FGH40N60SFTU [ONSEMI]
IGBT，600V，40A，2.3V，TO-247 高速场截止;
| 型号： | FGH40N60SFTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，40A，2.3V，TO-247 高速场截止 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 40 A
FGH40N60SF
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching
losses are essential.
www.onsemi.com
C
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
= 2.3 V @ I = 40 A
C
CE(sat)
G
• Fast Switching: E
= 8 ꢀ J/A
OFF
E
E
• This Device is Pb−Free and is RoHS Compliant
Applications
C
G
• Solar Inverter, UPS, Welder, PFC
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N60
SF
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40N60SF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
February, 2020 − Rev. 2
FGH40N60SF/D
FGH40N60SF
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Description
Collector to Emitter Voltage
Symbol
Ratings
Unit
V
V
CES
V
GES
600
Gate to Emitter Voltage
20
V
Transient Gate−to−Emitter Voltage
30
80
Collector Current
T
C
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
I
A
A
C
Collector Current
40
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
I
(Note 1)
120
A
CM
P
290
W
W
°C
°C
°C
D
116
T
−55 to +150
−55 to +150
300
J
T
stg
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Typ
−
Max
0.43
40
Unit
°C/W
°C/W
R
(IGBT)
ꢁ
JC
R
−
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Packing Method
Reel Size
N/A
Tape Width
Quantity
FGH40N60SFTU
FGH40N60SF
TO−247
Tube
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 250 ꢀ A
600
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/ꢂ T
= 0 V, I = 250 ꢀ A
−
0.6
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢀ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 250 ꢀ A, V = V
GE
4.0
−
5.0
2.3
2.5
6.5
2.9
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V, T = 125°C
−
GE
C
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2
FGH40N60SF
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
2110
200
60
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
25
42
−
−
−
54
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 10 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
115
27
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1.13
0.31
1.44
24
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
d(on)
CC
C
R
= 10 ꢃ ꢄ V = 15 V,
G
GE
t
r
43
ns
Inductive Load, T = 125°C
C
Turn−Off Delay Time
Fall Time
120
30
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
1.14
0.48
1.62
120
14
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
= 400 V, I = 40 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
58
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS
120
100
80
60
40
20
0
120
T
C
= 25°C
T
C
= 125°C
20 V
15 V
12 V
20 V
15 V
100
80
60
40
20
0
12 V
10 V
10 V
V
GE
= 8 V
V
GE
= 8 V
1.5
3.0
4.5
6.0
0.0
0.0
1.5
3.0
4.5
6.0
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
120
80
Common Emitter
Common Emitter
V
= 15 V
GE
V
= 20 V
CE
T
T
= 25°C
C
C
T
C
T
C
= 25°C
= 125°C
60
40
20
0
= 125°C
80
40
0
6
10
12
13
0
1
2
3
4
8
Collector−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
CE
GE
Figure 4. Transfer Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
16
12
8
Common Emitter
C
Common Emitter
GE
T = −40°C
V
= 15 V
80 A
40 A
80 A
40 A
12
I
= 20 A
C
4
I
C
= 20 A
8
0
125
25
50
75
100
16
20
4
Case Temperature, T [°C]
Gate−Emitter Voltage, V [V]
C
GE
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
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4
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
20
16
12
8
Common Emitter
= 125°C
Common Emitter
C
T
C
T
= 25°C
16
12
8
40 A
80 A
80 A
40 A
= 20 A
4
4
0
I
= 20 A
C
I
C
0
20
12
16
4
8
12
Gate−Emitter Voltage, V [V]
20
4
8
16
GE
Gate−Emitter Voltage, V [V]
GE
Figure 8. Saturation Voltage vs. VGE
Figure 7. Saturation Voltage vs. VGE
15
12
9
5000
4000
3000
2000
1000
0
Common Emitter
Common Emitter
C
V
T
= 0 V, f = 1 MHz
T = 25°C
GE
C
= 25°C
C
iss
200 V
V
CC
= 100 V
300 V
C
oss
6
C
3
rss
0
30
150
0.1
1
10
0
50
100
Gate Charge, Q [nC]
Collector−Emitter Voltage, V [V]
g
CE
Figure 10. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
400
100
200
10 ꢀ s
100
100 ꢀ s
1 ms
10
1
t
r
10 ms
DC
Single Nonrepetitive
Common Emitter
V = 400 V, V = 15 V
CC
Pulse T = 25°C
C
GE
t
0.1
0.01
d(on)
Curves must be derated
linearly with increase
in temperature.
I
= 40 A
C
T
C
T
C
= 25°C
= 125°C
10
100
1000
10
50
1
20
30
40
0
10
Gate Resistance, R [ꢃ]
G
Collector−Emitter Voltage, V [V]
CE
Figure 12. Turn−On Characteristics
Figure 11. SOA Characteristics
vs. Gate Resistance
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5
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
500
5500
1000
Common Emitter
Common Emitter
V
I
= 400 V, V = 15 V
V
T
= 15 V, R = 10 ꢃ
CC
GE
GE
C
C
G
= 40 A
= 25°C
C
T
C
T
C
= 25°C
T
= 125°C
= 125°C
t
r
t
d(off)
100
100
10
t
d(on)
t
f
10
10
50
80
80
10
20
30
40
0
60
Collector Current, I [A]
80
20
40
Gate Resistance, R [ꢃ]
G
C
Figure 14. Turn−On Characteristics
Figure 13. Turn−Off Characteristics
vs. Collector Current
vs. Gate Resistance
500
100
Common Emitter
Common Emitter
V
= 15 V, R = 10 ꢃ
GE
G
V
C
= 400 V, V = 15 V
CC
GE
T
C
T
C
= 25°C
= 125°C
I
= 40 A
T
C
T
C
= 25°C
= 125°C
t
d(off)
E
on
t
f
1
E
off
10
0.2
40
60
20
0
10
20
30
40
50
Gate Resistance, R [ꢃ]
Collector Current, I [A]
G
C
Figure 16. Switching Loss
vs. Gate Resistance
Figure 15. Turn−Off Characteristics
vs. Collector Current
30
10
Common Emitter
V
T
T
= 15 V, R = 10 ꢃ
GE
C
C
G
= 25°C
= 125°C
E
E
on
off
1
0.1
20
30
40
50
60
70
Frequency [kHz]
Collector Current, I [A]
C
Figure 17. Switching Loss vs. Collector Current
Figure 18. Load Current vs. Frequency
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6
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
100
10
Safe Operating Area
V
GE
= 15 V, T = 125°C
C
1
1
1000
10
100
Collector−Emitter Voltage, V [V]
CE
Figure 19. Turn−Off Switching SOA Characteristics
1
0.1
0.5
0.2
0.1
0.05
0.02
P
DM
0.01
0.01
t1
Single Pulse
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢁ jc + T
j
C
1E−3
1
1E−3
0.01
0.1
1E−5
1E−4
Rectangular Pulse Duration [sec]
Figure 20. Transient Thermal Impedance of IGBT
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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rights of others.
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相关型号：
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT PACKAGE-3
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