
GE
t
r
336
560
520
1.39
1.86
3.25
369
23.5
199
ns
Resistive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
= 600 V, I = 30 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS
200
160
120
80
200
20 V
17 V
12 V
T
= 25°C
T
C
= 175°C
15 V
C
20 V
15 V
V
= 17 V
GE
160
120
12 V
80
10 V
9 V
10 V
9 V
8 V
7 V
40
40
0
8 V
7 V
0
6
8
4
8
0
2
4
6
2
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
200
200
Common Emitter
V
= 20 V
CE
160
120
80
40
0
160
120
80
40
0
T
C
T
C
= 25°C
= 175°C
Common Emitter
V
= 15 V
GE
T
T
= 25°C
C
C
= 175°C
8
2
4
6
0
0
3
6
9
12
15
18
Collector−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
CE
GE
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
4
3
2
1
20
16
12
8
Common Emitter
GE
Common Emitter
C
V
= 15 V
T
= 25°C
60 A
30 A
30 A
60 A
12
I
C
= 15 A
I
C
= 15 A
4
0
150
175
25
50
75
100
125
8
20
4
16
Collector −Emitter Case Temperature, T [°C]
Gate−Emitter Voltage, V [V]
C
GE
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
www.onsemi.com
4
FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
16
12
8
10000
Common Emitter
C
T
= 175°C
C
ies
1000
100
10
30 A
C
oes
60 A
C
Common Emitter
res
4
I
C
= 15 A
V
= 0 V, f = 1 MHz
GE
C
T
= 25°C
0
12
16
20
5
10
15
20
25
30
8
4
Collector−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
CE
GE
Figure 8. Capacitance Characteristic
Figure 7. Saturation Voltage vs. VGE
15
200
100
Common Emitter
C
T
= 25°C
400 V
DC
50 ꢄ s
12
9
100 ꢄ s
V
CC
= 200 V
1 ms
10
1
600 V
10 ms
6
*Notes:
0.1
0.01
1.T = 25°C
3
C
1. T = 175°C
J
3. Single Pulse
0
1
10
100
1000 3000
0
80
160
240
320
400
Collector−Emitter Voltage, V [V]
CE
Gate Charge, Q [nC]
g
Figure 10. SOA Characteristics
Figure 9. Gate Charge Characteristics
1000
10000
Common Emitter
t
r
V
= 600 V, V = 15 V
CC GE
I
= 30 A
C
t
T
C
T
C
= 25°C
d(off)
= 175°C
1000
100
100
t
d(on)
t
f
Common Emitter
= 600 V, V = 15 V
V
C
CC
GE
I
= 30 A
T
C
T
C
= 25°C
= 175°C
10
20
30
40
50
60
70
10
70
Gate Resistance, R [ꢂ]
10
20
30
40
50
G
60
G
Gate Resistance, R [ꢂ]
Figure 12. Turn−Off Characteristics vs. Gate
Figure 11. Turn−On Characteristics vs. Gate
Resistance
Resistance
www.onsemi.com
5
FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
4000
1000
1000
Common Emitter
V
T
= 15 V, R = 10 ꢂ
GE
G
t
f
= 25°C
C
C
T
= 175°C
t
r
t
d(off)
100
10
t
d(on)
Common Emitter
100
50
V
= 15 V, R = 10 ꢂ
GE
G
T
T
= 25°C
C
C
= 175°C
60
10
20
30
40
50
60
20
30
40
50
10
Collector Current, I [A]
Collector Current, I [A]
C
C
Figure 14. Turn−Off Characteristics
Figure 13. Turn−On Characteristics
vs. Collector Current
vs. Collector Current
10
5
1
Common Emitter
V
= 600 V, V = 15 V
CC
GE
I
= 30 A
C
E
on
T
C
T
C
= 25°C
= 175°C
E
off
E
on
E
off
Common Emitter
1
V
= 15 V, R = 10 ꢂ
GE
G
T
T
= 25°C
C
C
= 175°C
0.5
10
0.05
60
30
40
50
20
40
50
60
10
20
30
Gate Resistance, R [ꢂ]
G
Collector Current, I [A]
C
Figure 15. Switching Loss vs. Gate
Resistance
Figure 16. Switching Loss vs. Collector
Current
100
10
1
60
T = 25°C
J
T = 175°C
J
10
Safe Operating Area
1
T = 25°C
J
V
= 15 V, T = 175°C
GE
C
T = 175°C
J
0.5
10
100
1000
1
2
3
1
0
Forward Voltage, V [V]
F
Collector−Emitter Voltage, V [V]
CE
Figure 18. Forward Characteristics
Figure 17. Turn−Off Switching SOA
Characteristics
www.onsemi.com
6
FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0.4
0.5
0.1
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Duty Factor, D = t1/t2
Single Pulse
0.01
7E−3
Peak T = Pdm x Zꢀ jc + T
j
C
10
0.01
Rectangular Pulse Duration [sec]
1
1E−3
0.1
1E−5
1E−4
Figure 19. Transient Thermal Impedance of IGBT
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FGH40N60SMD
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明